公开(公告)号：US07364980B2

公开(公告)日：2008-04-29

申请号：US11539441

申请日：2006-10-06

申请人： Syouji Nogami ,  Tomonori Yamaoka ,  Shoichi Yamauchi ,  Hitoshi Yamaguchi ,  Takumi Shibata

发明人： Syouji Nogami ,  Tomonori Yamaoka ,  Shoichi Yamauchi ,  Hitoshi Yamaguchi ,  Takumi Shibata

IPC分类号： H01L21/76

CPC分类号： C30B25/165 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/0634

摘要： Closure at the opening of a trench with an epitaxial film is restrained, and thereby, filling morphology in the trenches is improved. A method for manufacturing a semiconductor substrate includes a step for growing an epitaxial layer 11 on the surface of a silicon substrate 13, a step of forming a trench 14 in this epitaxial layer, and a step of filling the inside of the trench 14 with the epitaxial film 12, wherein mixed gas made by mixing halogenoid gas into silicon source gas is circulated as material gas in filling the inside of the trench with the epitaxial film, and when the standard flow rate of the halogenoid gas is defined as Xslm and the film formation speed of the epitaxial film formed by the circulation of the silicon source gas is defined as Yμm/min, in the case when the aspect ratio of the trench is less than 10, an expression Y

摘要翻译： 在具有外延膜的沟槽的开口处的闭合被抑制，从而提高了沟槽中的填充形态。 一种制造半导体衬底的方法包括在硅衬底13的表面上生长外延层11的步骤，在该外延层中形成沟槽14的步骤，以及将沟槽14内部填充的步骤 外延膜12，其中通过将卤素气体混入硅源气体而制成的混合气体作为原料气体循环，用外延膜填充沟槽内部，当将卤化物气体的标准流量定义为Xslm时，膜 通过硅源气体的循环形成的外延膜的形成速度定义为Ymum / min，在沟槽的纵横比小于10的情况下，满足表达式Y <0.2X + 0.10，在 沟槽的纵横比在10以上且小于20的情况下，满足表达式Y <0.2X + 0.05，在沟槽的纵横比为20以上的情况下，表达式Y <0.2× 满意

公开(公告)号：US20070082455A1

公开(公告)日：2007-04-12

申请号：US11539441

申请日：2006-10-06

申请人： Syouji NOGAMI ,  Tomonori Yamaoka ,  Shoichi Yamauchi ,  Hitoshi Yamaguchi ,  Takumi Shibata

发明人： Syouji NOGAMI ,  Tomonori Yamaoka ,  Shoichi Yamauchi ,  Hitoshi Yamaguchi ,  Takumi Shibata

IPC分类号： H01L21/76

CPC分类号： C30B25/165 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/0634

摘要： Closure at the opening of a trench with an epitaxial film is restrained, and thereby, filling morphology in the trenches is improved. A method for manufacturing a semiconductor substrate includes a step for growing an epitaxial layer 11 on the surface of a silicon substrate 13, a step of forming a trench 14 in this epitaxial layer, and a step of filling the inside of the trench 14 with the epitaxial film 12, wherein mixed gas made by mixing halogenoid gas into silicon source gas is circulated as material gas in filling the inside of the trench with the epitaxial film, and when the standard flow rate of the halogenoid gas is defined as Xslm and the film formation speed of the epitaxial film formed by the circulation of the silicon source gas is defined as Yμm/min, in the case when the aspect ratio of the trench is less than 10, an expression Y

摘要翻译： 在具有外延膜的沟槽的开口处的闭合被抑制，从而提高了沟槽中的填充形态。 一种制造半导体衬底的方法包括在硅衬底13的表面上生长外延层11的步骤，在该外延层中形成沟槽14的步骤，以及将沟槽14内部填充的步骤 外延膜12，其中通过将卤素气体混入硅源气体而制成的混合气体作为原料气体循环，用外延膜填充沟槽内部，当将卤化物气体的标准流量定义为Xslm时，膜 通过硅源气体的循环形成的外延膜的形成速度定义为Ymum / min，在沟槽的纵横比小于10的情况下，满足表达式Y <0.2X + 0.10，在 沟槽的纵横比在10以上且小于20的情况下，满足表达式Y <0.2X + 0.05，在沟槽的纵横比为20以上的情况下，表达式Y <0.2× 满意

公开(公告)号：US07811907B2

公开(公告)日：2010-10-12

申请号：US11528678

申请日：2006-09-28

申请人： Takumi Shibata ,  Shoichi Yamauchi ,  Tomonori Yamaoka ,  Syouji Nogami

发明人： Takumi Shibata ,  Shoichi Yamauchi ,  Tomonori Yamaoka ,  Syouji Nogami

IPC分类号： H01L29/78 ,  H01L29/12 ,  H01L21/336 ,  H01L21/205

CPC分类号： H01L29/7813 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/66734 ,  H01L29/7811

