摘要:
A semiconductor memory device includes a plurality of memory cells each having a bipolar transistor whose collector-emitter voltage V.sub.CE is controlled according to the base potential to satisfy the condition of I.sub.BE
摘要:
A semiconductor memory device comprises a memory array including a plurality of memory cells arranged in a matrix form, a plurality of word lines arranged in column and a plurality of bit lines arranged in row. Each memory cell includes a bipolar transistor in which a collector-emitter voltage is controlled so that the polarity of a base current changes is changed in accordance with an increase in a base-emitter voltage, and a switching element, provided between the base of the bipolar transistor and an associated bit line and controllable by an associated word line. A switch circuit is provided for applying a collector voltage to the collector of the bipolar transistor smaller in a second state where an associated one of the memory cells is holding data than in a second state where the associated memory cell is accessible for data reading and data writing.
摘要:
Here is disclosed a dynamic semiconductor memory of high integration density, which has parallel word lines and parallel bit lines formed on a substrate. The bit lines include a pair of bit lines. A memory cell is coupled to a word line and to one bit line of the bit-line pair. The memory cell is composed of MOSFETs of a submicron size. A sense amplifier section is connected to the pair of bit lines, and senses and amplifies the potential difference between the pair of bit lines in a data readout mode. The amplifier section has a BIMOS structure, having MOSFETs and bipolar transistors. It has a driver section comprised of bipolar transistors.
摘要:
An NAND cell type EEPROM comprising a memory cell array wherein an NAND cell unit having a plurality of electrically rewritable memory cells is connected in series, and the NAND cell is formed on a semiconductor substrate in a matrix array, a plurality of control gate lines CG each provided to cross an NAND cell group of the same row, bit lines BL each provided to cross the NAND cell group of the same column, wherein driver circuit are provided at both sides of the memory cell array in a ratio of one to two NAND cell units so as to drive the control gate lines CG, the plurality of the control gate lines CG, provided to cross the NAND cell unit of the even row, is connected to the left driver circuit, and the plurality of the control gate lines CG, provided to cross the NAND cell unit of the odd row, is connected to the right driver circuit.
摘要:
An NAND cell type EEPROM comprising a memory cell array wherein an NAND cell unit having a plurality of electrically rewritable memory cells is connected in series, and the NAND cell is formed on a semiconductor substrate in a matrix array, a plurality of control gate lines CG each provided to cross an NAND cell group of the same row, bit lines BL each provided to cross the NAND cell group of the same column, wherein driver circuit are provided at both sides of the memory cell array in a ratio of one to two NAND cell units so as to drive the control gate lines CG, the plurality of the control gate lines CG, provided to cross the NAND cell unit of the even row, is connected to the left driver circuit, and the plurality of the control gate lines CG, provided to cross the NAND cell unit of the odd row, is connected to the right driver circuit.
摘要:
A semiconductor memory device which receives a row address strobe (RAS) signal and a column address strobe (CAS) signal from an external device. The device includes rewritable memory cells formed on a semiconductor substrate, a plurality of bit lines, a plurality of word lines, and a transfer gate coupled between the bit lines and input/output (I/O) lines and controlled by a column select line or signal. In one embodiment, a first transfer gate is connected between the bit lines and a second transfer gate, the second transfer gate connected between the first transfer gate and an input/output (I/O) line and controlled by a column select line (CSL). A third transfer gate may also by provided. The first transfer gate is driven in response to a clock signal which is enabled at substantially the same time as a word line of the plurality of word lines is selected during both read and write cycles. Thus, during a write cycle in which the CAS signal is enabled prior to the RAS signal, a selected CSL can be increased from a first voltage (VSS) to one of a second voltage (Vdd) and {fraction (3/2)} Vdd as soon as a column address is input.
摘要:
Bit-line pairs and word lines are disposed perpendicular to one another and dRAM cells are placed at their intersections. A dummy cell is connected to each of the bit-line pairs. A bit-line sense amplifier and an equalizer are connected to one end of the bit-line pair. The other end of the bit-line pair is connected to a latch type memory cell via a first transfer gate. The latch type memory cell are further connected to input/output line pair via a second transfer gate controlled by a column select line. During a RAS active period in a read cycle a word line is selected so that data is read from a dRAM cell and the dummy cell connected to the selected word line onto the bit-line pairs. The bit-line sense amplifiers are activated so that the levels of the bit lines become determinate. The first transfer gates are subsequently turned on to transfer the data on the bit-line pairs to the latch type cells. After the memory cells are rewritten into, the selected word line is reset and the latch type memory cells are electrically disconnected from the bit-line pairs. The equalizers operate to precharge the bit-line pairs. When CAS is rendered active and a column is selected, a corresponging second transfer gate is turned on so that data in the latch type memory cell is read out onto the input/output line pairs.
摘要:
A semiconductor memory device includes random-access memory cells arranged as an integrated memory cell array, a plurality of bit lines for exchanging data with each of the memory cells, and a plurality of word lines intersecting with the bit lines. An accessing method is applied to an address multiplexed type device in which a column address for selecting a bit line and a row address for selecting a word line are obtained from a single circuit. In this device, the input order of the column and row addresses during a read cycle differs from that during a write cycle. One of the word lines of the device is made active and then inactive during an active period of a row address strobe signal thereby speeding up the read/write operation.