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公开(公告)号:US20100148341A1
公开(公告)日:2010-06-17
申请号:US12654087
申请日:2009-12-10
申请人: Tetsuo Fuji , Akitoshi Yamanaka , Hisanori Yokura
发明人: Tetsuo Fuji , Akitoshi Yamanaka , Hisanori Yokura
IPC分类号: H01L25/065 , H01L23/48 , H01L23/522 , H01L21/60 , H01L21/768 , H01L21/822
CPC分类号: G01P15/125 , B81B7/007 , B81B2207/097 , G01C19/5719 , G01C19/5783 , G01P15/0802 , G01P2015/0814 , H01L23/481 , H01L24/11 , H01L24/12 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/94 , H01L25/0657 , H01L25/16 , H01L2224/0401 , H01L2224/05558 , H01L2224/114 , H01L2224/116 , H01L2224/13009 , H01L2224/13011 , H01L2224/13025 , H01L2224/13099 , H01L2224/13144 , H01L2224/2518 , H01L2224/45144 , H01L2224/48 , H01L2224/48463 , H01L2224/80001 , H01L2224/81805 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01072 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10157 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15747 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/30105 , H01L2924/3025 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要: A semiconductor device includes: a sensor including a sensor structure on a first side of the sensor and a periphery element surrounding the sensor structure; and a cap covering the sensor structure and having a second side bonded to the first side of the sensor. The cap includes a first wiring layer on the second side of the cap. The first wiring layer steps over the periphery element. The sensor further includes a sensor side connection portion, and the cap further includes a cap side connection portion. The sensor side connection portion is bonded to the cap side connection portion. At least one of the sensor side connection portion and the cap side connection portion provides an eutectic alloy so that the sensor side connection portion and the cap side connection portion are bonded to each other.
摘要翻译: 半导体器件包括:传感器,包括在传感器的第一侧上的传感器结构和围绕传感器结构的外围元件; 以及盖,其覆盖所述传感器结构并具有结合到所述传感器的第一侧的第二侧。 盖包括在盖的第二面上的第一布线层。 第一布线层跨越周边元件。 传感器还包括传感器侧连接部分,盖子还包括帽侧连接部分。 传感器侧连接部分接合到盖侧连接部分。 传感器侧连接部和盖侧连接部中的至少一方提供共晶合金,使得传感器侧连接部和盖侧连接部彼此接合。