摘要： A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film. The step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film. The second growth rate is larger than the first growth rate.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在硅衬底的主表面上形成沟槽; 在主表面和沟槽中形成第一外延膜; 以及在所述第一外延膜上形成第二外延膜。 形成第一外延膜的步骤具有第一外延膜的第一生长速率的第一工艺条件。 形成第二外延膜的步骤具有第二外延膜的第二生长速率的第二工艺条件。 第二增长率大于第一增长率。

公开(公告)号：US20070072397A1

公开(公告)日：2007-03-29

申请号：US11526879

申请日：2006-09-26

申请人： Shoichi Yamauchi ,  Takumi Shibata ,  Tomonori Yamaoka ,  Syouji Nogami

发明人： Shoichi Yamauchi ,  Takumi Shibata ,  Tomonori Yamaoka ,  Syouji Nogami

IPC分类号： H01L21/20

CPC分类号： H01L29/66712 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02639 ,  H01L21/823487 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/7811 ,  H01L29/7813

摘要： A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as α. The second epitaxial film has an impurity concentration defined as β. The arsenic concentration and the impurity concentration has a relationship of: α≦3×33 109×ln(β)−1×1021.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在硅衬底上形成第一外延膜; 在所述第一外延膜中形成沟槽; 以及在所述第一外延膜和所述沟槽中形成第二外延膜。 形成第二外延膜的步骤包括使用硅源气体和卤化物气体的混合气体的最后步骤。 硅衬底的砷浓度定义为α。 第二外延膜具有定义为β的杂质浓度。 砷浓度和杂质浓度具有以下关系：α<= 3×33×10×（β）-1×10 21。

公开(公告)号：US07642178B2

公开(公告)日：2010-01-05

申请号：US11526879

申请日：2006-09-26

申请人： Shoichi Yamauchi ,  Takumi Shibata ,  Tomonori Yamaoka ,  Syouji Nogami

发明人： Shoichi Yamauchi ,  Takumi Shibata ,  Tomonori Yamaoka ,  Syouji Nogami

IPC分类号： H01L21/00

CPC分类号： H01L29/66712 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02639 ,  H01L21/823487 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/7811 ,  H01L29/7813

摘要： A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as α. The second epitaxial film has an impurity concentration defined as β. The arsenic concentration and the impurity concentration has a relationship of: α≦3×1019×ln(β)−1×1021.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在硅衬底上形成第一外延膜; 在所述第一外延膜中形成沟槽; 以及在所述第一外延膜和所述沟槽中形成第二外延膜。 形成第二外延膜的步骤包括使用硅源气体和卤化物气体的混合气体的最后步骤。 硅衬底的砷浓度定义为α。 第二外延膜具有定义为β的杂质浓度。 砷浓度和杂质浓度具有以下关系：α<= 3×10 19×ln（β）-1×10 21。

公开(公告)号：US20070072398A1

公开(公告)日：2007-03-29

申请号：US11528678

申请日：2006-09-28

申请人： Takumi Shibata ,  Shoichi Yamauchi ,  Tomonori Yamaoka ,  Syouji Nogami

发明人： Takumi Shibata ,  Shoichi Yamauchi ,  Tomonori Yamaoka ,  Syouji Nogami

IPC分类号： H01L21/20

CPC分类号： H01L29/7813 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/66734 ,  H01L29/7811

摘要： A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film. The step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film. The second growth rate is larger than the first growth rate.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在硅衬底的主表面上形成沟槽; 在主表面和沟槽中形成第一外延膜; 以及在所述第一外延膜上形成第二外延膜。 形成第一外延膜的步骤具有第一外延膜的第一生长速率的第一工艺条件。 形成第二外延膜的步骤具有第二外延膜的第二生长速率的第二工艺条件。 第二增长率大于第一增长率。

公开(公告)号：US20080303114A1

公开(公告)日：2008-12-11

申请号：US12155485

申请日：2008-06-05

申请人： Takumi Shibata ,  Shouichi Yamauchi ,  Syouji Nogami ,  Tomonori Yamaoka

发明人： Takumi Shibata ,  Shouichi Yamauchi ,  Syouji Nogami ,  Tomonori Yamaoka

IPC分类号： H01L29/06 ,  H01L21/761

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66734

摘要： A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type columns, which are alternately arranged. Each column has a tapered shape. A portion of the first conductivity type column located around the substrate has a smaller impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. A portion of the second conductivity type column located around the substrate has a larger impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer.

