公开(公告)号：US09065242B2

公开(公告)日：2015-06-23

申请号：US13474053

申请日：2012-05-17

Applicant: Jeffrey R. Chen ,  Kenji Numata ,  Stewart T. Wu ,  Guangning Yang

Inventor： Jeffrey R. Chen ,  Kenji Numata ,  Stewart T. Wu ,  Guangning Yang

IPC: H01S3/10 ,  H01S5/0625 ,  G01S7/484 ,  H01S3/13 ,  H01S5/0687

CPC classification number: H01S5/06256 ,  G01S7/484 ,  H01S3/1304 ,  H01S3/1305 ,  H01S5/0687

Abstract: An apparatus and method is provided to enable precision and fast laser frequency tuning. For instance, a fast tunable slave laser may be dynamically offset-locked to a reference laser line using an optical phase-locked loop. The slave laser is heterodyned against a reference laser line to generate a beatnote that is subsequently frequency divided. The phase difference between the divided beatnote and a reference signal may be detected to generate an error signal proportional to the phase difference. The error signal is converted into appropriate feedback signals to phase lock the divided beatnote to the reference signal. The slave laser frequency target may be rapidly changed based on a combination of a dynamically changing frequency of the reference signal, the frequency dividing factor, and an effective polarity of the error signal. Feed-forward signals may be generated to accelerate the slave laser frequency switching through laser tuning ports.

Abstract translation: 提供了一种能够实现精确和快速的激光频率调谐的装置和方法。 例如，使用光锁相环可以将快速可调的从属激光器动态地偏置锁定到参考激光线。 从属激光器与参考激光线进行外差，以产生随后频率分频的节拍。 可以检测分割的拍子和参考信号之间的相位差，以产生与相位差成比例的误差信号。 误差信号被转换成适当的反馈信号，以将分频的beatnote锁定到参考信号。 可以基于参考信号的动态变化的频率，分频因子和误差信号的有效极性的组合来快速地改变从属激光频率目标。 可以产生前馈信号，以通过激光调谐端口加速从属激光器频率切换。

公开(公告)号：US07970025B2

公开(公告)日：2011-06-28

申请号：US12496954

申请日：2009-07-02

Applicant: Jeffrey Livas ,  James I. Thorpe ,  Kenji Numata

Inventor： Jeffrey Livas ,  James I. Thorpe ,  Kenji Numata

IPC: H01S3/10

CPC classification number: H01S3/1398

Abstract: A method and system for stabilizing a laser to a frequency reference with an adjustable offset. The method locks a sideband signal generated by passing an incoming laser beam through the phase modulator to a frequency reference, and adjusts a carrier frequency relative to the locked sideband signal by changing a phase modulation frequency input to the phase modulator. The sideband signal can be a single sideband (SSB), dual sideband (DSB), or an electronic sideband (ESB) signal. Two separate electro-optic modulators can produce the DSB signal. The two electro-optic modulators can be a broadband modulator and a resonant modulator. With a DSB signal, the method can introduce two sinusoidal phase modulations at the phase modulator. With ESB signals, the method can further drive the optical phase modulator with an electrical signal with nominal frequency Ω1 that is phase modulated at a frequency Ω2.

Abstract translation: 一种用于将激光器稳定到具有可调偏移的频率参考的方法和系统。 该方法锁定通过将入射激光束通过相位调制器而产生的边带信号为频率参考，并且通过改变输入到相位调制器的相位调制频率来调整相对于锁定边带信号的载波频率。 边带信号可以是单边带（SSB），双边带（DSB）或电子边带（ESB）信号。 两个单独的电光调制器可以产生DSB信号。 两个电光调制器可以是宽带调制器和谐振调制器。 利用DSB信号，该方法可以在相位调制器上引入两个正弦相位调制。 使用ESB信号，该方法可以用具有标称频率的电信号进一步驱动光相位调制器，并且以频率ωgr相位调制OHgr; 2。

公开(公告)号：US20100182413A1

公开(公告)日：2010-07-22

申请号：US12689504

申请日：2010-01-19

Applicant: Kenji Numata

Inventor： Kenji Numata

IPC: H04N7/18

CPC classification number: A61B1/05 ,  A61B1/00039 ,  A61B1/0005 ,  A61B1/00105

Abstract: An endoscope apparatus includes: a reading unit which reads video data and control data from a recording medium, the recording medium containing the video data including a plurality of image data and the control data used to control a measurement operation; a measuring unit which performs the measurement operation on the basis of the image data of the video data read by the reading unit; and a control unit which controls the measuring unit on the basis of the control data read by the reading unit.

