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公开(公告)号：US20070044823A1
公开(公告)日：2007-03-01
申请号：US11509737
申请日：2006-08-25
申请人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
发明人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
IPC分类号： B08B3/02
CPC分类号： H01L21/67051
摘要： A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction. The cleaning liquid poured out onto the surface of the substrate through the cleaning liquid pouring nozzle is restrained from flowing by a liquid damming member held at a height equal to or lower than that of the nozzle exit of the cleaning liquid pouring nozzle to collect a mass of the cleaning liquid. A high centrifugal force acts on the mass of the cleaning liquid to force the mass of the cleaning liquid to flow outward even if the substrate is rotated at a low rotating speed.
摘要翻译： 基板清洁装置和基板清洗方法减少了残留在基板上的液滴，以防止由于基板上残留液滴或水痕而导致的加热过程对基板的不规则加热。 将清洗液通过清洗液注入喷嘴注入到基板的表面上，使清洗液注入的区域从基板的中心部朝向圆周方向移动。 在衬底表面上的相对于衬底的旋转方向倾倒有清洁液体的区域之后的区域处，径向向外喷射气体。 气体迫使在基板表面流动的清洗液体的液膜在圆周方向和径向向外的方向上流动。 清洗液通过清洗液倒出嘴倾倒在基材表面上被限制在保持在与清洗液注入嘴的喷嘴出口相同或更小的高度的液体阻塞构件的流动中，从而收集质量 的清洗液。 即使基板以低转速旋转，高离心力作用在清洁液体上，以迫使清洁液体的质量向外流出。
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公开(公告)号：US08037890B2
公开(公告)日：2011-10-18
申请号：US11509737
申请日：2006-08-25
申请人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
发明人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
IPC分类号： B08B3/00
CPC分类号： H01L21/67051
摘要： A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction.
摘要翻译： 基板清洁装置和基板清洗方法减少了残留在基板上的液滴，以防止由于基板上残留液滴或水痕而导致的加热过程对基板的不规则加热。 将清洗液通过清洗液注入喷嘴注入到基板的表面上，使清洗液注入的区域从基板的中心部朝向圆周方向移动。 在衬底表面上的相对于衬底的旋转方向倾倒有清洁液体的区域之后的区域处，径向向外喷射气体。 气体迫使在基板表面流动的清洗液体的液膜在圆周方向和径向向外的方向上流动。
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公开(公告)号：US20120006362A1
公开(公告)日：2012-01-12
申请号：US13240830
申请日：2011-09-22
申请人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
发明人： Taro Yamamoto , Hideharu Kyouda , Tetsu Kawasaki , Satoru Shimura
CPC分类号： H01L21/67051
摘要： A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction.
摘要翻译： 基板清洁装置和基板清洗方法减少了残留在基板上的液滴，以防止由于基板上残留液滴或水痕而导致的加热过程对基板的不规则加热。 将清洗液通过清洗液注入喷嘴注入到基板的表面上，使清洗液注入的区域从基板的中心部朝向圆周方向移动。 在衬底表面上的相对于衬底的旋转方向倾倒有清洁液体的区域之后的区域处，径向向外喷射气体。 气体迫使在基板表面流动的清洗液体的液膜在圆周方向和径向向外的方向上流动。
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4.发明授权公开(公告)号：US08111372B2
公开(公告)日：2012-02-07
申请号：US12515368
申请日：2007-11-19
申请人： Hideharu Kyouda , Junichi Kitano , Taro Yamamoto
发明人： Hideharu Kyouda , Junichi Kitano , Taro Yamamoto
IPC分类号： H01L21/66
CPC分类号： G03F7/70958 , G03F7/70341 , G03F7/70991 , H01L21/6715
摘要： A coating film forming apparatus for immersion light exposure includes one or more coating units configured to apply a resist film or a resist film and an additional film onto a substrate, one or more thermally processing units configured to perform a thermal process, a defect eliciting unit configured to perform a process for eliciting a latent defect of a coating film at an edge portion of the substrate, a checking unit configured to check a state of the coating film after the process by the defect eliciting unit, a control section configured to use a check result obtained by the checking unit to make a judgment of the state of the coating film and permit transfer of the substrate to the light exposure apparatus, and a cleaning unit configured to perform cleaning on the substrate before the process by the defect eliciting unit.
