公开(公告)号：US06815962B2

公开(公告)日：2004-11-09

申请号：US10216836

申请日：2002-08-13

申请人： Takayuki Hirano ,  Yasuji Yoneda ,  Hiroshi Gotoh ,  Eiji Iwamura ,  Susumu Takeuchi

发明人： Takayuki Hirano ,  Yasuji Yoneda ,  Hiroshi Gotoh ,  Eiji Iwamura ,  Susumu Takeuchi

IPC分类号： G01R3104

CPC分类号： G01R1/07307

摘要： There is provided an electric connection-inspection device which does not impair a freedom of selection of using materials from a viewpoint of restriction in terms of product's function with the aptitude of electric features of electric resistance and physical properties of internal stress, and restriction in terms of manufacture as to the appropriation or not of employment of a plating method, and which has a fine construction provided with the excellent durability that an electrode element is hard to adhere and coagulate. An electric connection-inspection device for coming into electrically contact with an object to be inspected to input and output a signal, comprising a plurality of contact terminals, a coating of a second layer having the Young's modulus higher than that of a wiring base-material layer and whose specific resistance is not more than 1×10−4 &OHgr;cm being formed on the surface of the wiring base-material layer positioned at the extreme end of the contact terminal, and a coating of a third layer having a low coagulating property being formed on the surface of the second layer.

公开(公告)号：USRE44239E1

公开(公告)日：2013-05-28

申请号：US11430299

申请日：2006-05-09

申请人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

发明人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

IPC分类号： C23C14/34

CPC分类号： H01L21/2855 ,  H01L23/53219 ,  H01L2924/0002 ,  Y10T428/12736 ,  H01L2924/00

摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400° C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 μΩcm is obtained. The target is made of an Al alloy containing the above elements.

摘要翻译： 公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。 用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素 来自稀土元素，总量为0.05〜15原子％。 制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并且通过在150-400℃的退火温度下退火Al合金膜，将溶解在Al基体中的所有元素的一部分沉淀为金属间化合物; 由此获得由电阻率小于20μOmegacm的Al合金膜制成的半导体器件用电极。 目标由含有上述元素的Al合金制成。

公开(公告)号：US5514909A

公开(公告)日：1996-05-07

申请号：US281028

申请日：1994-07-27

申请人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

发明人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

IPC分类号： C23C14/34 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L23/544

CPC分类号： H01L21/2855 ,  H01L23/53219 ,  H01L2924/0002 ,  Y10T428/12736

摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150.degree. to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.

摘要翻译： 公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。 用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素 来自稀土元素，总量为0.05〜15原子％。 制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并将溶解在Al基体中的所有元素的一部分析出为金属间化合物，退火温度为150〜400℃退火Al合金膜。 由此获得由电阻率小于20微米欧米伽厘米的Al合金膜制成的半导体器件用电极。 目标由含有上述元素的Al合金制成。

公开(公告)号：US20120291922A1

公开(公告)日：2012-11-22

申请号：US13514076

申请日：2010-12-06

申请人： Eiji Iwamura ,  Kazushi Gotoh ,  Fumio Ishiga ,  Takayasu Yoshioka ,  Masayoshi Utsuno ,  Atsuo Nakamura ,  Teruo Okochi ,  Masaki Sanji ,  Takuji Sukekawa ,  Kenshi Ikedo ,  Yoshiyuki Andoh ,  Takeshi Shirai ,  Kimiaki Mori ,  Rie Wada ,  Kensuke Nakanishi ,  Masami Aihara ,  Seishi Kumamoto

发明人： Eiji Iwamura ,  Kazushi Gotoh ,  Fumio Ishiga ,  Takayasu Yoshioka ,  Masayoshi Utsuno ,  Atsuo Nakamura ,  Teruo Okochi ,  Masaki Sanji ,  Takuji Sukekawa ,  Kenshi Ikedo ,  Yoshiyuki Andoh ,  Takeshi Shirai ,  Kimiaki Mori ,  Rie Wada ,  Kensuke Nakanishi ,  Masami Aihara ,  Seishi Kumamoto

IPC分类号： B23K35/363

CPC分类号： B23K35/3613 ,  B23K35/362 ,  C22C12/00 ,  C22C13/00 ,  H05K3/3484

摘要： A solder paste according to an aspect of the invention includes, within a flux, an activator that has a dibasic acid with a molecular weight of 250 or less, a monobasic acid with a molecular weight of 150 or greater and 300 or less, and a dibasic acid with a molecular weight of 300 or greater and 600 or less; and at least one resin additive selected from the group consisting of high-density polyethylenes and polypropylenes. The solder paste has the resin additive in an amount of 4% by weight or greater and 12% by weight or less when the total amount of the flux is taken as 100% by weight, and has a viscosity of 400 Pa·s or greater at 80° C.