摘要翻译： 提供了一种半导体器件，其包括衬底; 设置在所述基板上的P-N列层; 设置在P-N柱层上的第二导电型外延层。 P-N柱层包括交替排列的第一导电型列和第二导电型列。 每列都有锥形。 位于基板周围的第一导电型列的一部分具有比位于第二导电型外延层周围的第一导电型列的另一部分更小的杂质浓度。 位于基板周围的第二导电型列的一部分具有比位于第二导电型外延层周围的第一导电型列的另一部分更大的杂质浓度。

公开(公告)号：US08097511B2

公开(公告)日：2012-01-17

申请号：US12155485

申请日：2008-06-05

申请人： Takumi Shibata ,  Shouichi Yamauchi ,  Syouji Nogami ,  Tomonori Yamaoka

发明人： Takumi Shibata ,  Shouichi Yamauchi ,  Syouji Nogami ,  Tomonori Yamaoka

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66734

摘要： A semiconductor device is provided, which includes a substrate; a P-N column layer disposed on the substrate; a second conductivity type epitaxial layer disposed on the P-N column layer. The P-N column layer includes first conductivity type columns and second conductivity type columns, which are alternately arranged. Each column has a tapered shape. A portion of the first conductivity type column located around the substrate has a smaller impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer. A portion of the second conductivity type column located around the substrate has a larger impurity concentration than another portion of the first conductivity type column located around the second conductivity type epitaxial layer.

摘要翻译： 提供了一种半导体器件，其包括衬底; 设置在所述基板上的P-N列层; 设置在P-N柱层上的第二导电型外延层。 P-N柱层包括交替排列的第一导电型列和第二导电型列。 每列都有锥形。 位于基板周围的第一导电型列的一部分具有比位于第二导电型外延层周围的第一导电型列的另一部分更小的杂质浓度。 位于基板周围的第二导电型列的一部分具有比位于第二导电型外延层周围的第一导电型列的另一部分更大的杂质浓度。

公开(公告)号：US08501598B2

公开(公告)日：2013-08-06

申请号：US13258268

申请日：2010-03-25

申请人： Syouji Nogami ,  Hitoshi Goto ,  Takumi Shibata ,  Tsuyoshi Yamamoto

发明人： Syouji Nogami ,  Hitoshi Goto ,  Takumi Shibata ,  Tsuyoshi Yamamoto

IPC分类号： H01L21/20 ,  H01L29/06

CPC分类号： H01L29/7813 ,  H01L21/02381 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66734

摘要： A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The method of producing this semiconductor substrate is provided with: a first epitaxial layer forming step (S1) of forming a first epitaxial layer; a trench forming step (S2) of forming trenches in the first epitaxial layer; and epitaxial layer forming steps (S3, S4, S5) of forming epitaxial layers on the first epitaxial layer and inside the trenches, using a plurality of growth conditions including differing growth rates, so as to fill the trenches, and keeping the concentration of dopant taken into the epitaxial layers constant in the plurality of growth conditions.

摘要翻译： 允许更容易获得所需电特性的半导体衬底及其半导体器件，以及制造半导体衬底的方法。 制造该半导体基板的方法具有：形成第一外延层的第一外延层形成工序（S1） 在第一外延层中形成沟槽的沟槽形成步骤（S2）; 以及外延层形成步骤（S3，S4，S5），其使用包括不同生长速率的多个生长条件在第一外延层和沟槽内部形成外延层，以便填充沟槽，并保持掺杂剂的浓度 在多个生长条件下被吸收到外延层中。

公开(公告)号：US20120032312A1

公开(公告)日：2012-02-09

申请号：US13258268

申请日：2010-03-25

申请人： Syouji Nogami ,  Hitoshi Goto ,  Takumi Shibata ,  Tsuyoshi Yamamoto

发明人： Syouji Nogami ,  Hitoshi Goto ,  Takumi Shibata ,  Tsuyoshi Yamamoto

IPC分类号： H01L29/02 ,  H01L21/20

CPC分类号： H01L29/7813 ,  H01L21/02381 ,  H01L21/02494 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66734

摘要： A semiconductor substrate which allows desired electrical characteristics to be more easily acquired, a semiconductor device of the same, and a method of producing the semiconductor substrate. The method of producing this semiconductor substrate is provided with: a first epitaxial layer forming step (S1) of forming a first epitaxial layer; a trench forming step (S2) of forming trenches in the first epitaxial layer; and epitaxial layer forming steps (S3, S4, S5) of forming epitaxial layers on the first epitaxial layer and inside the trenches, using a plurality of growth conditions including differing growth rates, so as to fill the trenches, and keeping the concentration of dopant taken into the epitaxial layers constant in the plurality of growth conditions.

摘要翻译： 允许更容易获得所需电特性的半导体衬底及其半导体器件，以及制造半导体衬底的方法。 制造该半导体基板的方法具有：形成第一外延层的第一外延层形成工序（S1） 在第一外延层中形成沟槽的沟槽形成步骤（S2）; 以及外延层形成步骤（S3，S4，S5），其使用包括不同生长速率的多个生长条件在第一外延层和沟槽内部形成外延层，以便填充沟槽，并保持掺杂剂的浓度 在多个生长条件下被吸收到外延层中。