公开(公告)号：US5567990A

公开(公告)日：1996-10-22

申请号：US511866

申请日：1995-08-07

申请人： Tatsuo Kawata ,  Hiroshi Suzuki ,  Hiroki Sashima ,  Kazuhiko Miyabayashi ,  Osamu Horie

发明人： Tatsuo Kawata ,  Hiroshi Suzuki ,  Hiroki Sashima ,  Kazuhiko Miyabayashi ,  Osamu Horie

IPC分类号： C08L63/00 ,  C08G59/20 ,  C08G59/24 ,  C08G59/40 ,  C08G59/62 ,  C08K3/36 ,  C08L63/02 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/293 ,  H01L2924/0002

摘要： A resin-encapsulated semiconductor which is free from the occurrence of blisters or cracks during soldering, suits for continuous production and has excellent moisture resistance reliability is obtained by using an epoxy resin encapsulating material which comprises(A) an epoxy resin component,(B) a curing agent represented by the following general formula (II), ##STR1## wherein m is a number of 0 to 30, (C) at least one cure accelerator selected from the group consisting of compounds represented by the following formulae (III) and (IV), ##STR2## (D) a release agent selected from the group consisting of a polyethylene wax or a mixture thereof with carnauba wax and a mixture of a polyethylene wax or a montanic ester wax, and (E) 65 to 90% by volume of fused silica as a filler.

摘要翻译： 通过使用包含（A）环氧树脂组分的（B）环氧树脂组分的环氧树脂封装材料获得在焊接期间不发生起泡或裂纹的树脂封装的半导体，用于连续生产并具有优异的耐湿可靠性， 由下述通式（II）表示的固化剂，其中m为0〜30的数，（C）至少一种固化促进剂，其选自由下式表示的化合物（ III）和（IV），（IV）（Ⅳ）（D）一种脱模剂，其选自聚乙烯蜡或其与巴西棕榈蜡的混合物，以及聚乙烯蜡或 褐煤酸酯蜡，（E）65〜90体积％的熔融二氧化硅作为填料。

公开(公告)号：US06211277B1

公开(公告)日：2001-04-03

申请号：US09165202

申请日：1998-10-02

申请人： Tatsuo Kawata ,  Hiroki Sashima ,  Takaki Kashihara ,  Masanobu Fujii ,  Naoki Nara ,  Terumi Tsukahara ,  Hiroyuki Sakai

发明人： Tatsuo Kawata ,  Hiroki Sashima ,  Takaki Kashihara ,  Masanobu Fujii ,  Naoki Nara ,  Terumi Tsukahara ,  Hiroyuki Sakai

IPC分类号： C08K300

CPC分类号： H01L23/4951 ,  C08G59/245 ,  C08G59/687 ,  C08K3/40 ,  C08L63/00 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00

摘要： An LOC structure semiconductor device having a good solder heat resistance without electrical characteristic failures due to damages to the passivation film and the diffusion layer thereunder attributing to the filler can be obtained by encapsulating an LOC structure semiconductor chip with an encapsulating material comprising an epoxy resin, a curing agent, a curing promoter, and an inorganic filler, the filler having a smaller particle size than the distance between a inner lead and a semiconductor chip and being in an amount of 80 to 95% by weight based on the total weight of the encapsulating material.

摘要翻译： 通过用包含环氧树脂的封装材料封装LOC结构半导体芯片，可以获得具有良好的焊料耐热性而没有电特性故障的LOC结构半导体器件，这是由于由于对填料引起的钝化膜及其扩散层的损害， 固化剂，固化促进剂和无机填料，所述填料的粒径小于内引线和半导体芯片之间的距离，并且基于所述填料的总重量为80〜95重量％ 封装材料。

公开(公告)号：US4965657A

公开(公告)日：1990-10-23

申请号：US227605

申请日：1988-08-02

申请人： Masatsugu Ogata ,  Tadanori Segawa ,  Hidetoshi Abe ,  Shigeo Suzuki ,  Tatsuo Kawata

发明人： Masatsugu Ogata ,  Tadanori Segawa ,  Hidetoshi Abe ,  Shigeo Suzuki ,  Tatsuo Kawata

IPC分类号： C08G59/00 ,  C08G59/30 ,  C08G59/32 ,  C08G59/38 ,  C08G59/68 ,  C08G59/72 ,  C08K3/22 ,  C08L63/00 ,  G03F7/20 ,  H01L23/29 ,  H01L23/31

CPC分类号： C08G59/3218 ,  C08G59/30 ,  C08G59/38 ,  H01L23/293 ,  H01L2924/0002 ,  Y10T428/239

摘要： A resin encapsulated semiconductor device sealed with an epoxy resin molding material particularly containing a brominated epoxy resin as a flame retardant with the bromine content of 0.5% by weight or less, antimony oxide as a flame retardant in an amount of 2.0% by weight or more and a quaternary phosphonium tetrasubstituted borate as a curing accelerator is excellent in connection reliability at Au/Al junctions and heat resistance.

