-
公开(公告)号：US20070262761A1
公开(公告)日：2007-11-15
申请号：US11621664
申请日：2007-01-10
申请人： Takuya ISHIGAKI , Takashi Sase , Akihiko Kanouda , Koji Kateno , Ryotaro Kudo
发明人： Takuya ISHIGAKI , Takashi Sase , Akihiko Kanouda , Koji Kateno , Ryotaro Kudo
IPC分类号： G05F1/46
CPC分类号： H02M3/156 , H02M2001/0009
摘要： In a switching power supply apparatus for performing a switching control of a power MOS transistor that flows current to a coil and converting input voltage into output voltage, even if there occurs offset voltage in a current sensing operational amplifier, source potential of a current sensing MOS transistor is precisely kept at source potential of a low side power MOS transistor. For example, an offset cancel capacitor is arranged at an inverting input terminal of the current sensing operational amplifier, and voltage in the direction to offset the offset voltage occurring in the operational amplifier is charged to this capacitor.
摘要翻译： 在用于对电流流向线圈并将输入电压转换为输出电压的功率MOS晶体管的开关控制的开关电源装置中，即使在电流感测运算放大器中发生偏移电压，电流感测MOS的源极电位 晶体管被精确地保持在低边功率MOS晶体管的源极电位。 例如，偏移消除电容器被布置在电流感测运算放大器的反相输入端子处，并且将在运算放大器中发生的偏移电压偏移的方向上的电压充电到该电容器。
-
公开(公告)号：US07138786B2
公开(公告)日：2006-11-21
申请号：US11287293
申请日：2005-11-28
申请人： Takuya Ishigaki , Takashi Sase , Akihiko Kanouda , Koji Tateno , Ryotaro Kudo
发明人： Takuya Ishigaki , Takashi Sase , Akihiko Kanouda , Koji Tateno , Ryotaro Kudo
IPC分类号： G05F1/613
CPC分类号： H02M3/1588 , H02M2001/0009 , Y02B70/1466
摘要： A power supply driver circuit with low power losses and desired response characteristics with respect to changes in output and its miniaturization is provided. In a driver IC constituting a switched-mode power supply equipment controlling the switching, by pulse width modulation, of first and second power transistors passing a current in a coil, and outputting a voltage bucked or boosted from an input voltage, current sensing with desired responsiveness is enabled by providing a switching transistor between an inverted input terminal and a non-inverted input terminal of an operational amplifier, preventing, while the second power transistor is ON, the generation of a potential which is undefined when first power transistor is ON, i.e. when the second power transistor is OFF, and maintaining a node potential in a state in which the potential is well defined.
-
公开(公告)号：US07385380B2
公开(公告)日：2008-06-10
申请号：US11621664
申请日：2007-01-10
申请人： Takuya Ishigaki , Takashi Sase , Akihiko Kanouda , Koji Tateno , Ryotaro Kudo
发明人： Takuya Ishigaki , Takashi Sase , Akihiko Kanouda , Koji Tateno , Ryotaro Kudo
CPC分类号： H02M3/156 , H02M2001/0009
摘要： In a switching power supply apparatus for performing a switching control of a power MOS transistor that flows current to a coil and converting input voltage into output voltage, even if there occurs offset voltage in a current sensing operational amplifier, source potential of a current sensing MOS transistor is precisely kept at source potential of a low side power MOS transistor. For example, an offset cancel capacitor is arranged at an inverting input terminal of the current sensing operational amplifier, and voltage in the direction to offset the offset voltage occurring in the operational amplifier is charged to this capacitor.
摘要翻译： 在用于对电流流向线圈并将输入电压转换为输出电压的功率MOS晶体管的开关控制的开关电源装置中，即使在电流感测运算放大器中发生偏移电压，电流感测MOS的源极电位 晶体管被精确地保持在低边功率MOS晶体管的源极电位。 例如，偏移消除电容器被布置在电流感测运算放大器的反相输入端子处，并且将在运算放大器中发生的偏移电压偏移的方向上的电压充电到该电容器。
-
公开(公告)号：US20060113979A1
公开(公告)日：2006-06-01
申请号：US11287293
申请日：2005-11-28
申请人： Takuya Ishigaki , Takashi Sase , Akihiko Kanouda , Koji Tateno , Ryotaro Kudo
发明人： Takuya Ishigaki , Takashi Sase , Akihiko Kanouda , Koji Tateno , Ryotaro Kudo
CPC分类号： H02M3/1588 , H02M2001/0009 , Y02B70/1466
摘要： A power supply driver circuit with low power losses and desired response characteristics with respect to changes in output and its miniaturization is provided. In a driver IC constituting a switched-mode power supply equipment controlling the switching, by pulse width modulation, of first and second power transistors passing a current in a coil, and outputting a voltage bucked or boosted from an input voltage, current sensing with desired responsiveness is enabled by providing a switching transistor between an inverted input terminal and a non-inverted input terminal of an operational amplifier, preventing, while the second power transistor is ON, the generation of a potential which is undefined when first power transistor is ON, i.e. when the second power transistor is OFF, and maintaining a node potential in a state in which the potential is well defined.
