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公开(公告)号：US07071496B2
公开(公告)日：2006-07-04
申请号：US10700290
申请日：2003-11-03
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , H01L31/022466 , H01L31/022483 , H01L31/032 , H01L31/0323 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： An electronic device including a new oxide layer and a method for manufacturing the same are provided. The electronic device of the present invention includes an oxide layer, which is formed of an oxide containing an element from group IIa, an element from group IIb and an element from group IIIb. For example, it can be applied to a solar cell including a back electrode serving as a first electrode layer, a transparent electrically conductive film serving as a second electrode layer having a light-transmitting property, and a semiconductor layer that is provided between the back electrode and the transparent electrically conductive film and functions as a light-absorption layer, and including an oxide layer provided between the semiconductor layer and the transparent electrically conductive film.
摘要翻译： 提供了包括新的氧化物层的电子器件及其制造方法。 本发明的电子器件包括由含有IIa族元素，IIb族元素和IIIb族元素的氧化物形成的氧化物层。 例如，可以适用于具有作为第一电极层的背面电极的太阳能电池，作为具有透光性的第二电极层的透明导电膜，以及设置在背面的半导体层 电极和透明导电膜并用作光吸收层，并且包括设置在半导体层和透明导电膜之间的氧化物层。
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公开(公告)号：US07479596B2
公开(公告)日：2009-01-20
申请号：US10799043
申请日：2004-03-11
IPC分类号： H01L31/072 , H01L31/00
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： It is an object of the present invention to provide a solar cell, and a method for manufacturing the same, that includes a layer having Zn, Mg, and O, and with which an increase in efficiency can be achieved. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and a layer A disposed between the second electrode layer and the p-type semiconductor layer, the layer A includes Zn, Mg, O, and at least one element M selected from Ca, Sr, Ba, Al, In, and Ga, and photoelectromotive force is generated due to light that is incident from the second electrode layer side.
摘要翻译： 本发明的目的是提供一种太阳能电池及其制造方法，其包括具有Zn，Mg和O的层，并且能够实现效率的提高。 太阳能电池包括第一电极层，第二电极层，设置在第一电极层和第二电极层之间的p型半导体层，以及设置在第二电极层和p型半导体层之间的层A， 层A包括Zn，Mg，O以及选自Ca，Sr，Ba，Al，In和Ga中的至少一种元素M，并且由于从第二电极层侧入射的光产生光电动势。
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3.发明授权Semiconductor thin film, method for manufacturing the same, and solar cell using the same 有权半导体薄膜及其制造方法以及使用其的太阳能电池
公开(公告)号：US6107562A
公开(公告)日：2000-08-22
申请号：US271782
申请日：1999-03-18
IPC分类号： H01L31/0264 , H01L31/0328 , H01L31/0392 , H01L31/04 , H01L31/042 , H01L31/0749 , H01L31/18 , H01L31/06
CPC分类号： H01L31/0749 , H01L31/0322 , H01L31/0328 , Y02E10/541 , Y10T428/12528
摘要： A semiconductor thin film comprises an n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II. A solar cell using this semiconductor thin film comprises a substrate and a rear electrode, a p-type compound semiconductor layer, an n-type compound semiconductor layer, an n-type semiconductor layer, a window layer, and a transparent conductive film, formed in this order on the substrate. The n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II has a high carrier density.
摘要翻译： 半导体薄膜包括由Ib，IIIb，VIb和II族组成的至少一种元素的n型化合物半导体层。 使用这种半导体薄膜的太阳能电池包括基板和后电极，p型化合物半导体层，n型化合物半导体层，n型半导体层，窗口层和透明导电膜，形成 按顺序在基板上。 包含Ib，IIIb，VIb和II族中的至少一种元素的n型化合物半导体层具有高载流子密度。
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4.发明申请公开(公告)号：US20060261383A1
公开(公告)日：2006-11-23
申请号：US10560801
申请日：2004-11-30
IPC分类号： H01L29/80
CPC分类号： H01L31/02966 , H01L31/0322 , H01L31/0749 , H01L31/1832 , Y02E10/541 , Y02P70/521
摘要： A compound semiconductor film is formed with a compound containing: A. at least one element selected from zinc, tin, cadmium, indium, and gallium; B. at least one element selected from oxygen and sulfur; and C. an element of Group IIa. A solar cell is configured to include: a substrate (11); a conductive layer (12) formed on the substrate (11); a light-absorption layer (13) that is formed on the conductive layer (12) with a compound semiconductor containing an element of Group Ib, an element of Group IIIa, and an element of Group VIa; the above-described compound semiconductor film (14) formed on the light-absorption layer (13); and a transparent conductive layer (16) formed on the compound semiconductor film (14). Such a configuration provides a compound semiconductor film having a low electric resistivity. Further by employing the compound semiconductor film having a low electric resistivity as a buffer layer of a solar cell, the energy conversion efficiency of the solar cell is improved.
