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    Thin-Film Magnetic Head and Manufacturing Method Thereof
    1.
    发明申请
    Thin-Film Magnetic Head and Manufacturing Method Thereof 有权
    薄膜磁头及其制造方法

    公开(公告)号：US20080253037A1

    公开(公告)日：2008-10-16

    申请号：US11734047

    申请日：2007-04-11

    申请人： Takeo Kagami ,  Kazuki Sato ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Naoki Ohta

    发明人： Takeo Kagami ,  Kazuki Sato ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Naoki Ohta

    IPC分类号： G11B5/31

    CPC分类号： G11B5/3912 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/398

    摘要： A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an insulation layer formed to surround the MR multi-layered structure, an additional metal layer laminated on at least the MR multi-layered structure, an upper electrode layer made of a soft magnetic material laminated on the additional metal layer and the insulation layer, and an upper magnetic shield layer laminated on the upper electrode layer. The additional metal layer has a multi-layered structure including a nonmagnetic metal layer and a soft magnetic layer laminated on the nonmagnetic metal layer, and has a length along a track-width direction of the MR multi-layered structure larger than a width of a magnetization-free layer in the MR effect multi-layered structure.

    摘要翻译： 薄膜磁头包括下磁屏蔽层，形成在下磁屏蔽层上的MR多层结构，使得电流沿垂直于层压层表面的方向流动，形成为围绕MR多层结构的绝缘层， 至少层叠在MR多层结构上的附加金属层，层叠在附加金属层上的软磁性材料构成的上部电极层和绝缘层，以及层叠在上部电极上的上部磁屏蔽层 层。 附加金属层具有层叠在非磁性金属层上的非磁性金属层和软磁性层的多层结构，并且沿着MR多层结构的轨道宽度方向的长度大于 无磁化层的MR效应多层结构。

    Thin-film magnetic head and manufacturing method thereof
    2.
    发明授权
    Thin-film magnetic head and manufacturing method thereof 有权
    薄膜磁头及其制造方法

    公开(公告)号：US07715155B2

    公开(公告)日：2010-05-11

    申请号：US11734047

    申请日：2007-04-11

    申请人： Takeo Kagami ,  Kazuki Sato ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Naoki Ohta

    发明人： Takeo Kagami ,  Kazuki Sato ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Naoki Ohta

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3912 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  G11B5/398

    摘要： A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an insulation layer formed to surround the MR multi-layered structure, an additional metal layer laminated on at least the MR multi-layered structure, an upper electrode layer made of a soft magnetic material laminated on the additional metal layer and the insulation layer, and an upper magnetic shield layer laminated on the upper electrode layer. The additional metal layer has a multi-layered structure including a nonmagnetic metal layer and a soft magnetic layer laminated on the nonmagnetic metal layer, and has a length along a track-width direction of the MR multi-layered structure larger than a width of a magnetization-free layer in the MR effect multi-layered structure.

    摘要翻译： 薄膜磁头包括下磁屏蔽层，形成在下磁屏蔽层上的MR多层结构，使得电流沿垂直于层压层表面的方向流动，形成为围绕MR多层结构的绝缘层， 至少层叠在MR多层结构上的附加金属层，层叠在附加金属层上的软磁性材料构成的上部电极层和绝缘层，以及层叠在上部电极上的上部磁屏蔽层 层。 附加金属层具有层叠在非磁性金属层上的非磁性金属层和软磁性层的多层结构，并且沿着MR多层结构的轨道宽度方向的长度大于 无磁化层的MR效应多层结构。

    Thin film magnetic head having similarly structured resistive film pattern and magnetic bias layer
    6.
    发明授权
    Thin film magnetic head having similarly structured resistive film pattern and magnetic bias layer 有权
    具有类似结构的电阻膜图案和磁偏置层的薄膜磁头

    公开(公告)号：US08427790B2

    公开(公告)日：2013-04-23

    申请号：US12216162

    申请日：2008-06-30

    申请人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

    发明人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

    IPC分类号： G11B5/39

    CPC分类号： G11B5/398 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/3932

    摘要： A thin film magnetic head includes a magnetoresistive element having a recording-medium-facing-surface which is to be faced with a magnetic recording medium; a magnetic bias layer located on a side opposite to the recording-medium-facing-surface of the magnetoresistive element, and applying a bias magnetic field to the magnetoresistive element in a direction orthogonal to the recording-medium-facing-surface; and a resistive film pattern having the recording-medium-facing-surface, the resistive film pattern being located side by side with the magnetoresistive element in a track-width direction.

