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公开(公告)号：US08422193B2
公开(公告)日：2013-04-16
申请号：US11641334
申请日：2006-12-19
IPC分类号： H01L21/683
CPC分类号： H01L21/6833
摘要： An electrostatic clamp (ESC), system, and method for clamping a workpiece is provided. A clamping plate of the ESC has central disk and an annulus encircling the central disk, wherein the central disk is recessed from the annulus by a gap distance, therein defining a volume. Backside gas delivery apertures are positioned proximate to an interface between the annulus and the central disk. A first voltage to a first electrode of the annulus clamps a peripheral region of the workpiece to a first layer. A second voltage to a second electrode of the central disk generally compensates for a pressure of a backside gas within the volume. The ESC can be formed of J-R- or Coulombic-type materials. A cooling plate associated with the clamping plate further provides cooling by one or more cooling channels configured to route a cooling fluid therethrough.
摘要翻译： 提供了用于夹紧工件的静电夹（ESC），系统和方法。 ESC的夹紧板具有中心盘和围绕中心盘的环形空间，其中中心盘从环形空间中间隙距离定义一个体积。 背侧气体输送孔位于环形区域与中央盘之间的界面附近。 环到第一电极的第一电压将工件的周边区域夹紧到第一层。 中心盘的第二电极的第二电压通常补偿体积内的背侧气体的压力。 ESC可由J-R-或库仑型材料形成。 与夹紧板相关联的冷却板还通过一个或多个冷却通道提供冷却，所述冷却通道被配置成使冷却流体从其中引导。
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公开(公告)号：US20080144251A1
公开(公告)日：2008-06-19
申请号：US11641334
申请日：2006-12-19
IPC分类号： H01L21/687 , H01T23/00
CPC分类号： H01L21/6833
摘要： An electrostatic clamp (ESC), system, and method for clamping a workpiece is provided. A clamping plate of the ESC has central disk and an annulus encircling the central disk, wherein the central disk is recessed from the annulus by a gap distance, therein defining a volume. Backside gas delivery apertures are positioned proximate to an interface between the annulus and the central disk. A first voltage to a first electrode of the annulus clamps a peripheral region of the workpiece to a first layer. A second voltage to a second electrode of the central disk generally compensates for a pressure of a backside gas within the volume. The ESC can be formed of J-R- or Coulombic-type materials. A cooling plate associated with the clamping plate further provides cooling by one or more cooling channels configured to route a cooling fluid therethrough.
摘要翻译： 提供了用于夹紧工件的静电夹（ESC），系统和方法。 ESC的夹紧板具有中心盘和围绕中心盘的环形空间，其中中心盘从环形空间中间隙距离定义一个体积。 背侧气体输送孔位于环形区域与中央盘之间的界面附近。 环形物的第一电极的第一电压将工件的周边区域夹持到第一层。 中心盘的第二电极的第二电压通常补偿体积内的背侧气体的压力。 ESC可由J-R-或库仑型材料形成。 与夹紧板相关联的冷却板还通过一个或多个冷却通道提供冷却，所述冷却通道被配置成使冷却流体从其中引导。
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公开(公告)号：US08902560B2
公开(公告)日：2014-12-02
申请号：US12262990
申请日：2008-10-31
IPC分类号： H01L21/683 , H01T23/00
CPC分类号： H01L21/6831
摘要： An electrostatic chuck and method for clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. A punch is operably coupled to the clamping plate and an electrical ground, wherein the punch comprises a trigger mechanism and a punch tip. The punch tip translates between extended and retracted positions, wherein a point of the punch tip is proud of the clamping surface when the punch tip is in the extended position. The punch tip is configured to translate toward the clamping surface upon clamping the workpiece to the clamping plate. Upon reaching the retracted position, the trigger mechanism imparts an impact force to the punch tip, forcing the punch tip into the workpiece and providing an electrical ground connection to the workpiece.
摘要翻译： 提供一种用于夹持工件的静电卡盘和方法。 ESC包括具有夹紧表面的夹板和一个或多个电极。 施加到一个或多个电极的电位选择性地将工件夹紧到夹紧表面。 冲头可操作地联接到夹板和电接地，其中冲头包括扳机机构和冲头。 冲头顶端在延伸位置和缩回位置之间平移，其中当冲头顶端处于延伸位置时，冲头尖端的点对夹紧表面感到骄傲。 冲压头被配置成在将工件夹紧到夹紧板上时朝向夹紧表面平移。 在到达缩回位置时，触发机构向冲头提供冲击力，迫使冲头尖端进入工件并提供与工件的电接地连接。
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公开(公告)号：US20100142113A1
公开(公告)日：2010-06-10
申请号：US12331619
申请日：2008-12-10
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831
摘要： One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.
摘要翻译： 本发明的一个实施例涉及一种用于通过钳位电压电粘合到静电卡盘表面上的半导体晶片的方法。 在这种方法中，钳位电压被去激活。 在停用之后的一段时间，晶片的第一区域从静电卡盘的表面提升第一距离，而晶片的第二区域保持粘附到静电卡盘的表面。 在此期间监视预定条件。 当满足预定条件时，第二区域从静电卡盘的表面提升。
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公开(公告)号：US09558980B2
公开(公告)日：2017-01-31
申请号：US12725508
申请日：2010-03-17
IPC分类号： H01L21/687 , H01L21/683 , H01J37/20 , H01J37/317 , H01L21/67
CPC分类号： H01L21/6831 , H01J37/20 , H01J37/3171 , H01J2237/002 , H01J2237/2001 , H01J2237/2007 , H01J2237/20214 , H01J2237/2065 , H01J2237/31701 , H01L21/67109
摘要： Aspects of the present invention relate to ion implantation systems that make use of a vapor compression cooling system. In one embodiment, a thermal controller in the vapor compression system sends refrigeration fluid though a compressor and a condenser according to an ideal vapor compression cycle to help limit or prevent undesired heating of a workpiece during implantation, or to actively cool the workpiece.
