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    INDUCTOR AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    INDUCTOR AND METHOD OF MANUFACTURING THE SAME 有权
    电感器及其制造方法

    公开(公告)号：US20080143468A1

    公开(公告)日：2008-06-19

    申请号：US11957465

    申请日：2007-12-16

    申请人： Takeshi YOKOYAMA ,  Yoshikiyo USUI ,  Tomonori SEKI

    发明人： Takeshi YOKOYAMA ,  Yoshikiyo USUI ,  Tomonori SEKI

    IPC分类号： H01F30/06 ,  H01F41/00

    CPC分类号： H01F17/0033 ,  H01F1/342 ,  H01F27/292 ,  H01F41/046 ,  H01F2017/002 ,  Y10T29/4902

    摘要： An inductor and a method of manufacture results in external electrodes that prevent generation of flashes. The inductor has a ferrite substrate, external electrodes, and a coil. The cross-sectional area of the external electrodes extending across the cutting line is reduced to suppress generation of flashes during the cutting process. Pairs of through-holes are formed at positions in line symmetry about the cutting line. A connection conductor is formed in each of the through-holes, and the external electrodes are formed on the front and back surfaces of the substrate, with the connection conductor connecting each of the pairs of external electrodes on the front and back surfaces. Through-holes can be oblong holes extending across the cutting line, and the external electrodes can extend away from the cutting line.

    摘要翻译： 电感器和制造方法导致防止产生闪光的外部电极。 电感器具有铁氧体衬底，外部电极和线圈。 减少延伸穿过切割线的外部电极的横截面积，以抑制在切割过程中产生闪光。 成对的通孔形成在与切割线对称的位置处。 在每个通孔中形成连接导体，并且在基板的前表面和后表面上形成外部电极，其中连接导体在前表面和后表面上连接两对外部电极。 通孔可以是穿过切割线延伸的长孔，并且外部电极可以远离切割线延伸。

    SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体激光器件及其制造方法

    公开(公告)号：US20090086782A1

    公开(公告)日：2009-04-02

    申请号：US12235320

    申请日：2008-09-22

    申请人： Takeshi YOKOYAMA ,  Takayuki KASHIMA ,  Kouji MAKITA

    发明人： Takeshi YOKOYAMA ,  Takayuki KASHIMA ,  Kouji MAKITA

    IPC分类号： H01S5/026 ,  H01S5/20 ,  H01L21/02

    CPC分类号： H01S5/162 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/32316 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

    摘要： On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding layers 5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure 20 is formed so as to have a second lower cladding layer 13, a second active layer 14 with a second quantum well structure and a second upper cladding layer 15, 17, which are layered in this order, thereby forming a second resonator. End face coating films 31, 32 are formed on facets of the first and the second resonators, and a nitrogen-containing layer 30 is formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.

    摘要翻译： 在作为半导体基板1的一个主面的一部分的第一区域上，形成第一半导体激光结构体10，具有第一下部包层3，具有第一量子阱结构的第一有源层4和第一 上覆层5,7，其从半导体衬底侧依次层叠，从而形成第一谐振器。 在与第一区域不同的第二区域上形成第二半导体激光器结构20，以具有第二下部包层13，具有第二量子阱结构的第二有源层14和第二上部包层15， 17，其按顺序分层，从而形成第二谐振器。 端面涂膜31,32形成在第一和第二谐振器的小面上，并且在第一和第二谐振器的小面和小面涂膜之间形成含氮层30。 在具有单片形成的高输出双波长激光器的半导体激光装置中，能够抑制激光器的高输出运转时的COD电平的降低。