公开(公告)号：US6160623A

公开(公告)日：2000-12-12

申请号：US490475

申请日：2000-01-24

申请人： Takayuki Uchiyama ,  Seiji Matsuura

发明人： Takayuki Uchiyama ,  Seiji Matsuura

IPC分类号： H01L21/027 ,  G01M11/02 ,  G03F7/20 ,  G01B11/00

CPC分类号： G03F7/706

摘要： An aberration of a projection exposing apparatus system is measured from the difference between widths of both-end lines even in a fine pattern having a pattern line width of less than 0.2 .mu.m. A resist film on a substrate is exposed to light, using a mask having a line-and-space (LS) pattern. This exposure is repeated plural times at plural exposures, so as to obtain, at the respective exposures, the differences between the widths of the both-end lines of the line-and-space pattern. The difference between the widths of the both-end lines at a standard (optimal) exposure is estimated from the relationship between the differences between the widths of the both-end lines and the exposures, so as to obtain an aberration at the standard exposure.

摘要翻译： 投影曝光装置系统的像差即使在图案线宽度小于0.2μm的精细图案中也从两端宽度的差异测量。 使用具有线间距（LS）图案的掩模将基板上的抗蚀剂膜曝光。 这种曝光在多次曝光中重复多次，以便在相应的曝光下获得线间距图案的两端线宽度之间的差异。 根据两端宽度和曝光之间的差异之间的关系来估计标准（最佳）曝光下的两端线的宽度之间的差异，以便在标准曝光下获得像差。

公开(公告)号：US07295286B2

公开(公告)日：2007-11-13

申请号：US11439113

申请日：2006-05-24

申请人： Seiji Matsuura

发明人： Seiji Matsuura

IPC分类号： G03B27/72 ,  G03B27/54

CPC分类号： G03F7/701 ,  G03F7/70566

摘要： The exposure device includes a polarizing plate and an illumination diaphragm. The polarizing plate is located in an optical path between a light source and a photomask, serving as a polarizing unit that polarizes an illuminating light from the light source in the first and the second direction orthogonal to the optical axis. The illumination diaphragm is a so-called quadruple illumination diaphragm, which includes four openings. The first opening and the second opening are located on a straight line running parallel to a third direction perpendicular to the optical axis and passing the center point of the illumination diaphragm, across the center point from each other. Likewise, the third opening and the fourth opening are located on a straight line running parallel to a fourth direction perpendicular to the optical axis and passing the center point, across the center point from each other.

摘要翻译： 曝光装置包括偏光板和照明光圈。 偏光板位于光源和光掩模之间的光路中，用作偏振单元，其使来自与光轴正交的第一和第二方向上的来自光源的照明光偏振。 照明光阑是所谓的四重照明光阑，包括四个开口。 第一开口和第二开口位于平行于垂直于光轴的第三方向延伸的直线上，并且使照明光阑的中心点跨过中心点。 类似地，第三开口和第四开口位于平行于垂直于光轴的第四方向延伸的直线上并使中心点跨过中心点彼此。

公开(公告)号：US5663220A

公开(公告)日：1997-09-02

申请号：US902772

申请日：1992-06-23

申请人： Kunihiko Tokura ,  Masaru Uryu ,  Seiji Matsuura

发明人： Kunihiko Tokura ,  Masaru Uryu ,  Seiji Matsuura

IPC分类号： H04R7/02 ,  C08G59/02 ,  C08G59/12 ,  C08G59/42 ,  C08J5/04 ,  C08L63/00 ,  C08K7/14 ,  C08K7/02

CPC分类号： C08G59/42 ,  C08G59/02 ,  C08G59/12 ,  C08J5/04 ,  C08L63/00 ,  C08J2363/00

摘要： This invention provides an acoustic vibrational material containing various fibers as the reinforcement material and having the epoxy resin as the matrix resin, wherein the epoxy resin is modified by a polybutadiene base elastomer containing not less than 90 mole percent of 1,2-linked units. The epoxy resin modified with the above polybutadiene elastomer exhibits a maximum value of loss coefficient at the temperature region near the room temperature. This region is much higher than that of the conventional epoxy resin modified with polybutadiene elastomer mainly including 1,4-linked unit. Decrease in elastic modulus of the epoxy resin with increase of temperature is lesser in the epoxy resin of the present invention, whereas larger in the conventional one. Thus compatibility between large internal loss and high elastic modulus is achieved.

