摘要:
An ester compound of formula (1) is provided. R1 is H or methyl, R2 is tertiary C4-20 alkyl, and k=0 or 1. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance and substrate adhesion, and is suited for micropatterning using electron beams or deep-UV.
摘要:
A polymer comprising units of formulas (1) and (2) and having a Mw of 1,000-500,000 is provided. R1 is H, CH3 or CH2CO2R3, R2 is H, CH3 or CO2R3, R3 is alkyl, R4 is H, alkyl, alkoxyalkyl or acyl, R5 is alkyl or aryl, Y is a divalent hydrocarbon group which may contain a hetero atom and which forms a ring with the carbon atom, Z is a trivalent hydrocarbon group, k is 0 or 1, and W is —O— or —(NR)— wherein R is H or alkyl. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and lends itself to micropatterning with electron beams or deep-UV rays.
摘要:
A novel ester compound having an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl ester as the acid-decomposable site is used as a dissolution regulator to formulate a resist composition having a high sensitivity, resolution, etching resistance and storage stability.
摘要:
A novel ester compound having an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.
摘要:
An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, k is 0 or 1, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom and which may contain a hetero atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etching resistance, and is suited for micropatterning using electron beams or deep-UV.
摘要翻译:提供下式(1)的酯化合物:R1是H,甲基或CH2CO2R3,R2是H,甲基或CO2R3,R3是C1-C15烷基,k是0或1,Z是二价C 2 -C 20烃 与碳原子形成单环或桥环的基团,其可以含有杂原子,m为0或1,n为0,1,2或3,2m + n = 2或3.一种抗蚀剂组合物,其包含 作为基础树脂,由酯化合物产生的聚合物对高能辐射敏感,具有优异的灵敏度,分辨率和耐蚀刻性,并且适用于使用电子束或深UV的微图案。
摘要:
An ester compound of the following formula (1) is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is C1-C15 alkyl, Z is a divalent C2-C20 hydrocarbon group which forms a single ring or bridged ring with the carbon atom, m is 0 or 1, n is 0, 1, 2 or 3, and 2m+n=2 or 3. A resist composition comprising as the base resin a polymer resulting from the ester compound is sensitive to high-energy radiation, has excellent sensitivity and resolution, and is suited for micropatterning using electron beams or deep-UV.
摘要翻译:提供下式(1)的酯化合物:R 1是H,甲基或CH 2 CO 2 R 3,R 2是H,甲基或CO 2 R 3,R 3是C 1 -C 15烷基,Z是形成单环的二价C 2 -C 20烃基 或与碳原子的桥环,m为0或1,n为0,1,2或3,2m + n = 2或3.含有由酯化合物得到的聚合物作为基础树脂的抗蚀剂组合物是敏感的 对高能辐射,具有优异的灵敏度和分辨率,适用于使用电子束或深紫外线的微图案。
摘要:
A resist composition comprising an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl ester compound as a dissolution regulator has a high sensitivity, resolution, etching resistance and storage stability and lends itself to micropatterning with electron beams or deep-UV rays.
摘要:
Ester compounds of formula (1) are useful as monomers to form base resins for use in chemically amplified resist compositions adapted for micropatterning lithography. R1 is H or C1-6 alkyl, R2 is an acid labile group, k is 0 or 1, and m is an integer from 0 to 5.
摘要:
A novel ester compound having an alkylcycloalkyl or alkylcycloalkenyl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.
摘要:
Cyclic acetal compounds of formula (1) wherein k=0 or 1 and n is an integer of 0 to 6 are novel. Using the cyclic acetal compounds as a monomer, polymers are obtained. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.