摘要翻译： 化合物半导体膜由含有：A，选自锌，锡，镉，铟和镓中的至少一种元素的化合物形成; B.选自氧和硫中的至少一种元素; 和C.组IIa的一个要素。 太阳能电池被配置为包括：基板（11）; 形成在所述基板（11）上的导电层（12）; 在导电层（12）上形成有含有Ib族元素，IIIa族元素和VIa族元素的化合物半导体的光吸收层（13）; 形成在光吸收层（13）上的上述化合物半导体膜（14）。 和形成在化合物半导体膜（14）上的透明导电层（16）。 这种结构提供具有低电阻率的化合物半导体膜。 此外，通过采用具有低电阻率的化合物半导体膜作为太阳能电池的缓冲层，能够提高太阳能电池的能量转换效率。
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5.发明申请Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell 审中-公开半导体膜，半导体膜的制造方法，使用该半导体膜的太阳能电池及太阳能电池的制造方法公开(公告)号：US20050056863A1
公开(公告)日：2005-03-17
申请号：US10942682
申请日：2004-09-15
IPC分类号： G02B15/14 , H01L29/732 , H01L31/00 , H01L31/0264 , H01L31/0288 , H01L31/032 , H01L31/0328 , H01L31/0336 , H01L31/042 , H01L31/072 , H01L31/109 , H01L31/18
CPC分类号： H01L31/0323 , Y02E10/541 , Y02P70/521
摘要： A semiconductor film has a composition in which a Group Ia element and a Group Vb element are added to a compound semiconductor with a chalcopyrite structure containing a Group Ib element, a Group IIIb element and a Group VIb element. This allows the provision of a semiconductor film whose carrier density can be controlled effectively. A solar cell of the present invention includes: a substrate and the semiconductor film of the present invention that is provided as a light-absorption layer on the substrate. With this configuration, a light-absorption layer whose carrier density can be controlled effectively can be provided, so that a solar cell having a high energy conversion efficiency can be provided.
摘要翻译： 半导体膜具有将Ia族元素和Vb族元素添加到具有含有Ib族元素，IIIb族元素和VIb族元素的黄铜矿结构的化合物半导体中的组成。 这允许提供可以有效地控制其载流子密度的半导体膜。 本发明的太阳能电池包括：基板和在基板上设置为光吸收层的本发明的半导体膜。 利用这种结构，能够有效地控制载流子密度的光吸收层，能够提供具有高能量转换效率的太阳能电池。
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公开(公告)号：US06534704B2
公开(公告)日：2003-03-18
申请号：US09972123
申请日：2001-10-05
IPC分类号： H01L31072
CPC分类号： H01L31/0749 , H01L31/032 , H01L31/1836 , Y02E10/541
摘要： A solar cell includes a first semiconductor layer that is p-type, and a second semiconductor layer that is n-type formed over the first semiconductor layer. The solar cell includes a layer A made of a semiconductor different from the first semiconductor layer and the second semiconductor layer or an insulator between the first semiconductor layer and the second semiconductor layer. The band gap Eg1 of the first semiconductor layer and the band gap Eg2 of the second semiconductor layer satisfy the relationship Eg1
摘要翻译： 太阳能电池包括p型的第一半导体层和在第一半导体层上形成为n型的第二半导体层。 太阳能电池包括由不同于第一半导体层和第二半导体层的半导体或第一半导体层和第二半导体层之间的绝缘体制成的层A。 第一半导体层的带隙Eg1和第二半导体层的带隙Eg2满足关系Eg1
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公开(公告)号：US20060220059A1
公开(公告)日：2006-10-05
申请号：US10552126
申请日：2004-04-09
IPC分类号： H01L31/00 , H01L29/732
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A solar cell including a light-absorption layer of a compound semiconductor with a chalcopyrite crystal structure and having excellent characteristics such as conversion efficiency is provided. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer interposed between the first electrode layer and the second electrode layer, and an n-type semiconductor layer interposed between the p-type semiconductor layer and the second electrode layer. The p-type semiconductor layer includes a compound semiconductor containing a group Ib element, a group IIIb element and a group VI element and having a chalcopyrite structure. The bandgap of the p-type semiconductor layer increases from the n-type semiconductor layer side to the first electrode layer side monotonically. The bandgap of the p-type semiconductor layer on the main surface at the n-type semiconductor layer side is at least 1.08 eV, and the bandgap of the p-type semiconductor layer on the main surface at the first electrode layer side is at least 1.17 eV. In the p-type semiconductor layer, a first region at the n-type semiconductor layer side and a second region at the first electrode layer side are different from each other in bandgap increase rate in a direction of thickness of the p-type semiconductor layer.
