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公开(公告)号：US06756683B2
公开(公告)日：2004-06-29
申请号：US10122514
申请日：2002-04-15
IPC分类号： H01L2348
CPC分类号： H01L23/66 , H01L2224/16 , H01L2224/45144 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/19011 , H01L2924/00
摘要： A semiconductor device includes a silicon substrate with a resistivity being raised by diffusing Au etc. therein, and includes both active elements and passive elements. The active elements are all placed within a semiconductor chip, and the semiconductor chip is flip-chip mounted over the silicon substrate. Such a case where the silicon substrate is heated due to a heating process for forming the active elements can be avoided, and therefore, diffusion of Au etc. from the silicon substrate into the semiconductor device can be avoided.
摘要翻译： 半导体器件包括通过在其中扩散Au等而提高电阻率的硅衬底，并且包括有源元件和无源元件。 有源元件都放置在半导体芯片内，半导体芯片被倒装安装在硅衬底上。 可以避免由于用于形成有源元件的加热处理来加热硅衬底的情况，因此可以避免Au等从硅衬底扩散到半导体器件中。
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公开(公告)号：US5319318A
公开(公告)日：1994-06-07
申请号：US931711
申请日：1992-08-18
摘要： A gain control circuit includes a first FET for serving as an active load, a second FET serving as an amplifier, and a third FET for serving as a current source. The first, second, and third FETs have substantially the same characteristics and are mutually connected in a series. The gain control circuit further includes a fourth FET for serving as a variable active load connected in parallel with the third FET and a capacitor connected between the third and fourth FETs. The fourth FET is also connected to a gain control terminal. The gain of the second FET is controlled by the voltage applied to the gate of the fourth FET through said gain control line.
摘要翻译： 增益控制电路包括用作有源负载的第一FET，用作放大器的第二FET和用作电流源的第三FET。 第一，第二和第三FET具有基本上相同的特性并且串联地相互连接。 增益控制电路还包括用作与第三FET并联连接的可变有源负载的第四FET和连接在第三和第四FET之间的电容器。 第四FET也连接到增益控制端子。 第二FET的增益由通过所述增益控制线施加到第四FET的栅极的电压来控制。
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公开(公告)号：US5210504A
公开(公告)日：1993-05-11
申请号：US851900
申请日：1992-03-16
申请人： Hideki Yagita , Tadayoshi Nakatsuka , Taketo Kunihisa , Michiaki Tsuneoka , Yukio Sakai , Kazuhiro Yahata
发明人： Hideki Yagita , Tadayoshi Nakatsuka , Taketo Kunihisa , Michiaki Tsuneoka , Yukio Sakai , Kazuhiro Yahata
CPC分类号： H03G1/007
摘要： A semiconductor device for a tuner capable of simultaneously satisfying a low noise factor, low third order distortion characteristics and low power consumption, and a tuner using this semiconductor device for a tuner and capable of reducing the size and eliminating labor during assembly. The semiconductor device is a variable gain amplification circuit comprising a gate grounded circuit using a transistor, and a differential amplification circuit including transistors and constant current sources. Transistors are used as variable resistance devices, and the gain of the gate grounded circuit can be varied by changing the gate voltage of a transistor. The gain of the differential amplification circuit can be varied by changing the gate voltage of another transistor. The overall gain of the circuit can be varied within a necessary range by simultaneously operating these gain controls, and the third order distortion can be improved monotonously with the decrease of the gain.
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公开(公告)号：US20110254927A1
公开(公告)日：2011-10-20
申请号：US13086261
申请日：2011-04-13
申请人： Kazuhiro Yahata , Takuya Kotani
发明人： Kazuhiro Yahata , Takuya Kotani
CPC分类号： H04N13/111 , G06T15/20 , H04N13/178 , H04N13/189 , H04N13/239 , H04N13/243 , H04N13/296 , H04N13/398
摘要： An image processing apparatus executes a distortion correction on coordinates of a target pixel in a virtual viewpoint image based on distortion characteristics of a virtual camera and calculates coordinates in the virtual viewpoint image after the distortion correction. The image process apparatus calculates ideal coordinates in a captured image from the coordinates in the virtual viewpoint image after the distortion correction and calculates real coordinates in the captured image from the ideal coordinates in the captured image based on distortion characteristics of an imaging unit. The image process apparatus calculates a pixel value corresponding to the real coordinates from image data of the virtual viewpoint image and corrects the pixel value corresponding to the real coordinates based on ambient light amount decrease characteristics of the imaging unit and ambient light amount decrease characteristics of the virtual camera.