摘要翻译： 本发明提供一种包含各种纤维作为增强材料并具有环氧树脂作为基质树脂的声振动材料，其中环氧树脂由含有不少于90摩尔％的1,2-连接单元的聚丁二烯基弹性体改性。 用上述聚丁二烯弹性体改性的环氧树脂在室温附近的温度区域具有最大的损失系数值。 该区域比用主要包括1,4-连接单元的聚丁二烯弹性体改性的常规环氧树脂高得多。 本发明的环氧树脂中环氧树脂的弹性模量随着温度的升高而降低，而常规环氧树脂的弹性模量较小。 因此实现了大的内部损耗和高弹性模量之间的兼容性。

公开(公告)号：US6058807A

公开(公告)日：2000-05-09

申请号：US15664

申请日：1998-01-29

申请人： Yasuyoshi Fujii ,  Seiji Matsuura ,  Kazuhiro Kaneko

发明人： Yasuyoshi Fujii ,  Seiji Matsuura ,  Kazuhiro Kaneko

IPC分类号： B23B31/02 ,  B23B51/02 ,  B23P15/32 ,  B21K5/04

CPC分类号： B23B31/005 ,  B23B51/00 ,  B23B51/02 ,  B23P15/32 ,  B23B2231/0204 ,  B23B2240/28 ,  B23B2251/02 ,  B23B2251/426 ,  Y10T29/49833 ,  Y10T29/49945 ,  Y10T403/4949 ,  Y10T403/4966 ,  Y10T408/907

摘要： A method for producing cutting tools incorporated in the present invention is carried out as follows: a shank portion and a drill portion are formed separately such that the inner diameter of a hole made in the shank portion is slightly smaller than the outer diameter of the drill portion. The rear of the drill portion is forcibly inserted into the hole of the shank portion at normal temperature which is room temperature. The diameter of the inner wall of the hole is thereby enlarged, resulting in a tight fitting. After the insertion of the drill portion in the shank portion, the drill portion may be ground to form a drill edge. Before the insertion of the drill portion in the shank portion, the shank portion may be quenched under vacuum or the like, or the surface of the shank portion may be hardened by nitriding.

摘要翻译： 本发明的切削工具的制造方法如下进行：柄部和钻头部分分别形成，使得在柄部中形成的孔的内径略小于钻头的外径 一部分。 钻头部分的后部在室温的常温下被强制地插入到柄部分的孔中。 因此孔的内壁的直径变大，导致紧密配合。 在将钻头部分插入柄部之后，钻头部分可以被研磨以形成钻头边缘。 在将钻头部分插入柄部之前，柄部可以在真空等下淬火，或者可以通过氮化使柄部的表面硬化。

公开(公告)号：US6013395A

公开(公告)日：2000-01-11

申请号：US026962

申请日：1998-02-20

申请人： Seiji Matsuura

发明人： Seiji Matsuura

IPC分类号： G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/32

摘要： An exposure photomask which transfers a desired pattern onto a semiconductor substrate S, which has a step, has a region formed by a light-blocking film and a region formed by a translucent film. The ideal optical path difference between exposure light that passes through the translucent film and exposure light that passes through a completely transparent part and the ideal mask pattern size are determined based on the step in the semiconductor substrate, and on the desired pattern size, the pattern being formed in accordance with the ideal optical path difference and ideal mask pattern size. The thickness of the translucent film is established so that the optical path difference between exposure light that passes through the translucent film and the exposure light that passes through a completely transparent part is approximately equal to the step in the semiconductor substrate.