摘要翻译： 提供了一种具有低功率损耗和相对于输出变化及其小型化所需的响应特性的电源驱动电路。 在构成开关模式电源设备的驱动器IC中，通过脉冲宽度调制来控制通过线圈中的电流的第一和第二功率晶体管的输出，并输出从输入电压降压或升压的电压， 通过在运算放大器的反相输入端和非反相输入端之间设置开关晶体管来实现响应，防止当第二功率晶体管导通时产生当第一功率晶体管导通时未定义的电位， 即当第二功率晶体管截止时，并且将节点电位维持在其中电势良好定义的状态。
-
公开(公告)号：US07403365B2
公开(公告)日：2008-07-22
申请号：US11505821
申请日：2006-08-18
IPC分类号： H02H9/08
CPC分类号： H02M1/32 , H02M3/156 , H02M2001/0009
摘要： An over-current detection circuit using the ON-voltage of a main MOSFET is provided, which is resistant to process variations of a main MOSFET and is not easily influenced by switching noise. Separately from a main MOSFET (Q1), a sense MOSFET (Q3) whose size is 1/m of the main MOSFET is provided and it is caused to be normally on. A DC ON-voltage generated when a current that is 1/m of an over-current value is caused to flow through the sense MOSFET is obtained as a reference voltage for over-current setting. The ON-voltage when the main MOSFET is on is sampled and held, and it is obtained as a DC voltage. These DC voltages are compared in a comparator (COMP).
摘要翻译： 提供了使用主MOSFET的导通电压的过电流检测电路，其抵抗主MOSFET的工艺变化，并且不容易受到开关噪声的影响。 与主MOSFET（Q1）分开，提供尺寸为主MOSFET的1 / m的感测MOSFET（Q 3），并使其正常导通。 获得当使过电流值为1 / m的电流通过感测MOSFET流过时产生的直流导通电压作为过电流设定的基准电压。 主MOSFET导通时的导通电压进行采样保持，作为直流电压获得。 在比较器（COMP）中比较这些直流电压。
-
公开(公告)号：US20070188958A1
公开(公告)日：2007-08-16
申请号：US11505821
申请日：2006-08-18
CPC分类号： H02M1/32 , H02M3/156 , H02M2001/0009
摘要： An over-current detection circuit using the ON-voltage of a main MOSFET is provided, which is resistant to process variations of a main MOSFET and is not easily influenced by switching noise. Separately from a main MOSFET (Q1), a sense MOSFET (Q3) whose size is 1/m of the main MOSFET is provided and it is caused to be normally on. A DC ON-voltage generated when a current that is 1/m of an over-current value is caused to flow through the sense MOSFET is obtained as a reference voltage for over-current setting. The ON-voltage when the main MOSFET is on is sampled and held, and it is obtained as a DC voltage. These DC voltages are compared in a comparator (COMP).
摘要翻译： 提供了使用主MOSFET的导通电压的过电流检测电路，其抵抗主MOSFET的工艺变化，并且不容易受到开关噪声的影响。 与主MOSFET（Q1）分开，提供尺寸为主MOSFET的1 / m的感测MOSFET（Q 3），并使其正常导通。 获得当使过电流值为1 / m的电流通过感测MOSFET流过时产生的直流导通电压作为过电流设定的基准电压。 主MOSFET导通时的导通电压进行采样保持，作为直流电压获得。 在比较器（COMP）中比较这些直流电压。
-
公开(公告)号：US20050237039A1
公开(公告)日：2005-10-27
申请号：US10524087
申请日：2003-08-08
申请人： Mutsumi Kikuchi , Noboru Akiyama , Hiroyuki Shoji , Fumio Murabayashi , Akihiko Kanouda , Takashi Sase , Koji Tateno
发明人： Mutsumi Kikuchi , Noboru Akiyama , Hiroyuki Shoji , Fumio Murabayashi , Akihiko Kanouda , Takashi Sase , Koji Tateno
CPC分类号： G11C5/147 , H01L27/0688 , H01L27/08 , H02M3/156 , H02M2001/007
摘要： A semiconductor device capable of achieving downsizing without reducing the power supply efficiency and capable of reducing switching noises and a memory card using the same are disclosed. The device comprises a plurality of stages of voltage booster circuits for potentially raising a power supply voltage up to a final output voltage, a voltage control unit for controlling an output voltage at a nearby location of the final stage, and one or more internal elements to which the final output voltage is supplied. A primary voltage booster circuit at the first stage includes an inductance element, a switching element, a diode and a driver circuit. At a metal core part of the inductance element, a metal wiring line is used, which was formed by use of a fabrication process of semiconductor integrated circuits, while employing for its core part an inter-wiring layer dielectric film that was formed using the fabrication process. In addition, the switching element and the diode are arranged so that portions thereof are disposed beneath the inductance element.