Abstract translation: 内窥镜装置包括：读取单元，其从记录介质读取视频数据和控制数据，所述记录介质包含包含多个图像数据的视频数据和用于控制测量操作的控制数据; 测量单元，其基于由读取单元读取的视频数据的图像数据执行测量操作; 以及控制单元，其基于由读取单元读取的控制数据来控制测量单元。

公开(公告)号：US6141288A

公开(公告)日：2000-10-31

申请号：US314028

申请日：1999-05-19

Applicant: Kenji Numata ,  Masaki Ogihara

Inventor： Kenji Numata ,  Masaki Ogihara

IPC: G11C11/406 ,  G11C5/00 ,  G11C7/10 ,  G11C11/401 ,  G11C11/407 ,  G11C11/408 ,  G11C29/00 ,  G11C29/44 ,  G11C29/50 ,  G11C29/56 ,  H01L27/10 ,  G11C8/00

CPC classification number: G11C11/4085 ,  G11C11/406 ,  G11C29/028 ,  G11C29/44 ,  G11C29/50 ,  G11C29/50016 ,  G11C5/00 ,  G11C5/06 ,  G11C7/1018 ,  G11C11/401

Abstract: A semiconductor integrated circuit device is described. The semiconductor device includes a switching signal generator having an output terminal which outputs a switching signal to change refresh modes. The semiconductor device also includes a first address buffer having an output terminal which outputs a first address signal, a second address buffer having an output terminal which outputs a second signal, a decoder having a first input terminal which receives the first address signal and having a second input terminal, a sense amplifier controller having an input terminal, and a switch having a first input terminal which receives the switching signal, a second input terminal which receives the second address signal, a first output terminal which outputs the second address signal to the second input terminal of the decoder and a second output terminal which outputs the second address signal to the input terminal of the sense amplifier controller, the switch being controlled by the switching signal.

Abstract translation: 描述半导体集成电路器件。 半导体器件包括具有输出端子的开关信号发生器，该输出端子输出切换信号以改变刷新模式。 半导体器件还包括具有输出第一地址信号的输出端的第一地址缓冲器，具有输出第二信号的输出端的第二地址缓冲器，具有接收第一地址信号并具有第一地址信号的第一输入端的解码器 第二输入端，具有输入端的读出放大器控制器和具有接收切换信号的第一输入端的开关，接收第二地址信号的第二输入端，向第二输入端输出第二地址信号的第一输出端， 所述解码器的第二输入端子和将所述第二地址信号输出到所述读出放大器控制器的输入端的第二输出端子，所述开关由所述开关信号控制。

公开(公告)号：US5812481A

公开(公告)日：1998-09-22

申请号：US683780

申请日：1996-07-16

Applicant: Kenji Numata ,  Masaki Ogihara

Inventor： Kenji Numata ,  Masaki Ogihara

IPC: G11C11/406 ,  G11C5/00 ,  G11C7/10 ,  G11C11/401 ,  G11C11/407 ,  G11C11/408 ,  G11C29/00 ,  G11C29/44 ,  G11C29/50 ,  G11C29/56 ,  H01L27/10 ,  G11C8/00

CPC classification number: G11C11/4085 ,  G11C11/406 ,  G11C29/028 ,  G11C29/44 ,  G11C29/50 ,  G11C29/50016 ,  G11C5/00 ,  G11C5/06 ,  G11C7/1018 ,  G11C11/401

Abstract: A semiconductor memory device includes a buffer for outputting an address signal and a decoding circuit having an input for receiving the address signal. A switch electrically connects the buffer to the input of the decoding circuit if a refresh mode specifying signal specifies a first data refresh mode, and electrically disconnects the buffer from the input of the decoding circuit if the refresh mode specifying signal specifies a second data refresh mode different from the first data refresh mode. An activating/deactivating circuit activates the input of the decoding circuit if the refresh mode specifying signal specifies the first data refresh mode and deactivates the input of the decoding circuit if the refresh mode specifying signal specifies the second data refresh mode.

