公开(公告)号：US20090142990A1

公开(公告)日：2009-06-04

申请号：US12367037

申请日：2009-02-06

申请人： Tatsuya KOHAMA ,  Itsuki Kobata ,  Toshikazu Nomura

发明人： Tatsuya KOHAMA ,  Itsuki Kobata ,  Toshikazu Nomura

IPC分类号： B24B49/04 ,  B24B49/12 ,  B24B49/10 ,  B24B57/02

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A polishing apparatus can supply a polishing liquid uniformly and efficiently to a surface to be polished of a workpiece. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding a semiconductor wafer and pressing the semiconductor wafer against the polishing surface. The polishing apparatus also includes a polishing liquid supply port for supplying a polishing liquid to the polishing surface, and a moving mechanism for moving the polishing liquid supply port to distribute the polishing liquid uniformly over an entire surface of the workpiece due to relative movement of the workpiece and the polishing surface.

摘要翻译： 抛光装置可以将抛光液体均匀且有效地提供给被抛光的表面。 抛光装置包括具有抛光表面的抛光台和用于保持半导体晶片并将半导体晶片压靠在抛光表面上的顶环。 抛光装置还包括用于将抛光液供给到研磨面的研磨液供给口，以及用于使抛光液供给口移动以使研磨液均匀地分布在工件的整个表面上的移动机构， 工件和抛光面。

公开(公告)号：US20060105678A1

公开(公告)日：2006-05-18

申请号：US11086420

申请日：2005-03-23

申请人： Tatsuya Kohama ,  Itsuki Kobata ,  Toshikazu Nomura

发明人： Tatsuya Kohama ,  Itsuki Kobata ,  Toshikazu Nomura

IPC分类号： B24B51/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A polishing apparatus can supply a polishing liquid uniformly and efficiently to a surface to be polished of a workpiece. The polishing apparatus includes a polishing table having a polishing surface, and a top ring for holding a semiconductor wafer and pressing the semiconductor wafer against the polishing surface. The polishing apparatus also includes a polishing liquid supply port for supplying a polishing liquid to the polishing surface, and a moving mechanism for moving the polishing liquid supply port to distribute the polishing liquid uniformly over an entire surface of the workpiece due to relative movement of the workpiece and the polishing surface.

摘要翻译： 抛光装置可以将抛光液体均匀且有效地提供给被抛光的表面。 抛光装置包括具有抛光表面的抛光台和用于保持半导体晶片并将半导体晶片压靠在抛光表面上的顶环。 抛光装置还包括用于将抛光液供给到研磨面的研磨液供给口，以及用于使抛光液供给口移动以使研磨液均匀地分布在工件的整个表面上的移动机构， 工件和抛光面。

公开(公告)号：US20140030826A1

公开(公告)日：2014-01-30

申请号：US13556568

申请日：2012-07-24

申请人： Shinrou Ohta ,  Toshikazu Nomura ,  Takeshi Iizumi

发明人： Shinrou Ohta ,  Toshikazu Nomura ,  Takeshi Iizumi

IPC分类号： H01L21/66

CPC分类号： H01L22/14 ,  B24B37/013 ,  B24B37/042 ,  B24B49/105 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/7684 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of polishing a wafer having a Ru film and a Ta film or TaN film beneath the Ru film is provided. This polishing method includes: polishing the Ru film by bringing the wafer into sliding contact with a polishing pad; measuring a thickness of the Ru film by a film thickness sensor while polishing the Ru film; calculating a derivative value of an output value of the film thickness sensor; detecting a predetermined point of change in the derivative value; and determining a removal point of the Ru film from a point of time when the point of change is detected.

摘要翻译： 提供了在Ru膜下方研磨具有Ru膜和Ta膜或TaN膜的晶片的方法。 该抛光方法包括：通过使晶片与抛光垫滑动接触来研磨Ru膜; 在研磨Ru膜的同时通过膜厚传感器测量Ru膜的厚度; 计算膜厚传感器的输出值的导数值; 检测所述导数值的预定变化点; 并且从检测到变化点的时间点确定Ru膜的去除点。

公开(公告)号：US20050191858A1

公开(公告)日：2005-09-01

申请号：US11064511

申请日：2005-02-24

申请人： Akira Fukunaga ,  Toshikazu Nomura ,  Katsuhiko Tokushige ,  Manabu Tsujimura

发明人： Akira Fukunaga ,  Toshikazu Nomura ,  Katsuhiko Tokushige ,  Manabu Tsujimura

IPC分类号： B24B37/04 ,  B24B49/12 ,  B24B49/16 ,  H01L21/00 ,  H01L21/321 ,  H01L21/8242 ,  B24B51/00 ,  H01L21/461

CPC分类号： H01L21/67173 ,  B24B37/013 ,  B24B49/12 ,  B24B49/16 ,  H01L21/3212 ,  H01L21/6708 ,  H01L21/67219

摘要： A substrate processing apparatus can process a substrate having a metal film formed thereon. The substrate processing apparatus has a process unit configured to remove a native oxide of a metal film formed on a surface of a substrate. The substrate processing apparatus also has a planarization unit configured to planarize the metal film of the substrate. The process unit may comprise a wet process unit configured to dissolve the native oxide of the metal film in a chemical liquid or a dry process unit configured to reduce or etch the native oxide of the metal film with a gas.

摘要翻译： 基板处理装置可以处理其上形成有金属膜的基板。 基板处理装置具有处理单元，其被配置为去除在基板的表面上形成的金属膜的自然氧化物。 基板处理装置还具有将基板的金属膜平坦化的平坦化单元。 处理单元可以包括湿处理单元，其被配置为将金属膜的天然氧化物溶解在化学液体或干燥处理单元中，所述干燥处理单元被配置为用气体还原或蚀刻金属膜的天然氧化物。