公开(公告)号：US08252700B2

公开(公告)日：2012-08-28

申请号：US12656232

申请日：2010-01-21

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C30B33/02 ,  C30B29/06 ,  C30B33/005 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/67109

摘要： In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.

摘要翻译： 在通过切片由切克劳斯基法制造的硅单晶锭进行切片而得到的晶片的热处理方法中，通过将保持时间设定为1200℃以上的最终温度，进行快速加热/冷却热处理， 在含有氧分压为1.0％以上且20％以下的氧和氩气的混合气体气氛中，硅的熔点以下等于或大于1秒且等于或小于60秒， 因此在硅晶片的表面上形成厚度为9.1nm以下或24.3nm以上的氧化膜。

公开(公告)号：US08399341B2

公开(公告)日：2013-03-19

申请号：US13387125

申请日：2010-05-17

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/20

CPC分类号： H01L21/3225

摘要： The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T1 of 1300° C. or higher and the melting point of silicon or lower, keeping the wafer at T1, rapidly cooling the wafer to T2 of 400-800° C. and keeping the wafer at T2; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T2, rapidly heating the wafer from T2 to T3 of 1250° C. or higher and the melting point of silicon or lower, keeping the wafer at T3 and rapidly cooling the wafer.

摘要翻译： 本发明是提供一种硅晶片的热处理方法，其减少了生长中的缺陷，同时抑制了RTP期间的滑移产生并提高了晶片的表面粗糙度。 该方法在引入稀有气体的同时进行第一热处理，第一热处理包括将晶片快速加热至T1至1300℃或更高的温度，以及将晶片保持在T1处的硅的熔点或更低的温度，迅速地 将晶片冷却至T2至400-800℃，并将晶片保持在T2; 并且在引入20-100体积％的氧气的同时进行第二热处理。 ％，第二热处理包括将晶片保持在T2的步骤，将晶片从T2快速加热至T3，达到1250℃或更高，硅的熔点或更低，使晶片保持在T3，并快速冷却晶片 。

公开(公告)号：US20120184091A1

公开(公告)日：2012-07-19

申请号：US13387125

申请日：2010-05-17

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/263

CPC分类号： H01L21/3225

摘要： The invention is to provide a method for heat treating a silicon wafer reducing grown-in defects while suppressing generation of slip during RTP and improving surface roughness of the wafer. The method performing a first heat treatment while introducing a rare gas, the first heat treatment comprising the steps of rapidly heating the wafer to T1 of 1300° C. or higher and the melting point of silicon or lower, keeping the wafer at T1, rapidly cooling the wafer to T2 of 400-800° C. and keeping the wafer at T2; and performing a second heat treatment while introducing an oxygen gas in an amount of 20-100 vol. %, the second heat treatment comprising the steps of keeping the wafer at T2, rapidly heating the wafer from T2 to T3 of 1250° C. or higher and the melting point of silicon or lower, keeping the wafer at T3 and rapidly cooling the wafer.

摘要翻译： 本发明是提供一种硅晶片的热处理方法，其减少了生长中的缺陷，同时抑制了RTP期间的滑移产生并提高了晶片的表面粗糙度。 该方法在引入稀有气体的同时进行第一热处理，第一热处理包括将晶片快速加热至T1至1300℃或更高的温度，以及将晶片保持在T1处的硅的熔点或更低的温度，迅速地 将晶片冷却至T2至400-800℃，并将晶片保持在T2; 并且在引入20-100体积％的氧气的同时进行第二次热处理。 ％，第二热处理包括将晶片保持在T2的步骤，将晶片从T2快速加热至T3，达到1250℃或更高，硅的熔点或更低，使晶片保持在T3，并快速冷却晶片 。

公开(公告)号：US20100038757A1

公开(公告)日：2010-02-18

申请号：US12512492

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

IPC分类号： H01L29/36 ,  H01L21/26 ,  H01L21/322

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

摘要翻译： 将通过切克劳斯基法生长的硅单晶锭制成的硅晶片在氧化气体气氛中在1300℃以上但小于1380℃的最高温度（T1）下进行快速加热/冷却热处理 氧分压为20％以上但小于100％。 根据本发明的硅晶片在至少包括硅晶片的器件有源区的无缺陷区（DZ层）中具有0.7×10 18原子/ cm 3的氧固溶体浓度的高氧浓度区域 以上，同时无缺陷区域含有过饱和状态的间隙硅。

