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    ORGANIC THIN FILM TRANSISTOR AND ACTIVE MATRIX DISPLAY
    1.
    发明申请
    ORGANIC THIN FILM TRANSISTOR AND ACTIVE MATRIX DISPLAY 审中-公开
    有机薄膜晶体管和有源矩阵显示

    公开(公告)号：US20090050879A1

    公开(公告)日：2009-02-26

    申请号：US11914032

    申请日：2006-05-09

    申请人： Takumi Yamaga ,  Hidenori Tomono ,  Ikue Kawashima

    发明人： Takumi Yamaga ,  Hidenori Tomono ,  Ikue Kawashima

    IPC分类号： H01L51/05

    CPC分类号： H01L51/102 ,  H01L27/3244 ,  H01L51/0012 ,  H01L51/0022 ,  H01L51/0037 ,  H01L51/0545

    摘要： An organic thin film transistor is disclosed. The organic thin film transistor includes a substrate, a gate electrode , a gate insulating film , a source electrode on the gate insulating film, a drain electrode on the gate insulating film at an interval with the source electrode, and an organic semiconductor layer. The gate insulating film includes an electrode formation region having surface energy modified by energy deposition, one or more corners of the electrode formation region has an obtuse-angled shape, and the source electrode and/or the drain electrode is formed in the electrode formation region so as to have substantially the same corner shape as the electrode formation region having the obtuse-angled shaped corners.

    摘要翻译： 公开了一种有机薄膜晶体管。 有机薄膜晶体管包括基板，栅极电极，栅极绝缘膜，栅极绝缘膜上的源电极，栅极绝缘膜上的与源极电极间隔的漏电极和有机半导体层。 栅绝缘膜包括具有通过能量沉积改性的表面能的电极形成区域，电极形成区域的一个或多个拐角具有钝角形状，并且源电极和/或漏电极形成在电极形成区域中 以具有与具有钝角形状的角部的电极形成区域基本相同的拐角形状。

    Optical path element, optical switching element, spatial light modulator and image display apparatus
    3.
    发明授权
    Optical path element, optical switching element, spatial light modulator and image display apparatus 失效
    光路元件，光开关元件，空间光调制器和图像显示装置

    公开(公告)号：US06707514B2

    公开(公告)日：2004-03-16

    申请号：US10098414

    申请日：2002-03-18

    申请人： Hitoshi Kondoh ,  Hidenori Tomono ,  Ikue Kawashima

    发明人： Hitoshi Kondoh ,  Hidenori Tomono ,  Ikue Kawashima

    IPC分类号： G02F11335

    CPC分类号： G02F1/315 ,  G02F1/133371 ,  G02F1/1334

    摘要： An optical switching element, comprising a light transmitting element, a reflection substrate, and index variable material. The light transmitting element has a first light incident surface, a second light incident surface not parallel to the first light incident surface, and a light outgoing surface. The reflection substrate is arranged opposite to the second light incident surface and has a reflection surface with an angle that is not parallel to the second light incident surface, wherein a reflected light passes through the light transmitting element and the reflection substrate and then is reflected by the reflection surface. The index variable material is sandwiched between the light transmitting element and the reflection substrate and has an index of refraction varied according to an external signal. By varying the index of refraction of the index variable material, an angle formed by the reflected light and a normal line of the light outgoing surface is changed such that the emitting direction of the reflected light is changed.

    摘要翻译： 一种光开关元件，包括透光元件，反射基板和折射率可变材料。 透光元件具有第一光入射面，与第一光入射面不平行的第二光入射面和光出射面。 反射基板与第二光入射面相对配置，具有与第二光入射面不平行的角度的反射面，反射光通过透光元件和反射基板，然后被反射基板反射 反射面。 折射率可变材料夹在光透射元件和反射基板之间，并且具有根据外部信号而变化的折射率。 通过改变折射率可变材料的折射率，改变由反射光和光出射面的法线形成的角度，使得反射光的发射方向改变。

    Organic transistor, organic transistor array, and display device
    4.
    发明授权
    Organic transistor, organic transistor array, and display device 有权
    有机晶体管，有机晶体管阵列和显示器件

    公开(公告)号：US08207528B2

    公开(公告)日：2012-06-26

    申请号：US12670325

    申请日：2008-10-17

    申请人： Keiichiro Yutani ,  Hidenori Tomono ,  Takumi Yamaga

    发明人： Keiichiro Yutani ,  Hidenori Tomono ,  Takumi Yamaga

    IPC分类号： H01L35/24

    CPC分类号： H01L51/0015 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0558

    摘要： An organic transistor includes a substrate; a gate electrode and a gate insulating film sequentially formed on the substrate in the stated order; and a source electrode, a drain electrode, and an organic semiconductor layer formed on at least the gate insulating film. Ultraviolet light is radiated to the substrate from a side without the gate electrode, transmitted through the substrate and the gate insulating film, reflected at the gate electrode, and absorbed at the organic semiconductor layer. Conductivity of the organic semiconductor layer that has absorbed the ultraviolet light is lower than that of the organic semiconductor layer that has not absorbed the ultraviolet light.

