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公开(公告)号：US06756683B2
公开(公告)日：2004-06-29
申请号：US10122514
申请日：2002-04-15
IPC分类号： H01L2348
CPC分类号： H01L23/66 , H01L2224/16 , H01L2224/45144 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/19011 , H01L2924/00
摘要： A semiconductor device includes a silicon substrate with a resistivity being raised by diffusing Au etc. therein, and includes both active elements and passive elements. The active elements are all placed within a semiconductor chip, and the semiconductor chip is flip-chip mounted over the silicon substrate. Such a case where the silicon substrate is heated due to a heating process for forming the active elements can be avoided, and therefore, diffusion of Au etc. from the silicon substrate into the semiconductor device can be avoided.
摘要翻译： 半导体器件包括通过在其中扩散Au等而提高电阻率的硅衬底，并且包括有源元件和无源元件。 有源元件都放置在半导体芯片内，半导体芯片被倒装安装在硅衬底上。 可以避免由于用于形成有源元件的加热处理来加热硅衬底的情况，因此可以避免Au等从硅衬底扩散到半导体器件中。
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公开(公告)号：US5491512A
公开(公告)日：1996-02-13
申请号：US416437
申请日：1995-03-31
申请人： Keijirou Itakura , Toshihide Nobusada , Yasuyuki Toyoda , Yukio Saitoh , Noboru Kokusenya , Ryouichi Nagayoshi , Hironori Tanaka , Masayoshi Ozaki
发明人： Keijirou Itakura , Toshihide Nobusada , Yasuyuki Toyoda , Yukio Saitoh , Noboru Kokusenya , Ryouichi Nagayoshi , Hironori Tanaka , Masayoshi Ozaki
CPC分类号： H04N3/1562 , H04N3/1575
摘要： A solid state image sensor comprising a matrix of photosensitive elements adapted to accumulate signal charges corresponding to at least two different aspect ratios, a plurality of vertical shift registers disposed adjacent to columns of the photosensitive elements for a vertical transfer of the signal charges and a plurality of horizontal shift registers corresponding to the respective aspect ratios and disposed in parallel with each other for a horizontal transfer of the signal charges from the vertical shift registers. As a horizontal shift register exclusive to each aspect ratio is provided in the above manner, it is no longer necessary to superimpose the signal outputs of a plurality of buffer amplifiers so that a picture signal corresponding to the desired aspect ratio can be easily read out.
摘要翻译： 一种固态图像传感器，包括适于累积对应于至少两种不同宽高比的信号电荷的光敏元件的矩阵;多个垂直移位寄存器，其被设置为邻近所述感光元件的列，用于信号电荷的垂直传输;以及多个 的水平移位寄存器对应于各个纵横比并且彼此并联设置，用于水平传送来自垂直移位寄存器的信号电荷。 由于以上述方式提供了对每个宽高比排除的水平移位寄存器，所以不再需要叠加多个缓冲放大器的信号输出，使得可以容易地读出与期望的宽高比对应的图像信号。
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公开(公告)号：US5434437A
公开(公告)日：1995-07-18
申请号：US154352
申请日：1993-11-18
申请人： Keijirou Itakura , Toshihide Nobusada , Yasuyuki Toyoda , Yukio Saitoh , Noboru Kokusenya , Ryouichi Nagayoshi , Hironori Tanaka , Masayoshi Ozaki
发明人： Keijirou Itakura , Toshihide Nobusada , Yasuyuki Toyoda , Yukio Saitoh , Noboru Kokusenya , Ryouichi Nagayoshi , Hironori Tanaka , Masayoshi Ozaki
CPC分类号： H04N3/155 , H04N3/1531
摘要： The solid state image sensor of the invention comprises a plurality of photosensitive elements arranged in a matrix form, a vertical shift register disposed adjacent each column of the photosensitive elements and adapted to vertically transfer signal charges read from the corresponding photosensitive elements, a storage region for storing signal charges transferred by the vertical shift register and a horizontal shift register adapted to horizontally transfer signal charges read from the storage region, the above vertical shift register comprising units of 2n (n is a positive integer of not less than 3) transfer electrodes which are respectively independent.
