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公开(公告)号：US08427864B2
公开(公告)日：2013-04-23
申请号：US13375751
申请日：2010-06-02
申请人： Takayuki Kawahara , Kiyoo Itoh , Riichiro Takemura , Kenchi Ito
发明人： Takayuki Kawahara , Kiyoo Itoh , Riichiro Takemura , Kenchi Ito
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/228
摘要： To write information on a memory cell of SPRAM formed of an MOS transistor and a tunnel magnetoresistive element, the memory cell is supplied with a current in a direction opposite to a direction of a current required for writing the information on the memory cell, and then, the memory cell is supplied with a current required for writing. In this manner, even when the same information is sequentially written on the memory cell, since the currents in the two directions are caused to flow in pairs in the tunnel magnetoresistive element of the memory cell each time information is rewritten, deterioration of a film that forms the tunnel magnetoresistive element can be suppressed. Therefore, reliability of the SPRAM can be improved.
摘要翻译： 为了在由MOS晶体管和隧道磁阻元件形成的SPRAM的存储单元上写入信息，向存储单元提供与在存储单元上写入信息所需的电流方向相反的方向的电流，然后 ，为存储单元提供写入所需的电流。 以这种方式，即使当相同的信息被顺序地写入存储单元时，由于每当信息被重写时，两个方向上的电流成对地在存储单元的隧道磁阻元件中成对流动，所以， 可以抑制隧道磁阻元件的形成。 因此，可以提高SPRAM的可靠性。
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公开(公告)号：US20120081952A1
公开(公告)日：2012-04-05
申请号：US13375751
申请日：2010-06-02
申请人： Takayuki Kawahara , Kiyoo Itoh , Riichiro Takemura , Kenchi Ito
发明人： Takayuki Kawahara , Kiyoo Itoh , Riichiro Takemura , Kenchi Ito
IPC分类号： G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/228
摘要： To write information on a memory cell of SPRAM formed of an MOS transistor and a tunnel magnetoresistive element, the memory cell is supplied with a current in a direction opposite to a direction of a current required for writing the information on the memory cell, and then, the memory cell is supplied with a current required for writing. In this manner, even when the same information is sequentially written on the memory cell, since the currents in the two directions are caused to flow in pairs in the tunnel magnetoresistive element of the memory cell each time information is rewritten, deterioration of a film that forms the tunnel magnetoresistive element can be suppressed. Therefore, reliability of the SPRAM can be improved.
摘要翻译： 为了在由MOS晶体管和隧道磁阻元件形成的SPRAM的存储单元上写入信息，向存储单元提供与在存储单元上写入信息所需的电流方向相反的方向的电流，然后 ，为存储单元提供写入所需的电流。 以这种方式，即使当相同的信息被顺序地写入存储单元时，由于每当信息被重写时，两个方向上的电流成对地在存储单元的隧道磁阻元件中成对流动，所以， 可以抑制隧道磁阻元件的形成。 因此，可以提高SPRAM的可靠性。
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3.发明申请公开(公告)号：US20130044537A1
公开(公告)日：2013-02-21
申请号：US13522076
申请日：2011-01-13
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/5607 , H01L29/82 , H01L43/08 , H01L43/12
摘要： There is provided a magnetic memory with using a magnetoresistive effect element of a spin-injection magnetization reversal type, in which a multi-value operation is possible and whose manufacturing and operation are simple. A preferred aim of this is solved by providing two or more magnetoresistive effect elements which are electrically connected in series to each other and by selecting one of the series-connected elements depending on a direction of a current carried in the series-connected elements, a magnitude thereof, and an order of the current thereof for performing the writing operation. For example, it is solved by differentiating plane area sizes of the respective magnetoresistive effect elements which have the same film structure from each other so as to differentiate resistance change amounts caused by respective magnetization reversal and threshold current values required for respective magnetization reversal from each other.
摘要翻译： 提供了一种使用自旋注入磁化反转型的磁阻效应元件的磁存储器，其中多值操作是可能的，其制造和操作简单。 优选的目的是通过提供两个或更多个彼此串联电连接的磁阻效应元件来解决，并且根据串联元件中承载的电流的方向选择串联元件之一， 其大小及其电流的顺序用于执行写入操作。 例如，通过将具有相同膜结构的各个磁阻效应元件的平面面积尺寸相互分离来解决，以便区分由相应的磁化反转引起的电阻变化量和相应磁化反转所需的阈值电流值 。
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公开(公告)号：US20090310400A1
公开(公告)日：2009-12-17
申请号：US12545379
申请日：2009-08-21
IPC分类号： G11C11/02
CPC分类号： G11C11/16 , G11C8/08 , G11C11/1675 , H01L27/228
摘要： In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction.
摘要翻译： 在使用自旋转移转矩切换的MRAM中，实现了具有小存储单元的充分的写入操作，并且在读取干扰被抑制的同时增加读取电流。 在隧道磁阻元件的自由层位于位线一侧的情况下，使用PMOS晶体管，并且在隧道磁阻元件的固定层位于 使用NMOS晶体管的位线执行源极接地操作中的反并联写入。 通过执行反并行写入方向的读取操作来提高读取和写入操作余量。
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公开(公告)号：US07787290B2
公开(公告)日：2010-08-31
申请号：US12545379
申请日：2009-08-21
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C8/08 , G11C11/1675 , H01L27/228
摘要： In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction.
