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    BEARING CONSTITUENT MEMBER AND PROCESS FOR PRODUCING THE SAME, AND ROLLING BEARING HAVING BEARING CONSTITUENT MEMBER
    3.
    发明申请
    BEARING CONSTITUENT MEMBER AND PROCESS FOR PRODUCING THE SAME, AND ROLLING BEARING HAVING BEARING CONSTITUENT MEMBER 有权
    轴承构件及其制造方法以及具有轴承构件的滚动轴承

    公开(公告)号：US20110243488A1

    公开(公告)日：2011-10-06

    申请号：US12998864

    申请日：2009-12-11

    申请人： Katsuhiko Kizawa ,  Tsuyoshi Mikami ,  Kentarou Ono ,  Chikara Nakajima

    发明人： Katsuhiko Kizawa ,  Tsuyoshi Mikami ,  Kentarou Ono ,  Chikara Nakajima

    IPC分类号： F16C33/58 ,  B32B15/04 ,  C23C8/32 ,  C23C8/80

    CPC分类号： F16C33/62 ,  C21D1/06 ,  C21D1/18 ,  C21D6/04 ,  C21D9/40 ,  C21D2211/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/18 ,  C22C38/22 ,  C22C38/24 ,  C23C8/32 ,  F16C19/06 ,  F16C33/64 ,  Y10T29/49679

    摘要： There is provided a bearing constituent member capable of achieving a long life of a rolling bearing and securing sufficient static loading capacity and dimensional stability and a production process thereof as well as a rolling bearing having a long life and exhibiting sufficient static loading capacity and dimensional stability.A workpiece obtained from a steel containing 3.2 to 5.0% by mass of Cr and 0.05% by mass or more to less than 0.5% by mass of V is subjected to a heat treatment such as a carbonitriding treatment.Thereby, the following are achieved: the content of C in the surface layer ranging from the surface of the bearing constituent member of the rolling bearing to 10 μm is 1.1 to 1.6% by mass, Vickers hardness at the position of a depth of 50 μm from the surface is 740 to 900 (Rockwell C hardness is 62 to 67), the γ amount at the position of a depth of 10 μm from the surface is 20 to 55% by volume, particles composed of vanadium nitride having a particle diameter of 0.2 to 2 μm and/or particles composed of vanadium carbonitride having a particle diameter of 0.2 to 2 μm are present in the surface layer ranging from the surface to 10 μm, and the area ratio of the particles in the surface layer ranging from the surface to 10 μm is 1 to 10%.

    摘要翻译： 提供了能够实现滚动轴承的长寿命并且确保足够的静载荷能力和尺寸稳定性及其制造方法的轴承构件，以及具有长寿命并且具有足够的静载荷能力和尺寸稳定性的滚动轴承 。 从含有3.2〜5.0质量％的Cr和0.05质量％以上至小于0.5质量％的V钢获得的工件进行碳氮共渗处理等热处理。 由此，能够获得从滚动轴承的轴承构件的表面到表面的表面层中的C的含量为1.1〜1.6质量％，深度为50μm的维氏硬度 表面为740〜900（洛氏C硬度为62〜67），表面的深度为10μm的位置的γ量为20〜55体积％，粒径为 0.2〜2μm的粒子和/或粒径为0.2〜2μm的碳氮化钒构成的粒子的表面层存在于表面〜10μm的范围内，表面层的粒子的面积比例 至10μm为1〜10％。

    SEMICONDUCTOR APPARATUS
    4.
    发明申请
    SEMICONDUCTOR APPARATUS 有权

    公开(公告)号：US20080036088A1

    公开(公告)日：2008-02-14

    申请号：US11834734

    申请日：2007-08-07

    申请人： Chikara Nakajima ,  Takeshi Kurosawa ,  Megumi Mizuno

    发明人： Chikara Nakajima ,  Takeshi Kurosawa ,  Megumi Mizuno

    IPC分类号： H01L23/48

    CPC分类号： H01L23/24 ,  H01L23/051 ,  H01L23/4827 ,  H01L24/01 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/29111 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： The present invention provides a semiconductor apparatus having the improved thermal fatigue life against temperature change by lowering the maximum temperature on a jointing member existing between a semiconductor element and an electrode terminal and reducing the range of the temperature change. The semiconductor apparatus has a jointing member placed in between a semiconductor chip and a lead electrode to make the jointing member joint the semiconductor chip with the lead electrode; has a thermal stress relaxation body arranged between the semiconductor chip and a support electrode; has jointing members respectively placed between the thermal stress relaxation body and the semiconductor chip and between the thermal stress relaxation body and the support electrode, and makes the first thermal stress relaxation body connected to the support electrode; wherein the second thermal stress relaxation body is made from a material which has a thermal expansion coefficient in between the coefficients of the semiconductor chip and the lead electrode, and the first thermal stress relaxation body is made from a material which has a thermal expansion coefficient in between the coefficients of the semiconductor chip and the support electrode, and has a thermal conductivity of 50 to 300 W/(m·° C.).

    摘要翻译： 本发明提供一种通过降低存在于半导体元件和电极端子之间的接合构件上的最大温度并降低温度变化的范围而具有改善的耐温度变化的热疲劳寿命的半导体装置。 半导体装置具有放置在半导体芯片和引线电极之间的接合构件，以使接合构件将半导体芯片与引线电极接合; 具有布置在半导体芯片和支撑电极之间的热应力松弛体; 具有分别放置在热应力松弛体和半导体芯片之间以及热应力松弛体和支撑电极之间的接合构件，并使第一热应力松弛体与支撑电极连接; 其中所述第二热应力松弛体由半导体芯片和所述引线电极的系数之间的热膨胀系数的材料制成，并且所述第一热应力松弛体由具有热膨胀系数的材料制成 在半导体芯片和支撑电极的系数之间，并且具有50至300W /（m·℃）的热导率。