    摘要翻译： 薄膜磁头包括具有面向磁记录介质的记录介质面对表面的磁阻元件; 位于与所述磁阻元件的记录介质相对表面相对的一侧的磁偏置层，并且在与所述记录介质相对表面正交的方向上向所述磁阻元件施加偏置磁场; 以及具有记录介质面向表面的电阻膜图案，电阻膜图案与磁阻元件沿轨道宽度方向并排定位。

    Manufacturing method of thin-film magnetic head and thin-film magnetic head
    7.
    发明申请
    Manufacturing method of thin-film magnetic head and thin-film magnetic head 有权
    薄膜磁头和薄膜磁头的制造方法

    公开(公告)号：US20060067010A1

    公开(公告)日：2006-03-30

    申请号：US10971113

    申请日：2004-10-25

    申请人： Takeo Kagami ,  Takayasu Kanaya ,  Noriaki Kasahara ,  Kazuki Sato

    发明人： Takeo Kagami ,  Takayasu Kanaya ,  Noriaki Kasahara ,  Kazuki Sato

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/332 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A manufacturing method of a thin-film magnetic head includes a step of depositing an MR multi-layered film on a lower electrode layer, a step of patterning the deposited MR multi-layered film to define a track width, a step of forming a layer containing at least first insulation layer at both track-width direction sides of the patterned MR multi-layered film, a step of depositing a first additional upper metal layer on the patterned MR multi-layered film and on the layer containing at least first insulation layer, a step of patterning the first additional upper metal layer and the MR multi-layered film to define a length in a direction perpendicular to the track-width direction so as to obtain an MR multi-layered structure, a step of forming a second insulation layer to surround the first additional upper metal layer and the MR multi-layered structure, a step of removing by etching the second insulation layer on the first additional upper metal layer formed on the MR multi-layered structure, a step of thereafter, forming a second additional upper metal layer on the first additional upper metal layer and on the second insulation layer, and a step of forming an upper electrode layer on the second additional upper metal layer.

    摘要翻译： 薄膜磁头的制造方法包括在下电极层上沉积MR多层膜的步骤，对沉积的MR多层膜进行图案化以限定磁道宽度的步骤，形成层的步骤 在图案化MR多层膜的两个轨道宽度方向侧上至少含有第一绝缘层，在图案化MR多层膜上沉积第一附加上金属层和在至少包含第一绝缘层的层上沉积步骤 图案化第一附加上金属层和MR多层膜以在垂直于轨道宽度方向的方向上限定长度以获得MR多层结构的步骤，形成第二绝缘体的步骤 层以围绕第一附加上金属层和MR多层结构，通过蚀刻在形成在MR多层结构上的第一附加上金属层上的第二绝缘层去除步骤 其次，在第一附加上金属层和第二绝缘层上形成第二另外的上金属层，以及在第二另外的上金属层上形成上电极层的步骤。

    Thin-film magnetic head comprising bias layers having a large length in track width direction
    8.
    发明申请
    Thin-film magnetic head comprising bias layers having a large length in track width direction 失效
    薄膜磁头包括在磁道宽度方向上具有大长度的偏置层

    公开(公告)号：US20050195536A1

    公开(公告)日：2005-09-08

    申请号：US11066763

    申请日：2005-02-28

    申请人： Takeo Kagami ,  Noriaki Kasahara ,  Kazuki Sato ,  Takayasu Kanaya

    发明人： Takeo Kagami ,  Noriaki Kasahara ,  Kazuki Sato ,  Takayasu Kanaya

    IPC分类号： G11B5/39 ,  G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3932 ,  G11B2005/0008