摘要翻译： 在使用自旋转移转矩切换的MRAM中，实现了具有小存储单元的充分的写入操作，并且在读取干扰被抑制的同时增加读取电流。 在隧道磁阻元件的自由层位于位线一侧的情况下，使用PMOS晶体管，并且在隧道磁阻元件的固定层位于 使用NMOS晶体管的位线执行源极接地操作中的反并联写入。 通过执行反并行写入方向的读取操作来提高读取和写入操作余量。
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公开(公告)号：US07443718B2
公开(公告)日：2008-10-28
申请号：US11606187
申请日：2006-11-30
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) having a ferromagnetic free layer, and exhibits a first, relatively high resistance state, and a second, relatively low resistance state. To write to the magnetic memory device a current IMTJ is driven through the MTJ. For a first duration, the current is equal to a DC threshold current, being the DC current required to switch the multilayer structure between the first state and the second state. This induces a C-like domain structure in the free layer. For a second duration, the current IMTJ is larger than the DC threshold current. This causes the MTJ to switch states. The current requited to cause switching is less than that required using a uniform current pulse.
摘要翻译： 磁存储器件包括具有铁磁性自由层的磁性隧道结（MTJ），并且呈现出第一相对高电阻状态和第二较低电阻状态。 为了写入磁存储器件，通过MTJ驱动电流I MTJ 。 对于第一持续时间，电流等于DC阈值电流，即在第一状态和第二状态之间切换多层结构所需的DC电流。 这在自由层中引起C样结构域结构。 在第二持续时间内，当前的电流电流大于直流阈值电流。 这导致MTJ切换状态。 导致切换的电流小于使用均匀电流脉冲所需的电流。
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公开(公告)号：US20080037179A1
公开(公告)日：2008-02-14
申请号：US11638379
申请日：2006-12-14
申请人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
发明人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
IPC分类号： G11B5/33
CPC分类号： G11C11/16 , Y10S977/935
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.
摘要翻译： 磁存储器件包括通过隔离晶体管连接到感测线的位线的磁性隧道结（MTJ）。 MTJ包括具有磁性硬轴的铁磁层。 辅助电流线覆盖位线并与位线绝缘。 MTJ可以在第一相对高电阻状态和第二相对低电阻状态之间切换。 辅助电流线沿铁磁层中的磁性硬轴施加磁场，独立于通过MTJ的电流流动来辅助MTJ在第一和第二状态之间切换。
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公开(公告)号：US20070285974A1
公开(公告)日：2007-12-13
申请号：US11736088
申请日：2007-04-17
IPC分类号： G11C11/02
CPC分类号： G11C11/16 , G11C8/08 , G11C11/1675 , H01L27/228
摘要： In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction.
摘要翻译： 在使用自旋转移转矩切换的MRAM中，实现了具有小存储单元的充分的写入操作，并且在读取干扰被抑制的同时增加读取电流。 在隧道磁阻元件的自由层位于位线一侧的情况下，使用PMOS晶体管，并且在隧道磁阻元件的固定层位于 使用NMOS晶体管的位线执行源极接地操作中的反并联写入。 通过执行反并行写入方向的读取操作来提高读取和写入操作余量。
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9.发明授权公开(公告)号：US09257483B2
公开(公告)日：2016-02-09
申请号：US13522076
申请日：2011-01-13
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/5607 , H01L29/82 , H01L43/08 , H01L43/12
摘要： There is provided a magnetic memory with using a magnetoresistive effect element of a spin-injection magnetization reversal type, in which a multi-value operation is possible and whose manufacturing and operation are simple. A preferred aim of this is solved by providing two or more magnetoresistive effect elements which are electrically connected in series to each other and by selecting one of the series-connected elements depending on a direction of a current carried in the series-connected elements, a magnitude thereof, and an order of the current thereof for performing the writing operation. For example, it is solved by differentiating plane area sizes of the respective magnetoresistive effect elements which have the same film structure from each other so as to differentiate resistance change amounts caused by respective magnetization reversal and threshold current values required for respective magnetization reversal from each other.
摘要翻译： 提供了一种使用自旋注入磁化反转型的磁阻效应元件的磁存储器，其中多值操作是可能的，其制造和操作简单。 优选的目的是通过提供两个或更多个彼此串联电连接的磁阻效应元件来解决，并且根据串联连接的元件中承载的电流的方向选择串联元件之一， 其大小及其电流的顺序用于执行写入操作。 例如，通过将具有相同膜结构的各个磁阻效应元件的平面面积尺寸相互分离来解决，以便区分由相应的磁化反转引起的电阻变化量和相应磁化反转所需的阈值电流值 。
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公开(公告)号：US07738286B2
公开(公告)日：2010-06-15
申请号：US11638379
申请日：2006-12-14
申请人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
发明人： Kenchi Ito , Hiromasa Takahashi , Takayuki Kawahara , Riichiro Takemura , Thibault Devolder , Paul Crozat , Joo-von Kim , Claude Chappert
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/935
摘要： A magnetic memory device comprises a magnetic tunnel junction (MTJ) connecting to a bit line to a sense line through an isolation transistor. The MTJ includes a ferromagnetic layer having a magnetic hard axis. An assist current line overlies the bit line and is insulated from the bit line. The MTJ is switchable between a first, relatively high resistance state and a second, relatively low resistance state. The assist current line applies a magnetic field along the magnetic hard axis in the ferromagnetic layer, independently of current flow through the MTJ for assisting switching of the MTJ between the first and second states.
摘要翻译： 磁存储器件包括通过隔离晶体管连接到感测线的位线的磁性隧道结（MTJ）。 MTJ包括具有磁性硬轴的铁磁层。 辅助电流线覆盖位线并与位线绝缘。 MTJ可以在第一相对高电阻状态和第二相对低电阻状态之间切换。 辅助电流线沿铁磁层中的磁性硬轴施加磁场，独立于通过MTJ的电流流动来辅助MTJ在第一和第二状态之间切换。
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