摘要翻译： 本发明的方面涉及利用蒸气压缩冷却系统的离子注入系统。 在一个实施例中，蒸汽压缩系统中的热控制器根据理想的蒸汽压缩循环通过压缩机和冷凝器发送制冷流体，以帮助限制或防止在植入期间不期望的加热工件，或者主动冷却工件。
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公开(公告)号：US08270142B2
公开(公告)日：2012-09-18
申请号：US12331619
申请日：2008-12-10
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/6831
摘要： One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.
摘要翻译： 本发明的一个实施例涉及一种用于通过钳位电压电粘合到静电卡盘表面上的半导体晶片的方法。 在这种方法中，钳位电压被去激活。 在停用之后的一段时间，晶片的第一区域从静电卡盘的表面提升第一距离，而晶片的第二区域保持粘附到静电卡盘的表面。 在此期间监视预定条件。 当满足预定条件时，第二区域从静电卡盘的表面提升。
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公开(公告)号：US07952851B2
公开(公告)日：2011-05-31
申请号：US12262399
申请日：2008-10-31
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , H01L21/68742
摘要： An electrostatic chuck and method for clamping and de-clamping a workpiece is provided. The ESC comprises a clamping plate having a clamping surface, and one or more electrodes. An electric potential applied to the one or more electrodes selectively clamps the workpiece to the clamping surface. An arc pin operably coupled to the clamping plate and a power source provides an arc for penetrating an insulating layer of the workpiece. The arc pin is selectively connected to an electrical ground, wherein upon removal of the insulative layer of the workpiece, the arc pin provides an electrical ground connection to the workpiece.
摘要翻译： 提供了用于夹紧和去夹紧工件的静电卡盘和方法。 ESC包括具有夹紧表面的夹板和一个或多个电极。 施加到一个或多个电极的电位选择性地将工件夹紧到夹紧表面。 可操作地联接到夹持板的电弧销和电源提供用于穿透工件的绝缘层的电弧。 弧形销被选择性地连接到电接地，其中在移除工件的绝缘层时，电弧销提供与工件的电接地连接。
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公开(公告)号：US20100142114A1
公开(公告)日：2010-06-10
申请号：US12331813
申请日：2008-12-10
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , H02N13/00
摘要： The present invention is directed to an electrostatic chuck (ESC) with a compliant layer formed from TT-Kote® and a method of forming a clamping plate for an ESC. The ESC comprises a compliant layer having a low friction surface for reducing or eliminating particulates generated from thermal expansion. The method comprises forming a clamping member for a substrate comprising a ceramic material and a ceramic surface, and coating the ceramic surface with a compliant layer comprising an organic silicide or TT-Kote®.
摘要翻译： 本发明涉及一种具有由TT-Kote制成的顺应层的静电卡盘（ESC）和形成ESC用夹板的方法。 ESC包括具有低摩擦表面的柔顺层，用于减少或消除由热膨胀产生的微粒。 该方法包括形成用于包括陶瓷材料和陶瓷表面的基底的夹紧构件，并且用包含有机硅化物或TT-Kote的柔性层涂覆陶瓷表面。
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公开(公告)号：US08241425B2
公开(公告)日：2012-08-14
申请号：US12358788
申请日：2009-01-23
CPC分类号： H01L21/6831 , H01L21/67109 , Y10T279/11
摘要： The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber.
摘要翻译： 本发明涉及一种在离子注入期间形成用于保持晶片的卡盘周围的热水层的装置和方法。 热水层位于夹紧表面下方，并且包括真空间隙和封装真空间隙的外壳。 热水器层通过基本上防止卡盘在冷却时的热传递和处理室内的较暖环境之间在处理室内向卡盘的外部提供阻挡阻塞冷凝。
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公开(公告)号：US20100187447A1
公开(公告)日：2010-07-29
申请号：US12358788
申请日：2009-01-23
CPC分类号： H01L21/6831 , H01L21/67109 , Y10T279/11
摘要： The present invention is directed to an apparatus and method of forming a thermos layer surrounding a chuck for holding a wafer during ion implantation. The thermos layer is located below a clamping surface, and comprises a vacuum gap and an outer casing encapsulating the vacuum gap. The thermos layer provides a barrier blocking condensation to the outside of the chuck within a process chamber by substantially preventing heat transfer between the chuck when it is cooled and the warmer environment within the process chamber.
摘要翻译： 本发明涉及一种在离子注入期间形成用于保持晶片的卡盘周围的热水层的装置和方法。 热水层位于夹紧表面下方，并且包括真空间隙和封装真空间隙的外壳。 热水器层通过基本上防止卡盘在冷却时的热传递和处理室内的较暖环境之间在处理室内向卡盘的外部提供阻挡阻塞冷凝。
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