摘要翻译： 提供一种太阳能电池，其包括具有黄铜矿晶体结构的化合物半导体的光吸收层，并且具有优异的特性如转换效率。 太阳能电池包括第一电极层，第二电极层，介于第一电极层和第二电极层之间的p型半导体层，以及插入在p型半导体层和第二电极层之间的n型半导体层 电极层。 p型半导体层包括含有Ib族元素，IIIb族元素和VI族元素并具有黄铜矿结构的化合物半导体。 p型半导体层的带隙从n型半导体层侧单调增加到第一电极层侧。 n型半导体层侧的主面上的p型半导体层的带隙为1.08eV以上，第一电极层侧的主面上的p型半导体层的带隙为至少 1.17 eV 在p型半导体层中，在p型半导体层的厚度方向上的n型半导体层侧的第一区域和第一电极层侧的第二区域的带隙增加率彼此不同 。
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公开(公告)号：US06259016B1
公开(公告)日：2001-07-10
申请号：US09515143
申请日：2000-02-29
IPC分类号： H01L31072
CPC分类号： H01L31/0749 , H01L31/02168 , Y02E10/541
摘要： The present invention includes a substrate, a lower electrode film, a p-type semiconductor layer (a second semiconductor layer), an n-type semiconductor layer (a first semiconductor layer), an upper electrode film and an anti-reflection film, which are stacked sequentially on the substrate in this order, and an interconnection electrode formed on the upper electrode film. The first semiconductor layer is free from Cd, and the second semiconductor layer is a light-absorption layer. The band gap Eg1 of the first semiconductor layer and the band gap Eg2 of the second semiconductor layer satisfy a relationship: Eg1>Eg2. The electron affinity &khgr;1 (eV) of the first semiconductor layer and an electron affinity &khgr;2 (eV) of the second semiconductor layer satisfy a relationship: 0≦(&khgr;2−&khgr;1)
摘要翻译： 本发明包括基板，下电极膜，p型半导体层（第二半导体层），n型半导体层（第一半导体层），上电极膜和防反射膜，其中 依次层叠在基板上，形成在上部电极膜上的互连电极。 第一半导体层不含Cd，第二半导体层是光吸收层。 第一半导体层的带隙Eg1和第二半导体层的带隙Eg2满足关系：Eg1> Eg2。 第一半导体层的电子亲和力khgr 1（eV）和第二半导体层的电子亲和力khgr 2（eV）满足关系：0 <=（＆khgr; 2-＆khgr; 1）<0.5。
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公开(公告)号：US6023020A
公开(公告)日：2000-02-08
申请号：US950204
申请日：1997-10-14
IPC分类号： H01L31/032 , H01L31/0336
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode formed on the n-type semiconductor thin film. A material having a higher resistivity than the p-type chalcopyrite semiconductor is formed between the p-type chalcopyrite semiconductor thin film and the n-type semiconductor thin film. A thin film made of this material may be formed by deposition from a solution. For example, CuInS.sub.2 is formed on the surface of a p-type chalcopyrite based semiconductor such as CuInSe.sub.2 by contacting the surface of the semiconductor with a solution in which a salt containing group IIIb elements, an organic substance containing group VIb elements and acid are mixed.
摘要翻译： 提供了利用黄铜矿半导体并降低pn结的结界面上的缺陷密度的太阳能电池。 该太阳能电池包括基板，形成在基板上的背面电极，形成在背面电极上的p型黄铜矿半导体薄膜，形成为与p型黄铜矿形成pn结的n型半导体薄膜 半导体薄膜和形成在n型半导体薄膜上的透明电极。 在p型黄铜矿半导体薄膜和n型半导体薄膜之间形成具有比p型黄铜矿半导体更高的电阻率的材料。 由该材料制成的薄膜可以通过从溶液中沉积而形成。 例如，通过使半导体的表面与含有IIIb族元素的盐，含有VIb族元素的有机物质和酸混合的溶液与CuInSe 2的p型黄铜矿类半导体的表面形成CuInS 2， 。
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公开(公告)号：US06441301B1
公开(公告)日：2002-08-27
申请号：US09804521
申请日：2001-03-12
IPC分类号： H01L3106
CPC分类号： H01L31/0392 , H01L31/0322 , H01L31/03925 , H01L31/03926 , Y02E10/541 , Y02P70/521
摘要： A solar cell with good characteristics and high reliability is provided that includes a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb. A method of manufacturing the same also is provided. The solar cell includes a conductive base, a first insulating layer formed on one principal plane of the base, a second insulating layer formed on a second principal plane of the base, and a light-absorption layer disposed above the first insulating layer. The light-absorption layer is formed of a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb.
摘要翻译： 提供了具有良好特性和高可靠性的太阳能电池，其包括包含来自组Ib，IIIb和VIb中的每一个的至少一种元素的半导体。 还提供了一种制造该方法的方法。 太阳能电池包括导电基体，形成在基底的一个主平面上的第一绝缘层，形成在基底的第二主平面上的第二绝缘层和设置在第一绝缘层上方的光吸收层。 光吸收层由包含Ib，IIIb和VIb族中的至少一种元素的半导体形成。
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