摘要翻译： 根据本发明的一个方面的焊膏在助焊剂中包括具有分子量为250或更小的二元酸，分子量为150以上且300以下的一元酸的活化剂，以及 分子量为300以上且600以下的二元酸; 和至少一种选自高密度聚乙烯和聚丙烯的树脂添加剂。 当焊剂的总量为100重量％时，焊膏的树脂添加量为4重量％以上，12重量％以下，粘度为400Pa·s以上 在80℃

公开(公告)号：US06716540B2

公开(公告)日：2004-04-06

申请号：US10087736

申请日：2002-03-05

申请人： Toshimitsu Kohara ,  Koichiro Akari ,  Eiji Iwamura

发明人： Toshimitsu Kohara ,  Koichiro Akari ,  Eiji Iwamura

IPC分类号： B32B1504

CPC分类号： C23C14/027 ,  C23C14/025 ,  C23C14/0605 ,  Y10T428/12458 ,  Y10T428/12472 ,  Y10T428/12625 ,  Y10T428/12736 ,  Y10T428/12757 ,  Y10T428/12764 ,  Y10T428/12847 ,  Y10T428/12951 ,  Y10T428/24983 ,  Y10T428/26 ,  Y10T428/30 ,  Y10T428/31678

摘要： A multilayer film formed body comprises an outermost layer comprising a diamondlike carbon film, a substrate comprising an iron material, and an intermediate layer comprising a first layer on the substrate side, and a second layer on the outermost layer side. The first layer comprises at least either metal of Cr and Al, and a second layer comprises an amorphous layer including carbon and at least either metal of Cr and Al. The second layer has a gradient structure where the metal decreases as the position becomes closer to the outermost layer. The hardness of the second layer increases stepwise or continuously as the position becomes closer to the outermost layer. The hardness of the second layer close to the first layer is close to the hardness of the first layer. The hardness of the second layer close to the outermost layer is close to the hardness of the outermost layer.

摘要翻译： 多层膜成形体包括包含菱形碳膜的最外层，包含铁材料的基材，以及包含在基板侧上的第一层的中间层和最外层侧的第二层。 第一层包括Cr和Al的至少一种金属，第二层包括包含碳和Cr和Al的至少一种金属的非晶层。 第二层具有梯度结构，其中金属随着位置变得更接近最外层而减小。 随着位置变得更靠近最外层，第二层的硬度逐步或连续地增加。 靠近第一层的第二层的硬度接近于第一层的硬度。 靠近最外层的第二层的硬度接近最外层的硬度。

公开(公告)号：US06333267B1

公开(公告)日：2001-12-25

申请号：US08400861

申请日：1995-03-08

申请人： Takashi Onishi ,  Eiji Iwamura ,  Seigo Yamamoto ,  Katsutoshi Takagi ,  Kazuo Yoshikawa

发明人： Takashi Onishi ,  Eiji Iwamura ,  Seigo Yamamoto ,  Katsutoshi Takagi ,  Kazuo Yoshikawa

IPC分类号： H01L21285

CPC分类号： H01L21/28008 ,  C23C14/165 ,  G02F1/136286 ,  G02F2001/136295

摘要： An active matrix type liquid crystal display, in which the reliability is enhanced by preventing the short-circuit and insulation breakdown of a gate insulating portion and the delay time of a gate bus line is shortened by reducing the resistivity of an interconnect film. The liquid crystal display of this type is manufactured by the steps of forming an interconnect/electrode film on a substrate by physical deposition; patterning the interconnect/electrode film; and anodic-oxidizing part or all of the interconnect/electrode film. In this method, the interconnect/electrode film is formed of an Al alloy containing at least one kind selected from a group consisting Fe, Co and rare earth elements in an amount of 0.1 to 10 at %; and the thickness of the anodic oxidation film is specified to be in the range of 200 Å or more.

摘要翻译： 通过降低互连膜的电阻率，缩短了通过防止栅绝缘部分的短路和绝缘击穿以及栅极总线延迟时间来提高可靠性的有源矩阵型液晶显示器。 这种液晶显示器通过以下步骤制造：通过物理沉积在衬底上形成互连/电极膜; 图案化互连/电极膜; 和阳极氧化部分或全部的互连/电极膜。 在该方法中，互连电极膜由含有0.1〜10原子％的Fe，Co和稀土元素中的至少一种的Al合金形成， 阳极氧化膜的厚度规定在200以上的范围内。

公开(公告)号：US6033542A

公开(公告)日：2000-03-07

申请号：US574693

申请日：1995-12-19

申请人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

发明人： Seigo Yamamoto ,  Katsutoshi Takagi ,  Eiji Iwamura ,  Kazuo Yoshikawa ,  Takashi Oonishi

IPC分类号： C23C14/34 ,  H01L21/285 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532

CPC分类号： H01L21/2855 ,  H01L23/53219 ,  H01L2924/0002 ,  Y10T428/12736

摘要： Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %. The method of fabricating an electrode for semiconductor devices, includes the steps of: depositing an Al alloy film, in which the elements mentioned above are dissolved in an Al matrix, on a substrate; and precipitating part of all of the elements dissolved in the Al matrix as intermetallic compounds by annealing the Al alloy film at an annealing temperature ranging from 150 to 400.degree. C.; whereby an electrode for semiconductor devices which is made of an Al alloy film with an electrical resistivity lower than 20 .mu..OMEGA.cm is obtained. The target is made of an Al alloy containing the above elements.