摘要翻译： 本发明的固态图像传感器包括以矩阵形式布置的多个感光元件，垂直移位寄存器，其布置成邻近感光元件的每一列并且适于垂直传送从相应的感光元件读取的信号电荷， 存储由垂直移位寄存器传送的信号电荷和水平移位寄存器，水平移位寄存器适于水平传送从存储区读取的信号电荷，上述垂直移位寄存器包括2n（n为不小于3的正整数）的单位，转移电极 分别是独立的。
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公开(公告)号：US06379508B1
公开(公告)日：2002-04-30
申请号：US09268760
申请日：1999-03-16
IPC分类号： C23C1434
CPC分类号： C23C14/566 , C23C14/0036 , C23C14/56
摘要： A method for forming a thin film of the present invention includes the steps of performing sequentially first idling discharge under application of a first level of discharge power upon gas introduction (period t1a), intermediate idling discharge under application of a second level of discharge power lower than the first level (period t1b), and second idling discharge at the first level of discharge power (period t1c), so that the pressure of sputtering gas and an intermediate product produced during the idling discharge are stabilized. The discharge power is lowered to the second level, the shutter is opened, and an ITO thin film, for example, is formed on a first substrate (t2). Thereafter, the same cycles are repeated to form ITO thin films on substrates.
摘要翻译： 本发明的薄膜形成方法包括以下步骤：在施加第一放电电力时，在气体导入（周期t1a）时进行第一次怠速放电，在施加第二放电功率的情况下进行中间怠速放电 比第一电平（周期t1b）和第一放电功率级的第二怠速放电（周期t1c），使得在怠速放电期间产生的溅射气体和中间产物的压力稳定。 放电功率降低到第二水平，打开快门，并且例如在第一基板（t2）上形成ITO薄膜。 此后，重复相同的循环以在衬底上形成ITO薄膜。
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公开(公告)号：US6087272A
公开(公告)日：2000-07-11
申请号：US251290
申请日：1999-02-17
IPC分类号： H01L29/786 , H01L21/336 , H01L21/60 , H01L21/768 , H01L21/77 , H01L21/84 , H01L21/00
CPC分类号： H01L21/76895 , H01L24/11 , H01L27/1214 , H01L2224/13099 , H01L2224/45144 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079
摘要： On the surface of an insulating substrate 1 on which a transistor is formed, a first interlayer insulation film 8 is provided, and a first contact hole 9 and a metal interconnection layer 10 are formed. A second interlayer insulation film 11 is formed covering the above items, and a second contact hole 12 and a barrier metal 13 are formed. After a first hole 14 for bonding pad is formed, a third interlayer insulation film 15 is provided, and then a third contact hole 16 and a second hole 17 for bonding pad are formed. A transparent electro-conductive film 18 is formed covering the holes 14, 16 and 17. After that, a portion of the transparent electro-conductive film 18 locating above the holes 14, 17 for bonding pad is removed to have the metal interconnection layer 10 exposed. The exposed metal interconnection layer 10 is used as bonding pad 20. This contributes to reliable bonding of bonding wires onto the bonding pad.
摘要翻译： 在其上形成有晶体管的绝缘基板1的表面上，设置有第一层间绝缘膜8，并且形成第一接触孔9和金属互连层10。 形成覆盖上述物品的第二层间绝缘膜11，形成第二接触孔12和阻挡金属13。 在形成用于焊盘的第一孔14之后，设置第三层间绝缘膜15，然后形成用于焊盘的第三接触孔16和第二孔17。 形成覆盖孔14,16和17的透明导电膜18.此后，去除位于用于接合焊盘的孔14,17上方的透明导电膜18的一部分，以使金属互连层10 裸露。 暴露的金属互连层10用作接合焊盘20.这有助于将接合线可靠地接合到接合焊盘上。
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