Abstract translation: 半导体存储器件包括用于输出地址信号的缓冲器和具有用于接收地址信号的输入的解码电路。 如果刷新模式指定信号指定第一数据刷新模式，则开关将缓冲器电连接到解码电路的输入，并且如果刷新模式指定信号指定第二数据刷新模式，则将缓冲器与解码电路的输入电断开 与第一个数据刷新模式不同。 如果刷新模式指定信号指定第一数据刷新模式，则激活/去激活电路激活解码电路的输入，并且如果刷新模式指定信号指定第二数据刷新模式，则解除电路的输入。

公开(公告)号：US5377152A

公开(公告)日：1994-12-27

申请号：US978883

申请日：1992-11-19

Applicant: Natsuki Kushiyama ,  Tohru Furuyama ,  Kenji Numata

Inventor： Natsuki Kushiyama ,  Tohru Furuyama ,  Kenji Numata

IPC: G11C29/02 ,  G11C29/24 ,  G11C29/50 ,  G11C7/00

CPC classification number: G11C29/025 ,  G11C29/02 ,  G11C29/028 ,  G11C29/24 ,  G11C29/50 ,  G11C11/401 ,  G11C2029/5004 ,  G11C2029/5006

Abstract: A semiconductor memory comprises a dynamic type memory cell array arranged to form a matrix and provided with word lines commonly connected to memory cells of respective columns and bit lines commonly connected to memory cells of respective rows, a dummy cell section having a first set of dummy word lines connected to respective complimentary bit line pairs of said memory cell array by way of respective first capacitances and a second set of dummy word lines connected to respective complementary bit line pairs of said memory cell array by way of respective second capacitances, a dummy word line potential control circuit capable of optionally controlling the mode of driving selected dummy word lines when said word lines of said memory cell array are activated and sense amplifiers connected to the respective complementary bit line pairs of said memory cell array for reading data from selected memory cells of the memory cell array onto the related bit line.

Abstract translation: 半导体存储器包括动态型存储单元阵列，其布置成形成矩阵并且设置有通常连接到相应列的存储器单元的字线和共同连接到各行的存储单元的位线的虚拟单元部分，虚拟单元部分具有第一组虚拟 通过相应的第一电容连接到所述存储单元阵列的相应互补位线对的字线和通过相应的第二电容连接到所述存储单元阵列的相应互补位线对的第二组虚拟字线， 线电势控制电路，当所述存储单元阵列的所述字线被激活时，能够可选地控制驱动所选择的虚拟字线的模式，以及连接到所述存储单元阵列的相应互补位线对的读出放大器，用于从所选存储单元读取数据 的存储单元阵列到相关位线上。

公开(公告)号：US06295241B1

公开(公告)日：2001-09-25

申请号：US08251649

申请日：1994-05-31

Applicant: Shigeyoshi Watanabe ,  Tsuneaki Fuse ,  Koji Sakui ,  Masako Ohta ,  Yukihito Oowaki ,  Kenji Numata ,  Fujio Masuoka

Inventor： Shigeyoshi Watanabe ,  Tsuneaki Fuse ,  Koji Sakui ,  Masako Ohta ,  Yukihito Oowaki ,  Kenji Numata ,  Fujio Masuoka

IPC: G11C702

CPC classification number: G11C11/4091 ,  G11C7/062 ,  G11C7/14 ,  G11C11/4099

Abstract: Here is disclosed a dynamic semiconductor memory of high integration density, which has parallel word lines and parallel bit lines formed on a substrate. The bit lines include a pair of bit lines. A memory cell is coupled to a word line and to one bit line of the bit-line pair. The memory cell is composed of MOSFETs of a submicron size. A sense amplifier section is connected to the pair of bit lines, and senses and amplifies the potential difference between the pair of bit lines in a data readout mode. The amplifier section has a BIMOS structure, having MOSFETs and bipolar transistors. It has a driver section comprised of bipolar transistors.

Abstract translation: 这里公开了具有高集成度密度的动态半导体存储器，其具有在基板上形成的并行字线和并行位线。 位线包括一对位线。 存储器单元耦合到字线和位线对的一个位线。 存储单元由亚微米尺寸的MOSFET组成。 读出放大器部分连接到一对位线，并且在数据读出模式下感测和放大一对位线之间的电位差。 放大器部分具有BIMOS结构，具有MOSFET和双极晶体管。 它具有由双极晶体管组成的驱动器部分。

公开(公告)号：US5532963A

公开(公告)日：1996-07-02

申请号：US523741

申请日：1995-09-05

Applicant: Natsuki Kushiyama ,  Tohru Furuyama ,  Kenji Numata

Inventor： Natsuki Kushiyama ,  Tohru Furuyama ,  Kenji Numata

IPC: G11C29/02 ,  G11C29/24 ,  G11C29/50 ,  G11C7/00

CPC classification number: G11C29/025 ,  G11C29/02 ,  G11C29/028 ,  G11C29/24 ,  G11C29/50 ,  G11C11/401 ,  G11C2029/5004 ,  G11C2029/5006

Abstract: A semiconductor memory comprises a dynamic type memory cell array arranged to form a matrix and provided with word lines commonly connected to memory cells of respective columns and bit lines commonly connected to memory cells of respective rows, a dummy cell section having a first set of dummy word lines connected to respective complimentary bit line pairs of said memory cell array by way of respective first capacitances and a second set of dummy word lines connected to respective complementary bit line pairs of said memory cell array by way of respective second capacitances, a dummy word line potential control circuit capable of optionally controlling the mode of driving selected dummy word lines when said word lines of said memory cell array are activated and sense amplifiers connected to the respective complementary bit line pairs of said memory cell array for reading data from selected memory cells of the memory cell array onto the related bit line.