    摘要翻译： 有机晶体管包括基板; 栅极电极和栅极绝缘膜，按顺序形成在基板上; 以及形成在至少栅极绝缘膜上的源电极，漏电极和有机半导体层。 紫外光从没有栅电极的一侧辐射到基板，透过基板和栅极绝缘膜，在栅电极处被反射并在有机半导体层被吸收。 吸收了紫外线的有机半导体层的电导率低于未吸收紫外线的有机半导体层的电导率。

    Organic transistor active substrate, manufacturing method thereof, and electrophoretic display
    5.
    发明授权
    Organic transistor active substrate, manufacturing method thereof, and electrophoretic display 有权
    有机晶体管有源基板，其制造方法和电泳显示器

    公开(公告)号：US08071432B2

    公开(公告)日：2011-12-06

    申请号：US11517737

    申请日：2006-09-07

    申请人： Yoshikazu Akiyama ,  Takumi Yamaga ,  Takanori Tano ,  Hidenori Tomono ,  Akishige Murakami ,  Hitoshi Arita ,  Mayuka Araumi

    发明人： Yoshikazu Akiyama ,  Takumi Yamaga ,  Takanori Tano ,  Hidenori Tomono ,  Akishige Murakami ,  Hitoshi Arita ,  Mayuka Araumi

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L51/0021 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0022

    摘要： A method of manufacturing an organic transistor active substrate is disclosed. The organic transistor active substrate includes an organic transistor in which a first electrode is formed on a substrate, a first insulating film is formed on the first electrode, a pair of second electrodes is formed on the first insulating film, and an active layer made of an organic semiconductor material is formed on the pair of second electrodes. The organic transistor is laminated with a second insulating film, and the second insulating film is laminated with a third electrode which is electrically coupled to one of the second electrodes via a through-hole provided through the second insulating film. The first electrode is formed by inkjet ejection; the first insulating film is formed by coating; the pair of second electrodes is formed by inkjet ejection; the active layer is formed by inkjet ejection; the second insulating film is formed by screen printing; and the third electrode is formed by screen printing.

    摘要翻译： 公开了制造有机晶体管有源衬底的方法。 有机晶体管有源基板包括其中第一电极形成在基板上的有机晶体管，在第一电极上形成第一绝缘膜，在第一绝缘膜上形成一对第二电极，并且在第一绝缘膜上形成有源层， 在一对第二电极上形成有机半导体材料。 有机晶体管与第二绝缘膜层压，并且第二绝缘膜与通过第二绝缘膜提供的通孔电耦合到第二电极之一的第三电极层叠。 第一电极通过喷墨喷射形成; 第一绝缘膜通过涂布形成; 该一对第二电极通过喷墨喷射形成; 活性层通过喷墨喷射形成; 第二绝缘膜通过丝网印刷形成; 并且第三电极通过丝网印刷形成。

    ORGANIC TRANSISTOR, ORGANIC TRANSISTOR ARRAY, AND DISPLAY DEVICE
    7.
    发明申请
    ORGANIC TRANSISTOR, ORGANIC TRANSISTOR ARRAY, AND DISPLAY DEVICE 有权
    有机晶体管，有机晶体管阵列和显示器件

    公开(公告)号：US20100193775A1

    公开(公告)日：2010-08-05

    申请号：US12670325

    申请日：2007-10-17

    申请人： Keiichiro Yutani ,  Hidenori Tomono ,  Takumi Yamaga

    发明人： Keiichiro Yutani ,  Hidenori Tomono ,  Takumi Yamaga

    IPC分类号： H01L51/50 ,  H01L51/10

    CPC分类号： H01L51/0015 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0022 ,  H01L51/0558

    摘要： An organic transistor includes a substrate; a gate electrode and a gate insulating film sequentially formed on the substrate in the stated order; and a source electrode, a drain electrode, and an organic semiconductor layer formed on at least the gate insulating film. Ultraviolet light is radiated to the substrate from a side without the gate electrode, transmitted through the substrate and the gate insulating film, reflected at the gate electrode, and absorbed at the organic semiconductor layer. Conductivity of the organic semiconductor layer that has absorbed the ultraviolet light is lower than that of the organic semiconductor layer that has not absorbed the ultraviolet light.

    摘要翻译： 有机晶体管包括基板; 栅极电极和栅极绝缘膜，按顺序形成在基板上; 以及形成在至少栅极绝缘膜上的源电极，漏电极和有机半导体层。 紫外光从没有栅电极的一侧辐射到基板，透过基板和栅极绝缘膜，在栅电极处被反射并在有机半导体层被吸收。 吸收了紫外线的有机半导体层的电导率低于未吸收紫外线的有机半导体层的电导率。