摘要:
A variable-capacitance element includes: a first electrode and a second electrode which are fixed on a substrate with a spacing; a movable electrode; an actuator which is supported on a supporting portion provided on the substrate to drive the movable electrode. The movable electrode is put in an electrically connecting state with the second electrode, when the movable electrode is driven to a first position by the actuator, and the movable electrode is put in an electrically non-connected state with the second electrode, when the movable electrode is driven to a second position by the actuator. The movable electrode is constituted to be always put in an electrically non-connected state with the first electrode.
摘要:
A semiconductor device having a surface MEMS element, includes a semiconductor substrate, and an actuator which is arranged above the semiconductor substrate via a space and has a lower electrode, an upper electrode, and a piezoelectric layer sandwiched between the lower electrode and the upper electrode, at least an entire surface of the piezoelectric layer being substantially flat.
摘要:
A variable-capacitance element includes: a first electrode and a second electrode which are fixed on a substrate with a spacing; a movable electrode; an actuator which is supported on a supporting portion provided on the substrate to drive the movable electrode. The movable electrode is put in an electrically connecting state with the second electrode, when the movable electrode is driven to a first position by the actuator, and the movable electrode is put in an electrically non-connected state with the second electrode, when the movable electrode is driven to a second position by the actuator. The movable electrode is constituted to be always put in an electrically non-connected state with the first electrode.
摘要:
A semiconductor device having a surface MEMS element, includes a semiconductor substrate, and an actuator which is arranged above the semiconductor substrate via a space and has a lower electrode, an upper electrode, and a piezoelectric layer sandwiched between the lower electrode and the upper electrode, at least an entire surface of the piezoelectric layer being substantially flat.
摘要:
According to one embodiment, a semiconductor device includes an electrostatic actuator including first and second lower electrodes, an upper electrode, and an insulating film provided between the upper electrode and the first and second lower electrodes, the first lower electrode and upper electrode configuring a first variable capacitance element, the second lower electrode and upper electrode configuring a second variable capacitance element, a first fixed capacitance element connected to the first lower electrode, a second fixed capacitance element connected to the second lower electrode, and a detection circuit connected to the upper electrode and configured to detect a charge amount stored in the insulating film.
摘要:
According to one embodiment, an electrostatic actuator apparatus includes a first voltage generation circuit configured to generate a first voltage, a first switch connected between the first voltage generation circuit and a first node, a second voltage generation circuit configured to generate a second voltage, a second switch connected between the second voltage generation circuit and a second node, a capacitor connected between the first node and the second node, an electrostatic actuator having a drive electrode connected to the first node, and a control circuit configured to perform an operation of sequentially turning on the first switch, turning off the first switch and turning on the second switch when the electrostatic actuator is driven.
摘要:
A plurality of capacitors each of which has a first and a second electrode. A plurality of first switches is connected between the first electrodes of the plurality of capacitors and a first power supply. A plurality of second switches is connected between the second electrodes of the plurality of capacitors and a second power supply. A plurality of resistances each of which is connected between the first electrode of one of the plurality of capacitors and the second electrode of another capacitor and which connect the plurality of capacitors in series, a voltage for driving an actuator being output from the last stage of the plurality of capacitors connected in series.
摘要:
A semiconductor device of this invention includes a first circuit for initializing a predetermined circuit in accordance with the level of a power source voltage, a second circuit for controlling the output from the first circuit by activation or deactivation, and an activation control circuit for activating or deactivating the second circuit in accordance with external input.
摘要:
A device with a beam structure includes a substrate, an anchor and a cavity which are provided on and over the substrate, respectively, and a beam structure which is provided on the anchor and over the cavity, extends in a first direction and includes a plurality of convex portions and a plurality of concave portions, each of the convex portions having such a stress gradient as to provide a convex warp, and each of the concave portions having such a stress gradient as to provide a concave warp. The convex portions and the concave portions are alternately repeatedly arranged.
摘要:
A non-volatile semiconductor memory device includes a memory cell array having a plurality of non-volatile memory cells, a decode circuit configured to decode address data as input thereto to select a memory cell from the memory cell array, and a data sense circuit configured to detect and amplify the data of the selected memory cell of the memory cell array. The memory cell array includes an initial setup data region with initial setup data and status data being programmed thereinto. The initial setup data is used for determination of memory operating conditions, and the status data indicates whether the initial setup data region is presently normal or not in functionality.