公开(公告)号：US5709757A

公开(公告)日：1998-01-20

申请号：US518980

申请日：1995-08-24

申请人： Tatsuo Hatano ,  Seishi Murakami ,  Kunihiro Tada

发明人： Tatsuo Hatano ,  Seishi Murakami ,  Kunihiro Tada

IPC分类号： H01L21/302 ,  B08B7/00 ,  C23C16/44 ,  H01L21/00 ,  H01L21/205 ,  H01L21/304 ,  H01L21/3065 ,  B08B3/10

CPC分类号： H01L21/67028 ,  B08B7/00 ,  C23C16/4405 ,  Y10S438/905

摘要： A film forming apparatus having a dry cleaning function comprises a process chamber for containing an object to be processed, a process gas supply system for introducing into the process chamber a process gas for forming one of a metal film or a metal compound film on the object, a heating device for depositing a component of the process gas on the object, thereby forming a film, a cleaning gas supply system for introducing into the process chamber a cleaning gas containing nitrogen trichloride or a fluoride such as chlorine trifluoride or nitrogen trifluoride for cleaning one of a metal or a metal compound adhering to an inner part of the process chamber due to the film formation, and an after-treatment gas supply system for introducing into the process chamber a cleaning after-treatment gas containing an alcohol.

摘要翻译： 具有干洗功能的成膜装置包括用于容纳待处理物体的处理室，将处理室内引入用于在物体上形成金属膜或金属化合物膜之一的处理气体的处理气体供给系统 用于将处理气体的成分沉积在物体上，从而形成膜的加热装置，用于将含有三氯化氮或氟化物如三氟化氯或三氟化氮的清洁气体引入处理室的清洁气体供给系统用于清洁 由于成膜而附着在处理室的内部的金属或金属化合物之一，以及用于将含有醇的清洁后处理气体引入处理室的后处理气体供给系统。

公开(公告)号：US08106335B2

公开(公告)日：2012-01-31

申请号：US11631485

申请日：2005-07-01

申请人： Seishi Murakami ,  Kunihiro Tada

发明人： Seishi Murakami ,  Kunihiro Tada

IPC分类号： H05B3/68

CPC分类号： C23C16/46 ,  C23C16/4586 ,  H01L21/67109 ,  H05B3/143

摘要： A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).

摘要翻译： 处理装置具有防止由于嵌入式加热器的加热而产生裂缝的放置台。 其上放置晶片（W）的放置台（32A）具有多个区域（32Aa，32Ab），使得多个加热器中的一个独立地嵌入在多个区域中的每个区域中。 嵌入在相邻区域的一个区域（32Aa）中的加热器（35Aa）具有在相邻区域的另一区域（32Ab）中延伸的部分（35Aa2），并且嵌入在相邻区域的另一区域（32Ab）中的加热器 相邻区域具有在一个区域（32Aa）中延伸的部分（35Ab2）。

公开(公告)号：US20050257747A1

公开(公告)日：2005-11-24

申请号：US11192047

申请日：2005-07-29

申请人： Satoshi Wakabayashi ,  Shinya Okabe ,  Seishi Murakami ,  Masato Morishima ,  Kunihiro Tada

发明人： Satoshi Wakabayashi ,  Shinya Okabe ,  Seishi Murakami ,  Masato Morishima ,  Kunihiro Tada

IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/285 ,  C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/4581 ,  C23C16/46 ,  H01L21/28556

摘要： A worktable device is disposed inside a film formation process container for a semiconductor process. The worktable device includes a worktable including a top surface to place a target substrate thereon, and a side surface extending downward from the top surface, and a heater disposed in the worktable and configured to heat the substrate through the top surface. A CVD pre-coat layer covers the top surface and the side surface of the worktable. The pre-coat layer has a thickness not less than a thickness which substantially saturates the amount of radiant heat originating from heating of the heater and radiated from the top surface and the side surface of the worktable.

摘要翻译： 工作台装置设置在用于半导体工艺的成膜处理容器内部。 工作台装置包括工作台，其包括顶表面以将目标基板放置在其上，以及从顶表面向下延伸的侧表面，以及设置在工作台中并构造成通过顶表面加热基板的加热器。 CVD预涂层覆盖工作台的顶表面和侧表面。 预涂层的厚度不小于基本上饱和来自加热器的加热并从工作台的顶表面和侧表面辐射的辐射热量的厚度。

公开(公告)号：US20080057344A1

公开(公告)日：2008-03-06

申请号：US10584642

申请日：2004-12-27

申请人： Seishi Murakami ,  Kunihiro Tada

发明人： Seishi Murakami ,  Kunihiro Tada

IPC分类号： B32B33/00 ,  B05C11/10 ,  C23C16/34

CPC分类号： H01L21/76846 ,  C23C16/34 ,  H01L21/28088 ,  H01L21/28556 ,  H01L21/7685 ,  H01L21/76864 ,  H01L21/7687 ,  H01L2221/1078

摘要： Disclosed is a method of forming a titanium nitride film on a substrate through the reaction of titanium tetrachloride and ammonia while minimizing corrosion of the underlying layer. A first titanium nitride layer is formed on a substrate by reacting titanium tetrachloride and ammonia with each other in the supply-limited region while minimizing corrosion of the underlying layer. Thereafter, a second titanium nitride layer is formed on the first titanium nitride layer in the reaction-limited region while achieving good step coverage.

