公开(公告)号：US08475668B2

公开(公告)日：2013-07-02

申请号：US12902721

申请日：2010-10-12

申请人： Hiroshi Tanaka ,  Teruomi Minami ,  Yosuke Kawabuchi ,  Norihiro Ito ,  Fumihiro Kamimura ,  Takashi Yabuta ,  Kazuki Kosai ,  Takeshi Uno ,  Kenji Sekiguchi ,  Yasushi Fujii

发明人： Hiroshi Tanaka ,  Teruomi Minami ,  Yosuke Kawabuchi ,  Norihiro Ito ,  Fumihiro Kamimura ,  Takashi Yabuta ,  Kazuki Kosai ,  Takeshi Uno ,  Kenji Sekiguchi ,  Yasushi Fujii

IPC分类号： H01B13/00

CPC分类号： H01L21/02057 ,  H01L21/67051

摘要： Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

摘要翻译： 提供一种基板液体处理装置，基板液体处理方法以及其中存储有基板液体处理程序的计算机可读存储介质，其可以防止由基板中的电荷放电引起的静电破坏的发生。 基板液体处理装置用化学液体处理基板的电路形成表面。 此外，在用化学液体处理基板之前，基板液体处理装置通过防静电液体对与基板的电路形成面相反的表面进行防静电处理，从而将电荷 基质。

公开(公告)号：US08303723B2

公开(公告)日：2012-11-06

申请号：US12634942

申请日：2009-12-10

申请人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

发明人： Teruomi Minami ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

摘要翻译： 在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜 用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜 并且提供用于洗涤破碎的第二膜的碎屑的流体。 控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。

公开(公告)号：US20100108096A1

公开(公告)日：2010-05-06

申请号：US12320536

申请日：2009-01-28

申请人： Teruomi Minami ,  Takashi Yabuta ,  Kazuki Kosai

发明人： Teruomi Minami ,  Takashi Yabuta ,  Kazuki Kosai

IPC分类号： B08B3/10 ,  B08B3/08 ,  B08B13/00

CPC分类号： H01L21/6708 ,  H01L21/02057

摘要： A liquid processing method performs a liquid process after an etching target film formed on a surface of a substrate is etched through a hard mask layer used as an etching mask and having a predetermined pattern formed therein. The liquid process is used for removing the hard mask layer and a polymer deposited due to etching. The method includes a second step of switching from a discard side to a collection side for collecting a chemical liquid used in the liquid process and recycling the chemical liquid in the liquid process, when the hard mask layer is removed by a first step to a residual quantity at which the chemical liquid used in the liquid process becomes collectable for reuse.

摘要翻译： 在通过用作蚀刻掩模并形成有预定图案的硬掩模层蚀刻形成在基板表面上的蚀刻目标膜之后，液体处理方法进行液体处理。 液体方法用于去除硬掩模层和由于蚀刻沉积的聚合物。 该方法包括第二步骤，当将硬掩模层通过第一步骤移除到残余物时，从丢弃侧切换到收集侧，用于收集液体处理中使用的化学液体并循环液体过程中的化学液体 在液体处理中使用的化学液体可以收集用于再利用的量。

公开(公告)号：US20100319734A1

公开(公告)日：2010-12-23

申请号：US12634942

申请日：2009-12-10

申请人： Teruomi MINAMI ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

发明人： Teruomi MINAMI ,  Fumihiro Kamimura ,  Kazuki Kosai ,  Takashi Yabuta ,  Kenji Yokomizo ,  Shogo Mizota

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  H01L21/6708

摘要： In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

摘要翻译： 在一种液体处理装置中，配置为从包括第一膜的第一膜和在第一膜上形成的第二膜的基板上除去第一膜和第二膜，第一药液供给部向基板W供给第一膜 用于溶解第一膜的液体，第二药液供给部供给用于削弱第二膜的第二药液，还用作冲击赋予部的流体供给部对第二膜产生物理冲击，从而破坏第二膜 并且提供用于洗涤破碎的第二膜的碎屑的流体。 控制装置控制各部分，使得在第二液体被供应之后，然后从流体供应部分供应流体，供应第一化学液体。