摘要翻译： 将期望的图案转印到具有台阶的半导体基板S上的曝光光掩模具有由遮光膜形成的区域和由半透明膜形成的区域。 基于半导体衬底中的步骤和期望的图案尺寸来确定通过透光膜的曝光光与通过完全透明部分的曝光之间的理想光程差和理想掩模图案尺寸， 根据理想的光程差和理想的掩模图案尺寸形成。 半透明膜的厚度被建立为使得通过透光膜的曝光光与通过完全透明部分的曝光光之间的光程差大致等于半导体衬底中的台阶。

公开(公告)号：US20070212617A1

公开(公告)日：2007-09-13

申请号：US11714819

申请日：2007-03-07

申请人： Seiji Matsuura

发明人： Seiji Matsuura

IPC分类号： G03F9/00 ,  G03C5/00 ,  G03F1/00

CPC分类号： G03F7/70441 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70433

摘要： A photomask is to be used for exposure of a semiconductor wafer with the dipole illumination light, and includes a main opening, a first assist opening, a second assist opening, a third assist opening and a fourth assist opening. Each of the assist openings is located so that the central point thereof is deviated from both of a first straight line parallel to a first direction and passing the central point of the main opening, and a second straight line parallel to a second direction and passing the central point of the main opening. Here, the first direction is the direction among in-plane directions of the photomask that is parallel to an alignment direction of an effective light source distribution of the dipole illumination light. Also, the second direction is the direction among in-plane directions of the photomask that is perpendicular to the alignment direction.

摘要翻译： 光掩模用于暴露具有偶极照明光的半导体晶片，并且包括主开口，第一辅助开口，第二辅助开口，第三辅助开口和第四辅助开口。 每个辅助开口的位置使得其中心点偏离平行于第一方向的第一直线并通过主开口的中心点，并且平行于第二方向的第二直线通过 主要开口的中心点。 这里，第一方向是平行于偶极照明光的有效光源分布的取向方向的光掩模的面内方向的方向。 此外，第二方向是光掩模的垂直于取向方向的面内方向之间的方向。

公开(公告)号：US20070002302A1

公开(公告)日：2007-01-04

申请号：US11439113

申请日：2006-05-24

申请人： Seiji Matsuura

发明人： Seiji Matsuura

IPC分类号： G03B27/72

CPC分类号： G03F7/701 ,  G03F7/70566

摘要： The exposure device includes a polarizing plate and an illumination diaphragm. The polarizing plate is located in an optical path between a light source and a photomask, serving as a polarizing unit that polarizes an illuminating light from the light source in the first and the second direction orthogonal to the optical axis. The illumination diaphragm is a so-called quadruple illumination diaphragm, which includes four openings. The first opening and the second opening are located on a straight line running parallel to a third direction perpendicular to the optical axis and passing the center point of the illumination diaphragm, across the center point from each other. Likewise, the third opening and the fourth opening are located on a straight line running parallel to a fourth direction perpendicular to the optical axis and passing the center point, across the center point from each other.

公开(公告)号：US06310684B1

公开(公告)日：2001-10-30

申请号：US09552306

申请日：2000-04-19

申请人： Seiji Matsuura

发明人： Seiji Matsuura

IPC分类号： G01B900

CPC分类号： G01M11/0264 ,  G03F7/706

摘要： There is provided a method of measuring spherical aberration in a projection system in which a mask pattern is projected in a reduced scale with a light having a wavelength of &lgr;, including the steps of (a) projecting a first mask pattern onto a photosensitive object in a reduced scale, the first mask pattern being defined by light-permeable portions and light-impermeable portions each sandwiched between the light-permeable portions, each of the light-permeable portions having a width equal to the wavelength &lgr;, (b) projecting a second mask pattern onto the photosensitive object in a reduced scale, the second mask pattern being defined by light-permeable portions and light-impermeable portions each sandwiched between the light-permeable portions. each of the light-permeable portions having a width equal to &lgr;/2, (c) exposing the photosensitive object to the light having a wavelength of &lgr;, and developing the photosensitive object, (d) measuring a first location of the photosensitive object at which a width of the light-impermeable portions of the first mask pattern is focused in a minimum, and a second location of the photosensitive object at which a width of the light-impermeable portions of the second mask pattern is focused in a minimum, and (e) measuring spherical aberration, based on the first and second locations. The method makes it possible to accurately measure spherical aberration in a projection system through the use of Levenson type mask patterns having different sizes.