摘要翻译： 用于浸没曝光的涂膜形成装置包括一个或多个涂覆单元，其被配置为将抗蚀剂膜或抗蚀剂膜和附加膜施加到基板上，一个或多个热处理单元，被配置为执行热处理，缺陷引出单元 被配置为执行用于在所述基板的边缘部分处引导涂膜的潜在缺陷的处理，所述检查单元被配置为在所述缺陷引出单元处理之后检查所述涂膜的状态;控制部，被配置为使用 由检查单元获得的检查结果以判断涂膜的状态并允许将基板转移到曝光装置;以及清洁单元，被配置为在由缺陷引出单元进行处理之前在基板上进行清洁。
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公开(公告)号：US07823534B2
公开(公告)日：2010-11-02
申请号：US10584264
申请日：2004-12-24
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译： 显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液 被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。 喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。 此外，可以减少基板上的显影液的厚度，从而可以节省显影液。
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6.发明申请公开(公告)号：US20050053874A1
公开(公告)日：2005-03-10
申请号：US10943840
申请日：2004-09-20
申请人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
发明人： Kousuke Yoshihara , Keiichi Tanaka , Taro Yamamoto , Hideharu Kyouda , Hirofumi Takeguchi , Atsushi Ookouchi
IPC分类号： G03D3/06 , G03F7/30 , H01L21/00 , H01L21/027 , G03C5/18
CPC分类号： H01L21/6715 , G03D3/06 , G03F7/3021
摘要： In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.
摘要翻译： 在其上形成的显影液中的溶解速度低的抗蚀剂膜的显影处理中，首先将低浓度的显影液供给到晶片上，并将晶片放置在 规定的时间以允许显影反应进行，然后进一步提供浓度高于首先提供的显影溶液的显影溶液的显影溶液到晶片上，使基板静置并随后冲洗晶片，由此提高均匀性 晶片的中心部分和周边部分的线宽度。
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公开(公告)号：US08026048B2
公开(公告)日：2011-09-27
申请号：US12877612
申请日：2010-09-08
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译： 显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液 被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。 喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。 此外，可以减少基板上的显影液的厚度，从而可以节省显影液。
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8.发明申请公开(公告)号：US20100073647A1
公开(公告)日：2010-03-25
申请号：US12515368
申请日：2007-11-19
申请人： Hideharu Kyouda , Junichi Kitano , Taro Yamamoto
发明人： Hideharu Kyouda , Junichi Kitano , Taro Yamamoto
CPC分类号： G03F7/70958 , G03F7/70341 , G03F7/70991 , H01L21/6715
摘要： A coating film forming apparatus for immersion light exposure, for forming a coating film including a resist film or a resist film and an additional film on a substrate to be fed to an immersion light exposure apparatus configured to perform a light exposure process through a liquid, includes: one or more coating units configured to apply the resist film or the resist film and the additional film onto the substrate; one or more thermally processing units configured to perform a thermal process necessary for forming the coating film on the substrate; a checking unit configured to check a state of the coating film at an edge portion of the substrate before the immersion light exposure; and a control section configured to use a check result obtained by the checking unit to make a judgment of whether or not the state of the coating film at the edge portion of the substrate is within an acceptable range, and to permit transfer of the substrate to the light exposure apparatus when the state of the coating film is within the acceptable range.