公开(公告)号：US08308870B2

公开(公告)日：2012-11-13

申请号：US12610599

申请日：2009-11-02

申请人： Teruomi Minami ,  Takashi Yabuta ,  Satoru Tanaka ,  Hirotaka Maruyama ,  Kouichi Eguchi

发明人： Teruomi Minami ,  Takashi Yabuta ,  Satoru Tanaka ,  Hirotaka Maruyama ,  Kouichi Eguchi

IPC分类号： B08B3/08

CPC分类号： H01L21/67051

摘要： Disclosed are a cleaning apparatus and a cleaning method, which can collect a chemical liquid without reducing the throughput after a substrate is subjected to a cleaning treatment and dried by using a drying solvent, such as IPA. The disclosed cleaning apparatus carries out a chemical liquid cleaning treatment, a rinsing treatment, and a drying treatment with IPA, in order, on a wafer W while rotating wafer W, and includes a cleaning liquid supply device for supplying a cleaning liquid for cleaning the drain cup and the drain tube to the drain cup in a state where the cleaning liquid is not supplied to the wafer. Also, the apparatus further includes a control unit for controlling respective components of the cleaning apparatus. The control unit, after the cleaning treatment and then the rinsing treatment of wafer W, at the time when the drying treatment is performed by IPA, controls the cleaning liquid to be supplied to the drain cup.

摘要翻译： 公开了一种清洁装置和清洁方法，其可以在基板经受清洁处理之后收集化学液体而不降低生产量，并通过使用诸如IPA的干燥溶剂进行干燥。 所公开的清洁装置在旋转晶片W的同时在晶片W上进行化学液体清洗处理，漂洗处理和IPA干燥处理，并且包括用于提供用于清洁的清洁液的清洗液供给装置 排水杯和排水管排入排水杯，在清洗液未供给到晶片的状态下。 此外，该装置还包括用于控制清洁装置的各个部件的控制单元。 在通过IPA进行干燥处理之后，控制单元在进行清洁处理，然后进行晶片W的漂洗处理之后，控制向排水杯供给的清洗液。

公开(公告)号：US08113221B2

公开(公告)日：2012-02-14

申请号：US13042844

申请日：2011-03-08

申请人： Hiromitsu Nanba ,  Takashi Yabuta ,  Takehiko Orii

发明人： Hiromitsu Nanba ,  Takashi Yabuta ,  Takehiko Orii

IPC分类号： B08B3/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  G02F2001/1316 ,  G11B23/505 ,  H01L21/67034

摘要： After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.

摘要翻译： 在通过在大致水平状态下旋转晶片W的同时以预定流量将纯水供给到晶片W的表面来进行晶片W的冲洗处理后，纯水对晶片W的供给量减少 ，并且纯水供给点从晶片W的中心向外移动。以这种方式，对晶片W进行旋转干燥处理，同时在纯水供给点的大致外部区域形成液膜 。

公开(公告)号：US20070131256A1

公开(公告)日：2007-06-14

申请号：US10577314

申请日：2004-11-12

申请人： Hiromitsu Nanba ,  Takashi Yabuta ,  Takehiko Orii

发明人： Hiromitsu Nanba ,  Takashi Yabuta ,  Takehiko Orii

IPC分类号： B08B7/00 ,  B08B3/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  G02F2001/1316 ,  G11B23/505 ,  H01L21/67034

摘要： After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.

摘要翻译： 在通过在大致水平状态下旋转晶片W的同时以预定流量将纯水供给到晶片W的表面来进行晶片W的冲洗处理后，纯水对晶片W的供给量减少 ，并且纯水供给点从晶片W的中心向外移动。以这种方式，对晶片W进行旋转干燥处理，同时在纯水供给点的大致外部区域形成液膜 。

公开(公告)号：US08859647B2

公开(公告)日：2014-10-14

申请号：US13384598

申请日：2010-07-30

申请人： Takashi Yabuta ,  Hidetoshi Noda ,  Masanori Hattori

发明人： Takashi Yabuta ,  Hidetoshi Noda ,  Masanori Hattori

IPC分类号： C08J3/22 ,  C08K5/00 ,  C08L51/04

CPC分类号： C08K5/0075 ,  C08F255/06 ,  C08F290/04 ,  C08L51/04 ,  C08L71/126 ,  C08L101/12 ,  C08L2201/04 ,  Y10T428/24802 ,  C08F222/06 ,  C08L23/26 ,  C08L71/02