摘要翻译： 图像处理装置基于虚拟摄像机的失真特性对虚拟视点图像中的目标像素的坐标进行失真校正，并计算失真校正后的虚拟视点图像中的坐标。 图像处理装置根据失真校正后的虚拟视点图像的坐标来计算拍摄图像中的理想坐标，并根据摄像单元的失真特性，根据拍摄图像中的理想坐标，计算拍摄图像中的实际坐标。 图像处理装置根据虚拟视点图像的图像数据计算与实际坐标相对应的像素值，并且基于成像单元的环境光量降低特性校正与实际坐标相对应的像素值，并且根据 虚拟相机。
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公开(公告)号：US07501068B2
公开(公告)日：2009-03-10
申请号：US11109864
申请日：2005-04-20
申请人： Atsuhiko Kanda , Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Atsuhiko Kanda , Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： C23F1/00
CPC分类号： H03H3/02 , H03H9/02102 , H03H9/173 , H03H9/174 , H03H9/175 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T156/10
摘要： A method for manufacturing a resonator of the present invention includes the steps of (a) forming a resonator film including a piezoelectric film made of piezoelectric material and (b) preparing a resonator substrate for supporting the resonator film. The method further comprises the step of (c) bonding the resonator film formed in the step (a) and the resonator substrate prepared in the step (b).
摘要翻译： 制造本发明的谐振器的方法包括以下步骤：（a）形成包括由压电材料制成的压电膜的谐振膜，（b）制备用于支撑谐振膜的谐振器基片。 该方法还包括以下步骤：（c）将步骤（a）中形成的谐振膜和步骤（b）中制备的谐振器基片接合。
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公开(公告)号：US20060145785A1
公开(公告)日：2006-07-06
申请号：US11322248
申请日：2006-01-03
申请人： Motonori Ishii , Kazuhiro Yahata , Naohiro Tsurumi
发明人： Motonori Ishii , Kazuhiro Yahata , Naohiro Tsurumi
IPC分类号： H03H9/54
CPC分类号： H03H9/175 , H03H3/02 , H03H9/02094 , H03H9/02149
摘要： A piezoelectric resonator includes a substrate, an acoustic mirror formed on the substrate and includes alternately stacked first acoustic mirror material layers and second acoustic mirror material layers having higher acoustic impedance than that of the first acoustic mirror material layers, a piezoelectric film formed on the acoustic mirror, a top electrode formed on the piezoelectric film and a bottom electrode formed below the piezoelectric film. A bonding interface is provided between metal films bonded to each other between the substrate and the piezoelectric film.
摘要翻译： 压电谐振器包括基板，形成在基板上的声镜，并且包括具有比第一声镜材料层高的声阻抗的交替堆叠的第一声镜材料层和第二声镜材料层，形成在声学上的压电膜 反射镜，形成在压电膜上的顶部电极和形成在压电膜下面的底部电极。 在基板和压电膜之间彼此结合的金属膜之间提供接合界面。
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公开(公告)号：US20060038636A1
公开(公告)日：2006-02-23
申请号：US11194460
申请日：2005-08-02
申请人： Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda , Atsuhiko Kanda
发明人： Naohiro Tsurumi , Kazuhiro Yahata , Yasuhiro Uemoto , Tsuyoshi Tanaka , Daisuke Ueda , Atsuhiko Kanda
IPC分类号： H03H9/58
CPC分类号： H03H9/173 , H03H3/04 , H03H9/172 , H03H9/564 , H03H2003/021
摘要： An acoustic resonator includes: a substrate; a resonator film which is supported above the main surface of the substrate and includes a piezoelectric film and a pair of a top electrode and a bottom electrode which are formed on part of the top surface and part of the bottom surface of the piezoelectric film, respectively, to face each other via the piezoelectric film; and a support which is formed on the main surface of the substrate to support the resonator film from below. A resonance cavity is provided in part of a region between the substrate and the resonator film below at least a portion of part of the resonator film where the top electrode and the bottom electrode coincide with each other and an isolation cavity is provided in other part of said region where the support and the resonance cavity do not exist.