摘要翻译： 提供了一种在投影系统中测量球面像差的方法，其中以具有波长为lamb的光以缩小的比例投影掩模图案，包括以下步骤：（a）将第一掩模图案投射到感光对象上 缩小比例，第一掩模图案由透光部分和透光部分夹持的不透光部分限定，每个透光部分具有等于波长长度的宽度，（b）将 第二掩模图案以缩小比例放置在感光物体上，第二掩模图案由透光部分和透光部分夹持的不透光部分限定。 每个透光部分具有等于lambd / 2的宽度，（c）将感光物体暴露于具有羔羊皮波长的光，并使感光物体显影，（d）测量感光物体的第一位置 第一掩模图案的不透光部分的宽度被最小化，并且第二掩模图案的不透光部分的宽度最小化的感光对象的第二位置，以及 （e）基于第一和第二位置测量球面像差。 该方法使得可以通过使用具有不同尺寸的Levenson型掩模图案来精确地测量投影系统中的球面像差。

公开(公告)号：US06084678A

公开(公告)日：2000-07-04

申请号：US129124

申请日：1998-08-04

申请人： Seiji Matsuura

发明人： Seiji Matsuura

IPC分类号： G03F9/00 ,  H01L21/027 ,  H01L23/544 ,  G01B11/00

CPC分类号： G03F9/70 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/5448 ,  H01L2924/0002

摘要： A method of aligning a mask pattern and a wafer pattern by referring to alignment marks on chips is provided wherein all of the chips to be used for alignment are classified into a plurality of groups so that the shot array alignment is carried out by referring to the alignment marks which are provided at different positions in individual chips. The alignment marks and chip positions for the alignment marks are different for each of the groups.

摘要翻译： 提供了通过参考芯片上的对准标记来对准掩模图案和晶片图案的方法，其中用于对准的所有芯片被分成多个组，使得通过参考 设置在各个芯片的不同位置的对准标记。 对准标记的对准标记和芯片位置对于每个组是不同的。

公开(公告)号：US20100296069A1

公开(公告)日：2010-11-25

申请号：US12662959

申请日：2010-05-13

申请人： Seiji Matsuura

发明人： Seiji Matsuura

IPC分类号： G03B27/42

CPC分类号： G03F7/70466 ,  G03F7/70433

摘要： There is provided a pattern division method to form crowded patterns accurately on a substrate includes acquiring a mask pattern, dividing a predetermine area into a plurality of areas to prepare a division pattern in which the plurality of the areas are classified into first and second groups, generating a reduced mask pattern by reducing each of two or more patterns laid out in the object mask pattern substantially toward the center of the particular pattern, overlapping the division pattern with the reduced mask pattern and extracting the reduced patterns overlapped with the area classified as the first group of the division pattern to generate a first reduced mask pattern, and restoring the reduced patterns laid out in the first reduced mask pattern to the original size before generation of the reduced mask pattern.

摘要翻译： 提供了一种在衬底上精确地形成拥挤图案的图案划分方法，包括获取掩模图案，将预定区域划分为多个区域以制备其中多个区域被分类为第一和第二组的划分图案， 通过将基本上朝向特定图案的中心布置在对象掩模图案中的两个或更多个图案中的每一个图案重新缩小以减少掩模图案并提取与分类为 第一组划分图案，以生成第一缩小的掩模图案，以及在缩小的掩模图案的生成之前将在第一缩小的掩模图案中布置的缩小图案恢复到原始大小。