摘要:
A solar cell with good characteristics and high reliability is provided that includes a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb. A method of manufacturing the same also is provided. The solar cell includes a conductive base, a first insulating layer formed on one principal plane of the base, a second insulating layer formed on a second principal plane of the base, and a light-absorption layer disposed above the first insulating layer. The light-absorption layer is formed of a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb.
摘要:
A solar cell includes a first semiconductor layer that is p-type, and a second semiconductor layer that is n-type formed over the first semiconductor layer. The solar cell includes a layer A made of a semiconductor different from the first semiconductor layer and the second semiconductor layer or an insulator between the first semiconductor layer and the second semiconductor layer. The band gap Eg1 of the first semiconductor layer and the band gap Eg2 of the second semiconductor layer satisfy the relationship Eg1
摘要:
A solar cell includes a conductive substrate, and an insulating layer, a conducting layer and a semiconductor layer that are disposed on the substrate. A through hole is formed so as to penetrate the insulating layer and the conducting layer, and the through hole is filled with a semiconductor that composes the semiconductor layer. At least one element selected from the elements composing the conductive substrate diffuses into the semiconductor with which the through hole is filled.
摘要:
A semiconductor thin film comprises an n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II. A solar cell using this semiconductor thin film comprises a substrate and a rear electrode, a p-type compound semiconductor layer, an n-type compound semiconductor layer, an n-type semiconductor layer, a window layer, and a transparent conductive film, formed in this order on the substrate. The n-type compound semiconductor layer including at least one element from each of groups Ib, IIIb, VIb and II has a high carrier density.
摘要:
The present invention includes a substrate, a lower electrode film, a p-type semiconductor layer (a second semiconductor layer), an n-type semiconductor layer (a first semiconductor layer), an upper electrode film and an anti-reflection film, which are stacked sequentially on the substrate in this order, and an interconnection electrode formed on the upper electrode film. The first semiconductor layer is free from Cd, and the second semiconductor layer is a light-absorption layer. The band gap Eg1 of the first semiconductor layer and the band gap Eg2 of the second semiconductor layer satisfy a relationship: Eg1>Eg2. The electron affinity &khgr;1 (eV) of the first semiconductor layer and an electron affinity &khgr;2 (eV) of the second semiconductor layer satisfy a relationship: 0≦(&khgr;2−&khgr;1)
摘要:
An electric double layer capacitor 200 is configured such that a positive electrode 206, a separator 205, and a negative electrode 207 stacked in this order are contained in a container, and a portion between the positive electrode 206 and the negative electrode 207 is filled with an electrolytic solution. A polar plate of one or each of the positive electrode 206 and the negative electrode 207 includes a current collector 201, 203 and a plurality of electrically-conductive fine fibers 202, 204 formed and standing on a surface of the current collector such that one end of each of the fine fibers is electrically connected to the surface of the current collector. A surface of the polar plate is covered with the separator 205, the surface corresponding to the surface of the current collector. The polar plate and the separator 205 are pressure bonded to be integrated with each other. In the electric double layer capacitor using the electrically-conductive fine fiber, such as a carbon nanotube, as an active material, energy density can be increased by densely compressing the active material.
摘要:
Provided are a substrate on which carbon nanotubes each having one end connected to the substrate can be formed at a high synthetic rate and from which the carbon nanotubes are less likely to be peeled off. The substrate is a substrate for forming the carbon nanotubes and includes a buffer layer 13 formed on at least one of surfaces of a substrate main body 14 and containing aluminum atoms and fluorine atoms. The carbon nanotube complex includes the substrate and a plurality of carbon nanotubes 11 each having one end connected to a surface of the buffer layer 13.
摘要:
An electric double layer capacitor 200 is configured such that a positive electrode 206, a separator 205, and a negative electrode 207 stacked in this order are contained in a container, and a portion between the positive electrode 206 and the negative electrode 207 is filled with an electrolytic solution. A polar plate of one or each of the positive electrode 206 and the negative electrode 207 includes a current collector 201, 203 and a plurality of electrically-conductive fine fibers 202, 204 formed and standing on a surface of the current collector such that one end of each of the fine fibers is electrically connected to the surface of the current collector. A surface of the polar plate is covered with the separator 205, the surface corresponding to the surface of the current collector. The polar plate and the separator 205 are pressure bonded to be integrated with each other. In the electric double layer capacitor using the electrically-conductive fine fiber, such as a carbon nanotube, as an active material, energy density can be increased by densely compressing the active material.
摘要:
The present invention provides a highly reliable energy storage device capable of preventing a reaction current from flowing in a carbon nanotube electrode by ionizing a catalyst metal or a substrate metal to cause the metal to flow out to an electrolytic solution. An energy storage device of the present invention includes: at least a pair of electrode bodies that are a cathode and an anode; and an electrolytic solution. At least one of the electrode bodies is configured such that a layer of carbon nanotubes is formed on an electric conductor. A coupling region where one ends of the carbon nanotubes are coupled to and electrically connected to the electric conductor and a non-coupling region where ends of the carbon nanotubes are not coupled to the electric conductor are formed on a surface of the electric conductor. The carbon nanotubes having one ends connected to the coupling region are toppled to cover a surface of the non-coupling region.
摘要:
The present invention provides a highly reliable energy storage device capable of preventing a reaction current from flowing in a carbon nanotube electrode by ionizing a catalyst metal or a substrate metal to cause the metal to flow out to an electrolytic solution. An energy storage device of the present invention includes: at least a pair of electrode bodies that are a cathode and an anode; and an electrolytic solution. At least one of the electrode bodies is configured such that a layer of carbon nanotubes is formed on an electric conductor. A coupling region where one ends of the carbon nanotubes are coupled to and electrically connected to the electric conductor and a non-coupling region where ends of the carbon nanotubes are not coupled to the electric conductor are formed on a surface of the electric conductor. The carbon nanotubes having one ends connected to the coupling region are toppled to cover a surface of the non-coupling region.