摘要翻译： 公开了能够实现小型化而不降低电源效率并且能够降低开关噪声的半导体器件和使用其的存储卡。 该装置包括用于潜在地提高最终输出电压的电源电压的多级升压电路，用于控制最后级的附近位置处的输出电压的电压控制单元和一个或多个内部元件 其提供最终输出电压。 第一级的初级升压电路包括电感元件，开关元件，二极管和驱动器电路。 在电感元件的金属芯部分，使用通过使用半导体集成电路的制造工艺形成的金属布线，同时使用其核心部分使用该制造形成的布线层电介质膜 处理。 此外，开关元件和二极管被布置成使得其部分设置在电感元件下方。
-
公开(公告)号：US20050127886A1
公开(公告)日：2005-06-16
申请号：US11043086
申请日：2005-01-27
CPC分类号： H02M3/1584 , H02M3/1588 , H02M3/33507 , Y02B70/1466
摘要： A step-down type DC-DC power supply device implements both the stabilization of the control loop and the responsibility at the same time. In the power-supply device, an output power signal is fed back to an error amplifier after having passed through a CR smoothing filter provided independently of a power LC smoothing filter. Also, independently of the duty controls over Power MOSFETs, i.e., upper-side/lower-side semiconductor switching components in the steady state, an output from the power LC smoothing filter is added to an upper and lower limit-mode-equipped control circuit, thereby, at the transient state, forcefully setting the duty α at either 0% or 100%.
摘要翻译： 降压型DC-DC电源装置同时实现控制回路的稳定和责任。 在电源装置中，在通过独立于功率LC平滑滤波器设置的CR平滑滤波器之后，输出功率信号被反馈到误差放大器。 而且，独立于功率MOSFET的占空比控制，即处于稳定状态的上侧/下侧半导体开关元件，来自功率LC平滑滤波器的输出被加到上限和下限模式配置的控制电路 因此，在瞬态状态下，强制将占空比α设置为0％或100％。
-
公开(公告)号：US06798180B2
公开(公告)日：2004-09-28
申请号：US10462680
申请日：2003-06-17
IPC分类号： G05F1575
CPC分类号： H02M3/1584 , H02M3/1588 , H02M3/33507 , Y02B70/1466
摘要： A step-down type DC—DC power-supply device implements both the stabilization of the control loop and the responsibility at the same time. In the power-supply device, an output power signal is fed back to an error amplifier after having passed through a CR smoothing filter provided independently of a power LC smoothing filter. Also, independently of the duty controls over Power MOSFETs, i.e., upper-side/lower-side semiconductor switching components in the steady state, an output from the power LC smoothing filter is added to an upper and lower limit-mode-equipped control circuit, thereby, at the transient state, forcefully setting the duty &agr; at either 0% or 100%.
摘要翻译： 降压型DC-DC电源装置同时实现控制回路的稳定和责任。 在电源装置中，在通过独立于功率LC平滑滤波器设置的CR平滑滤波器之后，输出功率信号被反馈到误差放大器。 而且，独立于功率MOSFET的占空比控制，即处于稳定状态的上侧/下侧半导体开关元件，来自功率LC平滑滤波器的输出被加到上限和下限模式配置的控制电路 因此，在瞬态状态下，强制将占空比α设置为0％或100％。
-
10.发明授权公开(公告)号：US08605464B2
公开(公告)日：2013-12-10
申请号：US13591264
申请日：2012-08-22
申请人： Takashi Sase , Akihiko Kanouda , Yosuke Tsuyuki , Hiroyuki Shoji
发明人： Takashi Sase , Akihiko Kanouda , Yosuke Tsuyuki , Hiroyuki Shoji
IPC分类号： H02M3/335
CPC分类号： H02M1/4258 , H02M2001/0064 , Y02B70/126
摘要： A power converter includes a first inductor, a rectifier arm, a first switch arm including a first and second switch circuits, a second switch arm including a third switch circuit and a first capacitor, a LC serial circuit, a Transformer, a rectification and smoothing circuit connected to secondary winding of the transformer, and a control circuit to perform on-off control of the three switch circuits. The rectifier arm, the first and second switch arms and the LC serial circuit are connected in parallel with each other. The LC serial circuit and primary winding of the transformer are connected. AC power supply is connected to the rectifier arm via the first inductor. The control circuit includes an output voltage control circuit to control output voltage at specific setting value, an intermediate voltage control circuit to control intermediate voltage at specific setting value, and a power factor correction control circuit.
摘要翻译： 电力转换器包括第一电感器，整流器臂，包括第一和第二开关电路的第一开关臂，包括第三开关电路和第一电容器的第二开关臂，LC串联电路，变压器，整流和平滑 连接到变压器的次级绕组的电路，以及用于执行三个开关电路的开关控制的控制电路。 整流臂，第一和第二开关臂和LC串联电路彼此并联连接。 变压器的LC串联电路和初级绕组连接。 交流电源通过第一电感连接到整流臂。 控制电路包括用于以特定设定值控制输出电压的输出电压控制电路，以特定设定值控制中间电压的中间电压控制电路和功率因数校正控制电路。
-
-
-
-
-
-
-
-
-
搜索结果
103 条记录 (耗时 0.029 秒)