摘要翻译： 公开了通过四氯化钛和氨的反应在基板上形成氮化钛膜的方法，同时使下层的腐蚀最小化。 通过在供给受限区域中使四氯化钛和氨彼此反应而在底物上形成第一氮化钛层，同时使下层的腐蚀最小化。 此后，在反应限制区域的第一氮化钛层上形成第二氮化钛层，同时实现良好的阶梯覆盖。

公开(公告)号：US20080302781A1

公开(公告)日：2008-12-11

申请号：US11631485

申请日：2005-07-01

申请人： Seishi Murakami ,  Kunihiro Tada

发明人： Seishi Murakami ,  Kunihiro Tada

IPC分类号： H05B3/68

CPC分类号： C23C16/46 ,  C23C16/4586 ,  H01L21/67109 ,  H05B3/143

摘要： A processing apparatus has a placement stage that prevents generation of a crack due to heating of an embedded heater. The placement stage (32A) on which a wafer (W) is placed has a plurality of areas (32Aa, 32Ab) so that one of the plurality of heaters is embedded independently in each of the plurality of areas. The heater (35Aa) embedded in one area (32Aa) of adjacent areas has a part (35Aa2) extending in the other area (32Ab) of the adjacent areas, and the heater (35Ab) embedded in the other area (32Ab) of the adjacent areas has a part (35Ab2) extending in the one area (32Aa).

摘要翻译： 处理装置具有防止由于嵌入式加热器的加热而产生裂缝的放置台。 其上放置晶片（W）的放置台（32A）具有多个区域（32Aa，32Ab），使得多个加热器中的一个独立地嵌入在多个区域中的每个区域中。 嵌入在相邻区域的一个区域（32Aa）中的加热器（35Aa）具有在相邻区域的另一区域（32Ab）中延伸的部分（35Aa2），并且嵌入在相邻区域的另一区域（32Ab）中的加热器 相邻区域具有在一个区域（32Aa）中延伸的部分（35Ab2）。

公开(公告)号：US20060231032A1

公开(公告)日：2006-10-19

申请号：US11320535

申请日：2005-12-29

申请人： Seishi Murakami ,  Kunihiro Tada

发明人： Seishi Murakami ,  Kunihiro Tada

IPC分类号： C23C16/00

CPC分类号： C23C16/5096 ,  H01L21/28556 ,  H01L21/76841

摘要： The object of the present invention is to provide a plasma chemical vapor deposition method and apparatus capable of preventing local electric discharge at the peripheral portion of the susceptor. Prior to the film formation, a gas is supplied into an evacuated chamber, and a substrate is supported on substrate support pins, which is arranged in the susceptor and are in their elevated position, so that the substrate is preheated; thereafter the supply of the gas is stopped, the chamber is evacuated, and the substrate support pins are lowered so that the substrate is placed on the susceptor; and thereafter a gas is supplied into the chamber and the substrate is further preheated. Thereafter, plasma is generated in the chamber, and the film-forming gas is supplied into the chamber, to form a film on the substrate.

摘要翻译： 本发明的目的是提供一种等离子体化学气相沉积方法和装置，其能够防止基座的周边部分的局部放电。 在成膜之前，将气体供应到真空室中，并且将基板支撑在设置在基座中并处于其升高位置的基板支撑销上，使得基板被预热; 然后停止供应气体，将室抽真空，并且将基板支撑销降低，使得基板放置在基座上; 然后将气体供应到室中，并且进一步预热基板。 此后，在室中产生等离子体，并且将成膜气体供应到室中，以在基板上形成膜。

公开(公告)号：US08124168B2

公开(公告)日：2012-02-28

申请号：US11667945

申请日：2006-04-04

申请人： Kunihiro Tada ,  Hiroyuki Miyashita ,  Isao Gunji

发明人： Kunihiro Tada ,  Hiroyuki Miyashita ,  Isao Gunji

IPC分类号： C23C16/46

CPC分类号： C23C16/46 ,  C23C16/52 ,  H01L21/67248 ,  H01L22/10

摘要： Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.