公开(公告)号：US08476149B2

公开(公告)日：2013-07-02

申请号：US12512492

申请日：2009-07-30

申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Yoichiro Mochizuki ,  Akihiko Kobayashi ,  Senlin Fu

IPC分类号： H01L29/36

CPC分类号： H01L21/324 ,  C30B29/06 ,  C30B33/02 ,  H01L21/3225

摘要： A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

摘要翻译： 将通过切克劳斯基法生长的硅单晶锭制成的硅晶片在氧化气体气氛中在1300℃以上但小于1380℃的最高温度（T1）下进行快速加热/冷却热处理 氧分压为20％以上但小于100％。 根据本发明的硅晶片在至少包括硅晶片的器件有源区的无缺陷区（DZ层）中具有0.7×10 18原子/ cm 3的氧固溶体浓度的高氧浓度区域 以上，同时无缺陷区域含有过饱和状态的间隙硅。

公开(公告)号：US20100197146A1

公开(公告)日：2010-08-05

申请号：US12656232

申请日：2010-01-21

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

IPC分类号： H01L21/302

CPC分类号： C30B33/02 ,  C30B29/06 ,  C30B33/005 ,  H01L21/3225 ,  H01L21/324 ,  H01L21/67109

摘要： In a method of heat treating a wafer obtained by slicing a silicon single crystal ingot manufactured by the Czochralski method, a rapid heating/cooling heat treatment is carried out by setting a holding time at an ultimate temperature of 1200° C. or more and a melting point of silicon or less to be equal to or longer than one second and to be equal to or shorter than 60 seconds in a mixed gas atmosphere containing oxygen having an oxygen partial pressure of 1.0% or more and 20% or less and argon, and an oxide film having a thickness of 9.1 nm or less or 24.3 nm or more is thus formed on a surface of the silicon wafer.

摘要翻译： 在通过切片由切克劳斯基法制造的硅单晶锭进行切片而得到的晶片的热处理方法中，通过将保持时间设定为1200℃以上的最终温度，进行快速加热/冷却热处理， 在含有氧分压为1.0％以上且20％以下的氧和氩气的混合气体气氛中，硅的熔点以下等于或大于1秒且等于或小于60秒， 因此在硅晶片的表面上形成厚度为9.1nm以下或24.3nm以上的氧化膜。

公开(公告)号：US08999864B2

公开(公告)日：2015-04-07

申请号：US13322080

申请日：2010-05-28

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

IPC分类号： H01L21/26 ,  H01L21/00 ,  H01L21/322

CPC分类号： H01L21/3225 ,  Y10S438/928

摘要： A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.

摘要翻译： 提供了一种用于防止大块区域中的空隙缺陷成为装置处理中的污染源和滑移产生的硅晶片。 并且提供了一种用于在晶片表面附近的区域中减少诸如COP之类的晶体缺陷的热处理方法作为器件有源区。 硅晶片具有作为无缺陷区域的表面区域1和包括多面体的空隙的主体区域2，其基本形状为八面体，多面体的角部为弯曲形状，内壁 氧化膜去除空隙缺陷。 通过进行热处理方法来提供硅晶片，当将通过CZ方法制造的硅晶片经受RTP时，将待供给的气体，空间的内部压力和最大可实现温度设定为预定值。

公开(公告)号：US20120139088A1

公开(公告)日：2012-06-07

申请号：US13322080

申请日：2010-05-28

申请人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

发明人： Takeshi Senda ,  Hiromichi Isogai ,  Eiji Toyoda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima ,  Hiroyuki Saito

IPC分类号： H01L29/02 ,  H01L21/26

CPC分类号： H01L21/3225 ,  Y10S438/928

摘要： A silicon wafer for preventing a void defect in a bulk region from becoming source of contamination and slip generation in a device process is provided. And a heat-treating method thereof for reducing crystal defects such as COP in a region near the wafer surface to be a device active region is provided. The silicon wafer has a surface region 1 which is a defect-free region and a bulk region 2 including void defect of a polyhedron whose basic shape is an octahedron in which a corner portion of the polyhedron is in the curved shape and an inner-wall oxide film the void defect is removed. The silicon wafer is provided by performing a heat-treating method in which gas to be supplied, inner pressure of spaces and a maximum achievable temperature are set to a predetermined value when subjecting the silicon wafer produced by a CZ method to RTP.

