公开(公告)号：US20120112201A1

公开(公告)日：2012-05-10

申请号：US12942437

申请日：2010-11-09

申请人： Takukazu OTSUKA ,  Keiji OKUMURA ,  Brian LYNN ROWDEN

发明人： Takukazu OTSUKA ,  Keiji OKUMURA ,  Brian LYNN ROWDEN

IPC分类号： H01L23/498 ,  B32B15/01 ,  B23K1/20 ,  H01L29/02 ,  H01L23/492

CPC分类号： B32B15/018 ,  B23K1/0016 ,  B23K35/0238 ,  B23K35/262 ,  B23K35/3006 ,  B23K2101/40 ,  H01L23/053 ,  H01L23/3735 ,  H01L23/488 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0655 ,  H01L2224/271 ,  H01L2224/2908 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29155 ,  H01L2224/32227 ,  H01L2224/32238 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48229 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83204 ,  H01L2224/83211 ,  H01L2224/83801 ,  H01L2224/83825 ,  H01L2224/85 ,  H01L2224/92147 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/3841 ,  Y10T428/12708 ,  H01L2924/01047 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A high melting point soldering layer includes a low melting point metal layer, a first high melting point metal layer disposed on a surface of the low melting point metal layer, and a second high melting point metal layer disposed at a back side of the low melting point metal layer. The low melting point metal layer, the first high melting point metal layer, and the second high melting point metal layer are mutually alloyed by transient liquid phase bonding, by annealing not less than a melting temperature of the low melting point metal layer, diffusing the metal of the low melting point metal layer into an alloy of the first high melting point metal layer and the second high melting point metal layer. The high melting point soldering layer has a higher melting point temperature than that of the low melting point metal layer. It is provided a binary based high melting point soldering layer having TLP bonding of a high melting point according to a low temperature processing, a fabrication method for the high melting point soldering layer and a semiconductor device to which the high melting point soldering layer is applied.

摘要翻译： 高熔点焊接层包括低熔点金属层，设置在低熔点金属层的表面上的第一高熔点金属层和设置在低熔点金属层的背面的第二高熔点金属层 点金属层。 低熔点金属层，第一高熔点金属层和第二高熔点金属层通过瞬态液相结合相互合金化，通过退火不低于低熔点金属层的熔融温度，将 低熔点金属层的金属成为第一高熔点金属层和第二高熔点金属层的合金。 高熔点焊接层的熔点温度高于低熔点金属层。 提供了一种基于低温处理的具有高熔点TLP键合的二元基高熔点焊接层，用于高熔点焊接层的制造方法和施加高熔点焊接层的半导体器件 。