公开(公告)号：US07575983B2

公开(公告)日：2009-08-18

申请号：US11256399

申请日：2005-10-19

申请人： Tarng-Shiang Hu ,  Jing-Yi Yan ,  Jia-Chong Ho ,  Cheng-Chung Lee

发明人： Tarng-Shiang Hu ,  Jing-Yi Yan ,  Jia-Chong Ho ,  Cheng-Chung Lee

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/2007 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549 ,  Y10T29/4913

摘要： A method for fabricating a device with flexible substrate includes providing a rigid substrate. Then, a flexible substrate layer is directly formed on the rigid substrate, wherein the flexible substrate layer fully contacts the rigid substrate and a contact interface is formed. A device structure is formed on the flexible substrate layer. Alternatively, an interfacing layer can be formed on the rigid substrate and then the flexible substrate layer is directly formed on the interfacing layer. Thus, the flexible substrate layer can be stripped from the rigid substrate under a condition substantially without stress.

摘要翻译： 用于制造具有柔性衬底的器件的方法包括提供刚性衬底。 然后，柔性衬底层直接形成在刚性衬底上，其中柔性衬底层完全接触刚性衬底并形成接触界面。 在柔性基板层上形成器件结构。 或者，可以在刚性衬底上形成界面层，然后在界面层上直接形成柔性衬底层。 因此，可以在基本上没有应力的条件下从刚性基板剥离柔性基板层。

公开(公告)号：US07939425B2

公开(公告)日：2011-05-10

申请号：US12497297

申请日：2009-07-02

申请人： Tarng-Shiang Hu ,  Jing-Yi Yan ,  Jia-Chong Ho ,  Cheng-Chung Lee

发明人： Tarng-Shiang Hu ,  Jing-Yi Yan ,  Jia-Chong Ho ,  Cheng-Chung Lee

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/2007 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549 ,  Y10T29/4913

摘要： A method for fabricating a device with a flexible substrate includes providing a rigid substrate at first. Next, an interfacing layer can be formed on the rigid substrate, and then a flexible substrate is directly formed on the interfacing layer. The flexible substrate fully contacts the interfacing layer. A device structure is then formed on the flexible substrate.

摘要翻译： 用于制造具有柔性衬底的器件的方法包括首先提供刚性衬底。 接下来，可以在刚性基板上形成接合层，然后在接合层上直接形成柔性基板。 柔性基底完全接触界面层。 然后在柔性基板上形成器件结构。

公开(公告)号：US20070054440A1

公开(公告)日：2007-03-08

申请号：US11256399

申请日：2005-10-19

申请人： Tarng-Shiang Hu ,  Jing-Yi Yan ,  Jia-Chong Ho ,  Cheng-Chung Lee

发明人： Tarng-Shiang Hu ,  Jing-Yi Yan ,  Jia-Chong Ho ,  Cheng-Chung Lee

IPC分类号： H01L21/8232 ,  H01L21/335

CPC分类号： H01L21/2007 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549 ,  Y10T29/4913

摘要： A method for fabricating a device with flexible substrate includes providing a rigid substrate. Then, a flexible substrate layer is directly formed on the rigid substrate, wherein the flexible substrate layer fully contacts the rigid substrate and a contact interface is formed. A device structure is formed on the flexible substrate layer. Alternatively, an interfacing layer can be formed on the rigid substrate and then the flexible substrate layer is directly formed on the interfacing layer. Thus, the flexible substrate layer can be stripped from the rigid substrate under a condition substantially without stress.

摘要翻译： 用于制造具有柔性衬底的器件的方法包括提供刚性衬底。 然后，柔性衬底层直接形成在刚性衬底上，其中柔性衬底层完全接触刚性衬底并形成接触界面。 在柔性基板层上形成器件结构。 或者，可以在刚性衬底上形成界面层，然后在界面层上直接形成柔性衬底层。 因此，可以在基本上没有应力的条件下从刚性基板剥离柔性基板层。

公开(公告)号：US20070161149A1

公开(公告)日：2007-07-12

申请号：US11554576

申请日：2006-10-30

申请人： Tsung-Hsien Lin ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee

发明人： Tsung-Hsien Lin ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee

IPC分类号： H01L51/40

CPC分类号： H01L51/5253 ,  H01L51/525 ,  H01L2251/5338

摘要： A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; fabricating a patterned spacing layer on the flexible substrate; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.