Abstract translation: 半导体存储器包括动态型存储单元阵列，其布置成形成矩阵并且设置有通常连接到相应列的存储器单元的字线和共同连接到各行的存储单元的位线的虚拟单元部分，虚拟单元部分具有第一组虚拟 通过相应的第一电容连接到所述存储单元阵列的相应互补位线对的字线和通过相应的第二电容连接到所述存储单元阵列的相应互补位线对的第二组虚拟字线， 线电势控制电路，当所述存储单元阵列的所述字线被激活时，能够可选地控制驱动所选择的虚拟字线的模式，以及连接到所述存储单元阵列的相应互补位线对的读出放大器，用于从所选存储单元读取数据 的存储单元阵列到相关位线上。

公开(公告)号：US20230238764A1

公开(公告)日：2023-07-27

申请号：US18099362

申请日：2023-01-20

Applicant: Thomas James Kane ,  Kenji Numata ,  John Lawrence Nightingale

Inventor： Thomas James Kane ,  Kenji Numata ,  John Lawrence Nightingale

IPC: H01S3/083 ,  H01S3/06 ,  H01S3/10

CPC classification number: H01S3/083 ,  H01S3/0627 ,  H01S3/1003

Abstract: A monolithic nonplanar ring oscillator (NPRO) laser with a large piezo-electric tuning range and high frequency slew rate, denoted as a μNPRO, is described. A tuning range of 3.5 GHz with 192 volts applied, corresponding to a tuning coefficient of 18.2 MHz/volt was experimentally demonstrated. This performance was achieved by making the solid-state gain element small, with a small distance between a piezo-electric element bonded to the solid-state gain element and a first lase plane in the solid-state gain element. The entire nonplanar ring lasing path within the solid-state gain element may lie within the half of the solid-state gain element closest to the bonded piezo-electric element. This large frequency modulation span and wide frequency modulation bandwidth, combined with unsurpassed coherence and high power, make this an attractive laser for frequency-modulated continuous-wave (FMCW) LIDAR.

公开(公告)号：US20100135342A1

公开(公告)日：2010-06-03

申请号：US12496954

申请日：2009-07-02

Applicant: Jeffrey Livas ,  James I. Thorpe ,  Kenji Numata

Inventor： Jeffrey Livas ,  James I. Thorpe ,  Kenji Numata

IPC: H01S3/13 ,  H01S3/10

CPC classification number: H01S3/1398

Abstract: A method and system for stabilizing a laser to a frequency reference with an adjustable offset. The method locks a sideband signal generated by passing an incoming laser beam through the phase modulator to a frequency reference, and adjusts a carrier frequency relative to the locked sideband signal by changing a phase modulation frequency input to the phase modulator. The sideband signal can be a single sideband (SSB), dual sideband (DSB), or an electronic sideband (ESB) signal. Two separate electro-optic modulators can produce the DSB signal. The two electro-optic modulators can be a broadband modulator and a resonant modulator. With a DSB signal, the method can introduce two sinusoidal phase modulations at the phase modulator. With ESB signals, the method can further drive the optical phase modulator with an electrical signal with nominal frequency Ω1 that is phase modulated at a frequency Ω2.

Abstract translation: 一种用于将激光器稳定到具有可调偏移的频率参考的方法和系统。 该方法锁定通过将入射激光束通过相位调制器而产生的边带信号为频率参考，并且通过改变输入到相位调制器的相位调制频率来调整相对于锁定边带信号的载波频率。 边带信号可以是单边带（SSB），双边带（DSB）或电子边带（ESB）信号。 两个单独的电光调制器可以产生DSB信号。 两个电光调制器可以是宽带调制器和谐振调制器。 利用DSB信号，该方法可以在相位调制器上引入两个正弦相位调制。 使用ESB信号，该方法可以用具有标称频率的电信号进一步驱动光相位调制器，并且以频率ωgr相位调制OHgr; 2。