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1.发明申请Method of fabricating semiconductor memory device and semiconductor memory device driver 审中-公开制造半导体存储器件和半导体存储器件驱动器的方法公开(公告)号：US20050006672A1
公开(公告)日：2005-01-13
申请号：US10916410
申请日：2004-08-12
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L21/8247 , H01L23/485 , H01L23/52 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/788 , H01L29/792 , H01L29/768
CPC分类号： H01L27/11526 , H01L21/02063 , H01L21/31133 , H01L21/31138 , H01L21/321 , H01L21/76801 , H01L21/76814 , H01L21/76834 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11531 , H01L2224/05599 , H01L2224/05624 , H01L2224/05669 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/13091 , H01L2924/30105 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
摘要翻译： 公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连 在电荷存储部分中。 在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。
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2.发明授权Method of fabricating semiconductor memory device and semiconductor memory device driver 失效制造半导体存储器件和半导体存储器件驱动器的方法公开(公告)号：US06794248B2
公开(公告)日：2004-09-21
申请号：US10279981
申请日：2002-10-25
IPC分类号： H01L21336
CPC分类号： H01L27/11526 , H01L21/02063 , H01L21/31133 , H01L21/31138 , H01L21/321 , H01L21/76801 , H01L21/76814 , H01L21/76834 , H01L24/02 , H01L24/03 , H01L24/05 , H01L27/105 , H01L27/115 , H01L27/11521 , H01L27/11531 , H01L2224/05599 , H01L2224/05624 , H01L2224/05669 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/05042 , H01L2924/1306 , H01L2924/13091 , H01L2924/30105 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor memory device including the step of irradiating ultraviolet rays on a metal interconnection at a bonding pad part, so that the metal interconnection can be prevented from being corroded because of a corrodent element in the process of erasing charges stored in a charge storage part. An oxide coating film is formed on the surface of the metal interconnection at the bonding pad part, and ultraviolet rays are irradiated onto the oxide coating film for erasing of charges from the floating gate.
摘要翻译： 公开了一种制造半导体存储器件的方法，包括在接合焊盘部分的金属互连上照射紫外线的步骤，从而可以防止在消除电荷存储的过程中由于腐蚀元件而腐蚀金属互连 在电荷存储部分中。 在接合焊盘部分的金属互连的表面上形成氧化物涂膜，并且将紫外线照射到氧化物涂膜上，以从浮动栅极擦除电荷。
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