摘要翻译： 用环氧树脂成型材料密封的树脂封装的半导体装置，特别是含有溴含量为0.5重量％以下的阻燃剂的溴化环氧树脂作为阻燃剂，氧化锑作为阻燃剂的量为2.0重量％以上 作为固化促进剂的季鏻四取代硼酸盐在Au / Al结和耐热性方面的连接可靠性优异。

公开(公告)号：US06774501B2

公开(公告)日：2004-08-10

申请号：US10381034

申请日：2003-03-21

申请人： Kazuhiko Kurafuchi ,  Naoya Suzuki ,  Masaaki Yasuda ,  Tatsuo Kawata ,  Hiroyuki Sakai ,  Masao Kawasumi

发明人： Kazuhiko Kurafuchi ,  Naoya Suzuki ,  Masaaki Yasuda ,  Tatsuo Kawata ,  Hiroyuki Sakai ,  Masao Kawasumi

IPC分类号： H01L2329

CPC分类号： H01L23/3107 ,  C08G59/302 ,  C08L63/00 ,  H01L23/293 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A resin-sealed semiconductor device which comprises a lead frame having a die bond pad and an inner lead, a semiconductor chip installed on the die bond pad via a die bonding material and a sealing material for sealing the semiconductor chip and the lead frame, wherein properties of the die bonding material and the sealing material after curing satisfies the following formulae: &sgr;e≦0.2×&sgr;b formula (1) Ui≧2.0×10−6×&sgr;ei formula (2) Ud≧4.69×10−6×ed formula (3) wherein &sgr;b (MPa)represents the flexural strength at break of the sealing material at 25°, Ui (N·m) and Ud (N·m) represent shear strain energies of the sealing material at a soldering temperature for the inner lead and the die bonding pad, respectively, at a peak temperature during soldering, where &sgr;e=(1/log(kd1))×Ee1×(&agr;m−&agr;e1)×&Dgr;T1 formula (4), &sgr;ei=Ee2×(&agr;e2−&agr;m)×&Dgr;T2 formula (5), &sgr;ed=log(kd2)×Ee2×(&agr;e2−&agr;m)×&Dgr;T2 Formula (6), kd1: a ratio of the flexural elastic modulus Ed1 (MPa) of the die bonding material at 25° to 1 MPa of elastic modulus (Ed1>1 MPa), kd2: a ratio of the flexural elastic modulus Ed2 (MPa) of the die bonding material at the peak temperature during the soldering to 1 MPa of elastic modulus (Ed2>1 MPa), Ee1: a flexural modulus (MPa) of the sealing material at 25°, Ee2: a flexural modulus (MPa) of the sealing material at the peak temperature during soldering, &agr;e1: an average thermal expansion coefficient (1/° C.) of the sealing material from forming temperature for the semiconductor to room temperature (25° C.), &agr;e2: an average thermal expansion coefficient (1/° C.) of the sealing material from the forming temperature for the semiconductor to a peak temperature during soldering, &agr;m: a thermal expansion coefficient (1/° C.) of the lead frame, &Dgr;T1: the difference (° C.) between the forming temperature for the semiconductor and the low temperature side temperature in the temperature cycle, and &Dgr;T2: the difference (° C.) between the forming temperature for the semiconductor and the peak temperature during soldering.

公开(公告)号：US06284818B1

公开(公告)日：2001-09-04

申请号：US09521212

申请日：2000-03-08

申请人： Tatsuo Kawata ,  Hiroyuki Sakai ,  Terumi Tsukahara

发明人： Tatsuo Kawata ,  Hiroyuki Sakai ,  Terumi Tsukahara

IPC分类号： C08K536

CPC分类号： H01L23/293 ,  C08K3/28 ,  C08K5/23 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1301 ,  H01L2924/181 ,  C08L63/00 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In the present invention, provided are i) an encapsulant composition comprising an epoxy resin, a curing agent, an inorganic filler, an adduct of triphenylphosphine with benzoquinone, and a hydrous bismuth nitrate oxide; the inorganic filler being mixed in an amount of from 70% by volume to 85% by volume based on the total weight of the encapsulant composition, and the hydrous bismuth nitrate oxide being mixed in an amount of from 2.5 parts by weight to 20 parts by weight based on 100 parts by weight of the epoxy resin, and ii) an electronic device having an encapsulating member comprising a cured product of this encapsulant composition.

摘要翻译： 在本发明中，i）包含环氧树脂，固化剂，无机填料，三苯基膦与苯醌的加成物和硝酸铋硝酸盐的密封剂组合物; 相对于密封剂组合物的总重量，无机填料的混合量为70体积％至85体积％，硝酸铋水合物的混合量为2.5重量份至20重量份， 基于100重量份的环氧树脂的重量，以及ii）具有包含该密封剂组合物的固化产物的封装构件的电子器件。