摘要翻译： 一种用于浸没曝光的涂膜形成装置，用于在被配置为通过液体进行曝光处理的浸没曝光装置的基板上形成包括抗蚀剂膜或抗蚀剂膜和附加膜的涂膜， 包括：被配置为将抗蚀剂膜或抗蚀剂膜和附加膜施加到基底上的一个或多个涂层单元; 一个或多个热处理单元，被配置为执行在基板上形成涂膜所需的热处理; 检查单元，被配置为在浸没曝光之前检查在所述基板的边缘部分处的所述涂膜的状态; 以及控制部，被配置为使用由所述检查单元获得的检查结果来判断在所述基板的边缘部分处的所述涂膜的状态是否在可接受的范围内，并且允许将所述基板转印到 当涂膜的状态在可接受的范围内时的曝光装置。
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公开(公告)号：US20080124489A1
公开(公告)日：2008-05-29
申请号：US11944557
申请日：2007-11-23
申请人： Taro Yamamoto , Yasushi Takiguchi , Akihiro Fujimoto , Hideharu Kyouda , Junichi Kitano , Osamu Miyahara , Kenji Tsutsumi
发明人： Taro Yamamoto , Yasushi Takiguchi , Akihiro Fujimoto , Hideharu Kyouda , Junichi Kitano , Osamu Miyahara , Kenji Tsutsumi
CPC分类号： H01L21/6715 , H01L21/67178 , H01L21/67276
摘要： A coating film forming apparatus includes a process section including one or more coating units and one or more thermally processing units; a pre-coating cleaning unit configured to perform cleaning on a back surface and an edge portion of a substrate; and a pre-coating check unit configured to check a state of a back surface and an edge portion of the substrate. A control section is configured to realize a sequence of cleaning the substrate by the pre-coating cleaning unit, checking the substrate by the pre-coating check unit, making a judgment based on a check result thus obtained of whether or not a state of particles on a back surface and an edge portion of the substrate is within an acceptable range, and permitting transfer of the substrate into the process section where the state of particles is within the acceptable range.
摘要翻译： 涂膜形成装置包括具有一个或多个涂布单元和一个或多个热处理单元的处理部分; 构造成在基板的背面和边缘部分上进行清洗的预涂层清洁单元; 以及配置为检查基板的背面和边缘部分的状态的预涂层检查单元。 控制部被配置为通过预涂清洁单元实现清洁基板的顺序，通过预涂单元检查基板，基于由此获得的检查结果判断颗粒的状态 在基板的后表面和边缘部分处于可接受的范围内，并且允许将基板转移到颗粒状态在可接受范围内的处理部分中。
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公开(公告)号：US20090130614A1
公开(公告)日：2009-05-21
申请号：US10584264
申请日：2004-12-24
CPC分类号： H01L21/67051 , G03F7/3021 , H01L21/6708 , H01L21/6715 , H01L21/6719 , Y10S134/902
摘要： A developer nozzle is moved from a periphery of a wafer toward the central portion while an exposed substrate held at a spin chuck is being rotated about a vertical axis and while a developing solution is being discharged from the developer nozzle, and this way the developing solution is supplied to the surface of the wafer, the developer nozzle having a slit-like ejection port whose longitudinal direction is oriented to the direction perpendicular to the radial direction of the wafer. The movement speed of the nozzle is higher than a case where a nozzle with a small-diameter circular nozzle is used, and this enables a development time to be reduced. Further, the thickness of a developing solution on a substrate can be reduced, so that the developing solution can be saved.
摘要翻译： 显影剂喷嘴从晶片的周边朝向中心部分移动，同时保持在旋转卡盘处的暴露的基板围绕垂直轴线旋转并且显影液从显影剂喷嘴排出，并且以这种方式，显影液 被提供到晶片的表面，显影剂喷嘴具有狭缝状喷射口，其纵向方向定向为垂直于晶片的径向的方向。 喷嘴的移动速度高于使用具有小直径圆形喷嘴的喷嘴的情况，这使得能够减少显影时间。 此外，可以减少基板上的显影液的厚度，从而可以节省显影液。
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