摘要翻译： 提供了一种有机电子器件的制造方法。 该方法包括：提供柔性基底; 在柔性基板上制造多个有机元件; 在柔性基板上制造图案化间隔层; 以及在图案化的间隔层上布置盖基板，并用密封剂密封柔性基板和盖基板的边缘，其中图案化的间隔层用于保持柔性基板和盖基板之间的空间。

公开(公告)号：US20060079038A1

公开(公告)日：2006-04-13

申请号：US11131387

申请日：2005-05-18

申请人： Tarng-Shiang Hu ,  Jia-Chong Ho ,  Liang-Ying Huang ,  Cheng-Chung Lee

发明人： Tarng-Shiang Hu ,  Jia-Chong Ho ,  Liang-Ying Huang ,  Cheng-Chung Lee

IPC分类号： H01L21/84

CPC分类号： H01L27/285 ,  H01L51/0021

摘要： A method of fabricating an electronic device includes the following steps: a) providing a substrate; b) forming a first strip on the substrate; c) coating an insulation layer on the first strip and the substrate while completely overlaying the first strip and the substrate with the same; d) forming a second strip on the insulation layer; e) forming conductive polymer on the insulation layer while completely overlaying the second strip with the same; f) etching the conductive polymer via plasma etching for completely removing the conductive polymer on the second strip; and g) forming a semiconductor layer on the second strip and the conductive polymer.

摘要翻译： 一种制造电子器件的方法包括以下步骤：a）提供衬底; b）在衬底上形成第一条带; c）在第一条带和基板上涂覆绝缘层，同时完全覆盖第一条带和基板; d）在所述绝缘层上形成第二条带; e）在绝缘层上形成导电聚合物，同时完全覆盖第二条带; f）通过等离子体蚀刻蚀刻导电聚合物，以完全去除第二条带上的导电聚合物; 以及g）在所述第二条带和所述导电聚合物上形成半导体层。

公开(公告)号：US07635608B2

公开(公告)日：2009-12-22

申请号：US11554576

申请日：2006-10-30

申请人： Tsung-Hsien Lin ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee

发明人： Tsung-Hsien Lin ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee

IPC分类号： H01L21/00 ,  H01L51/40

CPC分类号： H01L51/5253 ,  H01L51/525 ,  H01L2251/5338

摘要： A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; fabricating a patterned spacing layer on the flexible substrate; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.

摘要翻译： 提供了一种有机电子器件的制造方法。 该方法包括：提供柔性基底; 在柔性基板上制造多个有机元件; 在柔性基板上制造图案化间隔层; 以及在图案化的间隔层上布置盖基板，并用密封剂密封柔性基板和盖基板的边缘，其中图案化的间隔层用于保持柔性基板和盖基板之间的空间。

公开(公告)号：US07495253B2

公开(公告)日：2009-02-24

申请号：US11878907

申请日：2007-07-27

申请人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

发明人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

IPC分类号： H01L51/10

CPC分类号： H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

摘要翻译： 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

公开(公告)号：US20050227407A1

公开(公告)日：2005-10-13

申请号：US10863212

申请日：2004-06-09

申请人： Cheng-Chung Hsieh ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee ,  Liang-Ying Huang ,  Wei-Ling Lin ,  Wen-Kuei Huang

发明人： Cheng-Chung Hsieh ,  Jia-Chong Ho ,  Tarng-Shiang Hu ,  Cheng-Chung Lee ,  Liang-Ying Huang ,  Wei-Ling Lin ,  Wen-Kuei Huang

IPC分类号： H01L29/786 ,  H01L21/312 ,  H01L21/336 ,  H01L51/05 ,  H01L51/10 ,  H01L51/40 ,  H01L51/52

CPC分类号： H01L51/107 ,  H01L51/0545 ,  H01L51/5237

摘要： The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.

摘要翻译： 本发明公开了一种有机薄膜晶体管的多钝化层结构及其制造方法，其特征在于，在有机薄膜晶体管上进行旋涂，注入印刷，丝网印刷和微接触。 一种有机薄膜晶体管的多钝化层结构，包括：基板; 形成在所述基板上的栅极层; 形成在所述基板和所述栅极层上的绝缘体层; 形成在所述绝缘体层上的电极层; 形成在绝缘体层和电极层上的半导体层; 以及形成在半导体层和电极层上的钝化层，从而形成有机薄膜晶体管的多钝化层结构。

公开(公告)号：US20050194615A1

公开(公告)日：2005-09-08

申请号：US10840637

申请日：2004-05-07

申请人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

发明人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

IPC分类号： H01L29/417 ,  H01L21/336 ,  H01L29/745 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/40

CPC分类号： H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

摘要翻译： 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

公开(公告)号：US07264989B2

公开(公告)日：2007-09-04

申请号：US10840637

申请日：2004-05-07

申请人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

发明人： Liang-Ying Huang ,  Jia-Chong Ho ,  Cheng-Chung Lee ,  Tarng-Shiang Hu ,  Wen-Kuei Huang ,  Wei-Ling Lin ,  Cheng-Chung Hsieh

IPC分类号： H01L51/40 ,  H01L21/84

CPC分类号： H01L51/0022 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

摘要翻译： 对有机薄膜晶体管及其制造方法进行说明。 该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。 在半导体层上丝网印刷电极层，在电极层上涂布钝化层。 通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带 在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。 由此，得到具有顶接触/底栅结构的有机薄膜晶体管。