摘要翻译： 公开了一种能够抑制小丘的产生和降低电阻率的半导体器件用电极，其适用于使用薄膜晶体管的有源矩阵液晶显示器等; 其制作方法; 以及用于形成半导体器件用电极膜的溅射靶。 用于半导体器件的电极由含有一种或多种选自Fe，Co，Ni，Ru，Rh和Ir的合金元素的Al合金制成，总量为0.1至10原子％，或选择一种或多种合金元素 来自稀土元素，总量为0.05〜15原子％。 制造半导体器件的电极的方法包括以下步骤：在基底上沉积上述元素溶解在Al基体中的Al合金膜; 并通过在150-400℃的退火温度下退火Al合金膜，将溶解在Al基体中的所有元素的一部分沉淀为金属间化合物。 由此获得由电阻率小于20微米欧米伽厘米的Al合金膜制成的半导体器件用电极。 目标由含有上述元素的Al合金制成。

公开(公告)号：US20130276937A1

公开(公告)日：2013-10-24

申请号：US13989917

申请日：2011-12-16

申请人： Natsuki Kubo ,  Eiji Iwamura

发明人： Natsuki Kubo ,  Eiji Iwamura

IPC分类号： B23K35/02 ,  B23K35/362

CPC分类号： B23K35/025 ,  B23K35/26 ,  B23K35/262 ,  B23K35/3615 ,  B23K35/362 ,  C22C1/0483 ,  C22C9/00 ,  C22C13/00

摘要： A principal object of the present invention is to provide a flux which can be used to produce a lead-free solder paste which is excellent in viscosity stability and exhibits excellent wettability at the time of soldering even in atmospheric air. The flux is a lead-free solder flux having a bromine atom concentration of 400 to 20000 ppm based on 0.1 g of the flux and comprising 0.01 to 0.7% by weight of an amine compound (a) represented by the general formula (1): H2N—(CH2)n—X—(CH2)n—NH2 (wherein n represents an integer of 1 to 6 and X represents —NH—CH2CH2—NH— or a piperazine residue).

摘要翻译： 本发明的主要目的是提供可用于生产粘度稳定性优异且在大气中甚至在焊接时具有优异润湿性的无铅焊膏的焊剂。 焊剂是基于0.1g焊剂的溴原子浓度为400〜20000ppm的无铅焊剂，含有0.01〜0.7重量％的通式（1）表示的胺化合物（a）： H2N-（CH2）nX-（CH2）n-NH2（其中n表示1〜6的整数，X表示-NH-CH2CH2-NH-或哌嗪残基）。

公开(公告)号：US08178471B2

公开(公告)日：2012-05-15

申请号：US10538470

申请日：2004-01-22

申请人： Eiji Iwamura

发明人： Eiji Iwamura

IPC分类号： C01B31/08 ,  C23C14/00

CPC分类号： C01B3/001 ,  B82Y30/00 ,  C01B3/0021 ,  C01B3/0026 ,  C01B3/0078 ,  C01B6/02 ,  C23C14/06 ,  Y02E60/325 ,  Y02E60/327 ,  Y02P20/129

摘要： There are provided hydrogen storage materials comprising a first region composed primarily of an amorphous carbon containing at least one metal element selected from the group consisting of Ti, Zr, Hf and Y, and a second region composed primarily of an amorphous carbon having a density lower than that of the first region.

摘要翻译： 提供了包含主要由含有选自Ti，Zr，Hf和Y中的至少一种金属元素的无定形碳组成的第一区域的第一区域，以及主要由密度较低的无定形碳构成的第二区域 比第一个地区。

公开(公告)号：US06599492B2

公开(公告)日：2003-07-29

申请号：US09818594

申请日：2001-03-28

申请人： Eiji Iwamura ,  Takashi Kinoshita

发明人： Eiji Iwamura ,  Takashi Kinoshita

IPC分类号： C01B3102

CPC分类号： C23C14/0605 ,  B82Y30/00 ,  C30B23/02 ,  C30B29/02 ,  Y10S977/755 ,  Y10T428/263

摘要： An onion-like carbon thin film is provided which contains carbon as a main component, has a film thickness of at least 20 nm or more, and has clusters of an onion-like structure. Specifically, there is provided the onion-like carbon thin film satisfying the foregoing requirements, and in which (1) at least 20 or more clusters each having a diameter of 4 nm or more, and having an onion-like structure are contained per 0.001 &mgr;m2; or (2) the proportion of clusters each having an onion-like structure in a matrix is at least 50% by volume or more. The onion-like carbon thin film of the present invention is very useful in terms of availability in various industrial fields as a hard protective film or a solid lubricating film of the surface in various machine parts, electronic parts, and the like, or as a field electron emission material, or the like, an electronic part of a field emission display, or the like.