摘要翻译： 声谐振器包括：基板; 一种谐振膜，其被支撑在基板的主表面上方，分别包括压电膜和一对顶电极和底电极，它们分别形成在压电膜的顶表面和底表面的一部分上 通过压电膜相互面对; 以及形成在基板的主表面上以从下方支撑谐振膜的支撑体。 谐振腔被设置在基板和谐振器膜之间的区域的一部分的下方，在谐振膜的至少一部分之上，其中顶部电极和底部电极彼此重合，并且在另一部分中设置隔离腔 所述区域不存在支撑和谐振腔。
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公开(公告)号：US08947166B2
公开(公告)日：2015-02-03
申请号：US13824425
申请日：2012-05-22
申请人： Takashi Uno , Hikaru Ikeda , Kazuhiro Yahata , Motoyoshi Iwata , Hiroshi Naitou , Tomohide Kamiyama
发明人： Takashi Uno , Hikaru Ikeda , Kazuhiro Yahata , Motoyoshi Iwata , Hiroshi Naitou , Tomohide Kamiyama
CPC分类号： H03F3/193 , H03F1/0205 , H03F1/565 , H03F3/601 , H03F2200/387 , H03F2200/423
摘要： A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees.
摘要翻译： 射频功率放大器包括：放大元件，其对输入信号进行放大并输出来自输出端子的信号; 以及输出负载电路，其包括连接到输出端子的第一谐振电路和第二谐振电路。 第一谐振电路的谐振频率高于输入信号的二次谐波的频率，第二谐振电路的谐振频率低于输入信号的三次谐波的频率。 输出负载电路具有从输出端看的阻抗，输入信号的二次谐波的反射系数的相位大于180度且小于360度，并且在三次谐波处的反射系数的相位 的输入信号大于0度且小于180度。
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公开(公告)号：US08558622B2
公开(公告)日：2013-10-15
申请号：US13379450
申请日：2010-07-09
申请人： Takashi Uno , Kazuhiro Yahata , Toshio Ishizaki
发明人： Takashi Uno , Kazuhiro Yahata , Toshio Ishizaki
IPC分类号： H03F3/191
CPC分类号： H03F3/245 , H03F1/32 , H03F1/3205 , H03F1/56 , H03F3/189 , H03F3/193 , H03F3/195 , H03F2200/108 , H03F2200/15 , H03F2200/18 , H03F2200/222 , H03F2200/387 , H03F2200/391 , H03F2200/423 , H03F2203/7215
摘要： A radio frequency power amplifier includes a transistor and amplifies a radio frequency signal of a first frequency; an input matching circuit connected to an input terminal of the transistor; and an output matching circuit connected to an output terminal of the transistor. A reactance control circuit includes one end connected to the output terminal of the transistor, and the other end connected to an input terminal of an output matching circuit and a bias terminal. The reactance control circuit has a reactance which resonates at a second frequency with a parasitic capacitance of the transistor at the output terminal of the transistor, and the second frequency is identical or close to the first frequency.
摘要翻译： 射频功率放大器包括晶体管，并放大第一频率的射频信号; 连接到晶体管的输入端的输入匹配电路; 以及连接到晶体管的输出端子的输出匹配电路。 电抗控制电路包括连接到晶体管的输出端的一端，另一端连接到输出匹配电路和偏置端的输入端。 电抗控制电路具有以第二频率与晶体管的输出端子处的晶体管的寄生电容谐振的电抗，第二频率与第一频率相同或接近。
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公开(公告)号：US20130176079A1
公开(公告)日：2013-07-11
申请号：US13824425
申请日：2012-05-22
申请人： Takashi Uno , Hikaru IKeda , Kazuhiro Yahata , Motoyoshi Iwata , Hiroshi Naitou , Tomohide Kamiyama
发明人： Takashi Uno , Hikaru IKeda , Kazuhiro Yahata , Motoyoshi Iwata , Hiroshi Naitou , Tomohide Kamiyama
IPC分类号： H03F3/193
CPC分类号： H03F3/193 , H03F1/0205 , H03F1/565 , H03F3/601 , H03F2200/387 , H03F2200/423
摘要： A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees.
摘要翻译： 射频功率放大器包括：放大元件，其对输入信号进行放大并输出来自输出端子的信号; 以及输出负载电路，其包括连接到输出端子的第一谐振电路和第二谐振电路。 第一谐振电路的谐振频率高于输入信号的二次谐波的频率，第二谐振电路的谐振频率低于输入信号的三次谐波的频率。 输出负载电路具有从输出端看的阻抗，输入信号的二次谐波的反射系数的相位大于180度且小于360度，并且在三次谐波处的反射系数的相位 的输入信号大于0度且小于180度。
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