摘要翻译： 提供了一种用于防止大块区域中的空隙缺陷成为装置处理中的污染源和滑移产生的硅晶片。 并且提供了一种用于在晶片表面附近的区域中减少诸如COP之类的晶体缺陷的热处理方法作为器件有源区。 硅晶片具有作为无缺陷区域的表面区域1和包括多面体的空隙的主体区域2，其基本形状为八面体，多面体的角部为弯曲形状，内壁 氧化膜去除空隙缺陷。 通过进行热处理方法来提供硅晶片，当将通过CZ方法制造的硅晶片经受RTP时，将待供给的气体，空间的内部压力和最大可实现温度设定为预定值。

公开(公告)号：US20130078588A1

公开(公告)日：2013-03-28

申请号：US13626151

申请日：2012-09-25

申请人： Takeshi Senda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Susumu Maeda

发明人： Takeshi Senda ,  Koji Araki ,  Tatsuhiko Aoki ,  Haruo Sudo ,  Susumu Maeda

IPC分类号： F27D3/00

CPC分类号： H01L21/3225 ,  H01L21/67115

摘要： A method for heat-treating a silicon wafer is provided in which in-plane uniformity in BMD density along a diameter of a bulk of the wafer grown by the CZ process can be improved. Further, a method for heat-treating a silicon wafer is provided in which in-plane uniformity in BMD size can also be improved and COP of a surface layer of the wafer can be reduced. The method includes a step of a first heat treatment in which the CZ silicon wafer is heated to a temperature from 1325 to 1400° C. in an oxidizing gas atmosphere, held at the temperature, and then cooled at a cooling rate of from 50 to 250° C./second, and a step of a second heat treatment in which the wafer is heated to a temperature from 900 to 1200° C. in a non-oxidizing gas atmosphere, held at the temperature, and then cooled.

摘要翻译： 提供了一种用于热处理硅晶片的方法，其中可以提高沿着通过CZ工艺生长的晶片的大部分直径的BMD密度的面内均匀性。 此外，提供了一种用于热处理硅晶片的方法，其中还可以提高BMD尺寸内的面内均匀性，并且可以降低晶片的表面层的COP。 该方法包括第一热处理步骤，其中将CZ硅晶片在氧化气体气氛中加热至1325〜1400℃，保持该温度，然后以50〜 250℃/秒，以及在非氧化性气体气氛中将晶片加热至900〜1200℃的温度的第二热处理工序，然后冷却。

公开(公告)号：US20080166891A1

公开(公告)日：2008-07-10

申请号：US11965214

申请日：2007-12-27

申请人： Manabu Hirasawa ,  Koji Izunome ,  Koji Araki ,  Tatsuhiko Aoki

发明人： Manabu Hirasawa ,  Koji Izunome ,  Koji Araki ,  Tatsuhiko Aoki

IPC分类号： H01L21/00

CPC分类号： H01L21/324 ,  H01L21/3247

摘要： The present invention provides a heat treatment method for a silicon wafer in which, with respect to a surface of the silicon wafer made flat at an atomic level by a high-temperature heat-treatment at 1,100° C. or more, a surface roughness of the wafer can be reduced compared with the conventional one while maintaining a step terrace structure on the surface of the above-mentioned wafer, and the surface of such a wafer can be formed stably. In the heat treatment method for the silicon wafer in which the step terrace structure is formed on the surface of the silicon wafer, after the silicon wafer is heat treated at 1,100° C. or more in a heat treatment furnace in a reducing gas or inert gas atmosphere, the atmosphere in the furnace is arranged to be of argon gas at a temperature of 500° C. or more in the furnace when reducing the temperature and argon gas continues to be introduced into the furnace until the silicon wafer is removed from the furnace, so that the step terrace structure on the surface of the above-mentioned silicon wafer may be maintained and a root mean square roughness Rms per 3 μm×3 μm may be 0.06 nm or less.

摘要翻译： 本发明提供了一种硅晶片的热处理方法，其中，通过在1100℃以上的高温热处理，使硅晶片的表面以原子级平坦化，表面粗糙度 与上述晶片相比，可以减少晶片，同时在上述晶片的表面上保持阶梯式平台结构，并且可以稳定地形成这种晶片的表面。 在硅晶片的表面上形成阶梯式台面结构的硅晶片的热处理方法中，在热处理炉中在1100℃以上的硅晶片在还原性气体或惰性气体中进行热处理 气体气氛中，炉内的气氛在炉内放置500℃以上的氩气，降低温度，继续向炉内引入氩气，直到硅晶片从 可以维持上述硅晶片表面上的阶梯式平台结构，并且每3mum×3mum的均方根粗糙度Rms可以为0.06nm以下。