    摘要： The thin-film magnetic head of the present invention comprises an MR sensor wherein a first ferromagnetic layer in which a magnetization direction is fixed with respect to external magnetic fields, a non-magnetic intermediate layer, and a second ferromagnetic layer in which a magnetization direction changes with respect to the external magnetic fields are stacked, and wherein a sense current flows substantially parallel to the stacked layer surface. The thin-film magnetic head comprises a pair of bias layers for exerting a bias magnetic field upon the MR sensor; the bias layers extending substantially symmetrically from two sides of the MR sensor in a direction of track width of a recording medium, each bias layer being connected with the MR sensor over a length which is substantially the same as the MR sensor in a direction perpendicular to the air bearing surface; and each bias layer having a shape which is contained within an imaginary rectangle which has its long sides along the air bearing surface in the direction of the track width of the recording medium and its short sides in the direction perpendicular to the air bearing surface and which contacts the short side of the imaginary rectangle which is opposite the short side which contacts the MR sensor. The thin-film magnetic head further comprises a pair of lead layers for supplying the sense current to the MR sensor each extending from the air bearing surface to cover at least a portion of each of the bias layers.

    摘要翻译： 本发明的薄膜磁头包括MR传感器，其中磁化方向相对于外部磁场固定的第一铁磁层，非磁性中间层和第二铁磁层，其中磁化方向 相对于外部磁场的变化被堆叠，并且其中感测电流基本上平行于堆叠的层表面流动。 薄膜磁头包括用于在MR传感器上施加偏置磁场的一对偏置层; 偏置层在MR传感器的两侧沿着记录介质的磁道宽度的方向基本上对称地延伸，每个偏置层在与MR传感器垂直的方向上与MR传感器基本相同的长度上与MR传感器连接 空气轴承表面; 并且每个偏置层具有包含在假想矩形内的形状，该假想矩形具有沿着记录介质的轨道宽度的空气轴承表面的长边，并且在垂直于空气轴承表面的方向上具有短边， 接触与MR传感器接触的短边相反的假想矩形的短边。 薄膜磁头还包括一对引导层，用于向MR传感器提供感测电流，每个引导层从空气支承表面延伸以覆盖每个偏置层的至少一部分。

    Magneto-resistive device with reduced susceptibility to ion beam damage
    10.
    发明授权
    Magneto-resistive device with reduced susceptibility to ion beam damage 失效
    具有降低的离子束损伤敏感性的磁阻器件

    公开(公告)号：US07057859B2

    公开(公告)日：2006-06-06

    申请号：US10600444

    申请日：2003-06-23

    申请人： Takeo Kagami ,  Kazuki Sato ,  Takayasu Kanaya ,  Shunji Saruki ,  Tetsuya Kuwashima

    发明人： Takeo Kagami ,  Kazuki Sato ,  Takayasu Kanaya ,  Shunji Saruki ,  Tetsuya Kuwashima

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3106 ,  G11B5/313 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996

    摘要： A magneto-resistive device is improved in characteristics by removing a surface oxide film to reduce the resistance and reducing an ion beam damage. The magneto-resistive device has a magneto-resistive layer which comprises a tunnel barrier layer, an underlying pinned layer, and an overlying free layer. A non-magnetic layer is formed on the free layer for protection. A composite-layer film comprised of an insulating layer and a damage reducing layer is formed in contact with an effective region which is effectively involved in detection of magnetism in the magneto-resistive layer without overlapping with the effective region. The damage reducing layer is made of a material which includes at least one element, the atomic weight of which is larger than that of silicon. The insulating layer and damage reducing layer do not constitute a magnetic domain control layer for applying a biasing magnetic field to the free layer.

    摘要翻译： 通过去除表面氧化膜以降低电阻并减少离子束损伤，改善了磁阻元件的特性。 磁阻装置具有磁阻层，其包括隧道阻挡层，下面的被钉扎层和上覆自由层。 在自由层上形成非磁性层以进行保护。 形成与绝缘层和损伤减少层组成的复合层膜与有效区域接触，该有效区域有效地涉及磁阻层中的磁性检测，而不与有效区域重叠。 损伤减少层由包括至少一种元素的材料制成，其原子量大于硅的原子量。 绝缘层和损伤降低层不构成用于向自由层施加偏置磁场的磁畴控制层。