摘要翻译： 公开了一种基板处理方法，其中预先测量待处理的基板的红外吸收率或红外线透射率，并且根据测量值对基板进行处理，同时至少在位于中心部分的第一区域中独立地控制温度 基板和在第一区域周围的第二区域中，使用分别设置用于第一区域和第二区域并且可以彼此独立地控制的温度控制装置。

公开(公告)号：US06841203B2

公开(公告)日：2005-01-11

申请号：US10216398

申请日：2002-08-12

申请人： Kunihiro Tada ,  Hayashi Otsuki

发明人： Kunihiro Tada ,  Hayashi Otsuki

IPC分类号： C23C16/04 ,  C23C16/08 ,  H01L21/768 ,  H05H1/24

CPC分类号： H01L21/76843 ,  C23C16/045 ,  C23C16/08 ,  H01L21/76855

摘要： A Ti film is formed by CVD in holes formed in an insulating film formed on a Si substrate or on a Si film formed on a Si substrate by a method according to the present invenitioin. The method includes the steps of: loading a Si substrate into a film forming chamber; evacuating the chamber at a predetermined vacuum; supplying TiCl4 gas, H2 gas, Ar gas and SiH4 gas into the film forming chamber; and producing a plasma in the film forming chamber to deposit a Ti film in the holes formed in the insulating film. The Si substrate is heated at 500° C. or below during the deposition of the Ti film. The flow rate of the SiH4 gas is from 30 to 70% of the flow rate of the TiCl4 gas. This method enables formation of a Ti film on a Si base at positions of holes in an insulating layer, with a good morphology of the interface between the Si base and the Ti film and with a good step coverage.

摘要翻译： 通过CVD法形成的Si膜上形成的绝缘膜上形成的Ti膜或通过本发明的方法形成在Si衬底上的Si膜上形成Ti膜。 该方法包括以下步骤：将Si衬底加载到成膜室中; 在预定的真空下抽空腔室; 将TiCl 4气体，H 2气体，Ar气体和SiH 4气体供给到成膜室中; 并在成膜室中产生等离子体，以在形成在绝缘膜中的孔中沉积Ti膜。 Si衬底在沉积T​​i膜期间在500℃或更低温度下被加热。 SiH 4气体的流量为TiCl 4气体流量的30-70％。 该方法能够在绝缘层的空穴位置的Si基上形成Ti膜，Si基和Ti膜之间的界面的形貌良好，具有良好的阶梯覆盖。

公开(公告)号：US20100227062A1

公开(公告)日：2010-09-09

申请号：US12280044

申请日：2007-02-21

申请人： Kensaku Narushima ,  Satoshi Wakabayashi ,  Kunihiro Tada

发明人： Kensaku Narushima ,  Satoshi Wakabayashi ,  Kunihiro Tada

IPC分类号： C23C16/22

CPC分类号： C23C16/14 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/56

摘要： A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.

摘要翻译： 在设置在室31内的晶片W的表面上形成Ti膜，同时从至少在表面上由含Ni材料制成的喷头40将含有TiCl 4气体的处理气体注入到室31中。 该方法包括在将喷头40设定在300℃以上且小于450℃的温度下，在规定数量的晶片W上形成Ti膜，将TiCl 4气体以1〜 12mL / min（sccm）或者在0.1-2.5Pa的分压下设置TiCl 4气体，然后在将喷头40设定在200〜300℃的温度的同时进行室31内的清洗， 气体进入腔室31。

公开(公告)号：US20070292598A1

公开(公告)日：2007-12-20

申请号：US11667945

申请日：2006-04-04

申请人： Kunihiro Tada ,  Hiroyuki Miyashita ,  Isao Gunji

发明人： Kunihiro Tada ,  Hiroyuki Miyashita ,  Isao Gunji

IPC分类号： C23C16/46 ,  H01L21/02 ,  H01L21/285

CPC分类号： C23C16/46 ,  C23C16/52 ,  H01L21/67248 ,  H01L22/10

摘要： Disclosed is a substrate processing method wherein the infrared absorptance or infrared transmittance of a substrate to be processed is measured in advance, and the substrate is processed according to the measured value while independently controlling temperatures at least in a first region located in the central part of the substrate and in a second region around the first region using temperature control means which are respectively provided for the first region and the second region and can be controlled independently from each other.

摘要翻译： 公开了一种基板处理方法，其中预先测量待处理的基板的红外吸收率或红外线透射率，并且根据测量值对基板进行处理，同时至少在位于中心部分的第一区域中独立地控制温度 基板和在第一区域周围的第二区域中，使用分别设置用于第一区域和第二区域并且可以彼此独立地控制的温度控制装置。