摘要： An antistatic resin composition is provided, from which a thermoplastic resin molded article having a sufficient permanent antistatic property without impairing an excellent mechanical property or a good appearance of the molded article, even in a case that the content of an antistatic agent contained in the composition is less than that in a conventional composition, is provided. The antistatic resin composition contains an antistatic agent (A) and a thermoplastic resin (B), in which a melt viscosity ratio of the thermoplastic resin (B) to the antistatic agent (A) at 220° C. is 0.5-5 and an absolute value of a difference between solubility parameters (SPs) of the antistatic agent (A) and the thermoplastic resin (B) is 1.0-3.0. The antistatic resin molded article is obtained by molding the antistatic resin composition.

摘要翻译： 提供一种抗静电树脂组合物，即使在包含在组合物中的抗静电剂的含量的情况下，具有足够的永久抗静电性而不损害机械性能或模制品外观的热塑性树脂模塑制品 比常规组合物小。 抗静电性树脂组合物含有热塑性树脂（B）与抗静电剂（A）在220℃下的熔融粘度比为0.5-5的抗静电剂（A）和热塑性树脂（B），和 抗静电剂（A）和热塑性树脂（B）的溶解度参数（SP）之差的绝对值为1.0-3.0。 抗静电树脂成型体通过模制抗静电树脂组合物获得。

公开(公告)号：US20120128945A1

公开(公告)日：2012-05-24

申请号：US13384598

申请日：2010-07-30

申请人： Takashi Yabuta ,  Hidetoshi Noda ,  Masanori Hattori

发明人： Takashi Yabuta ,  Hidetoshi Noda ,  Masanori Hattori

IPC分类号： C08L53/00 ,  B32B3/10

CPC分类号： C08K5/0075 ,  C08F255/06 ,  C08F290/04 ,  C08L51/04 ,  C08L71/126 ,  C08L101/12 ,  C08L2201/04 ,  Y10T428/24802 ,  C08F222/06 ,  C08L23/26 ,  C08L71/02

摘要： An antistatic resin composition is provided, from which a thermoplastic resin molded article having a sufficient permanent antistatic property without impairing an excellent mechanical property or a good appearance of the molded article, even in a case that the content of an antistatic agent contained in the composition is less than that in a conventional composition, is provided. The antistatic resin composition contains an antistatic agent (A) and a thermoplastic resin (B), in which a melt viscosity ratio of the thermoplastic resin (B) to the antistatic agent (A) at 220° C. is 0.5-5 and an absolute value of a difference between solubility parameters (SPs) of the antistatic agent (A) and the thermoplastic resin (B) is 1.0-3.0. The antistatic resin molded article is obtained by molding the antistatic resin composition.

摘要翻译： 提供一种抗静电树脂组合物，即使在包含在组合物中的抗静电剂的含量的情况下，具有足够的永久抗静电性而不损害机械性能或模制品外观的热塑性树脂模塑制品 比常规组合物小。 抗静电性树脂组合物含有热塑性树脂（B）与抗静电剂（A）在220℃下的熔融粘度比为0.5-5的抗静电剂（A）和热塑性树脂（B），和 抗静电剂（A）和热塑性树脂（B）的溶解度参数（SP）之差的绝对值为1.0-3.0。 抗静电树脂成型体通过模制抗静电树脂组合物获得。

公开(公告)号：US07927429B2

公开(公告)日：2011-04-19

申请号：US10577314

申请日：2004-11-12

申请人： Hiromitsu Nanba ,  Takashi Yabuta ,  Takehiko Orii

发明人： Hiromitsu Nanba ,  Takashi Yabuta ,  Takehiko Orii

IPC分类号： B08B7/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  G02F2001/1316 ,  G11B23/505 ,  H01L21/67034

摘要： After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.

摘要翻译： 在通过在大致水平状态下旋转晶片W的同时以预定流量将纯水供给到晶片W的表面来进行晶片W的冲洗处理后，纯水对晶片W的供给量减少 ，并且纯水供给点从晶片W的中心向外移动。以这种方式，对晶片W进行旋转干燥处理，同时在纯水供给点的大致外部区域形成液膜 。