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公开(公告)号:US12080755B2
公开(公告)日:2024-09-03
申请号:US17512484
申请日:2021-10-27
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Furen Lin , Yunlong Liu , Zhi Peng Feng , Rui Liu , Rui Song , Manoj K Jain
IPC: H01L23/522 , H01L21/768 , H01L23/495 , H01L27/08 , H01L29/66 , H01L49/02
Abstract: In a described example, a method of forming a capacitor includes forming a doped polysilicon layer over a semiconductor substrate. The method also includes forming a dielectric layer on the doped polysilicon layer. The method also includes forming an undoped polysilicon layer on the dielectric layer.
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公开(公告)号:US20240395854A1
公开(公告)日:2024-11-28
申请号:US18795747
申请日:2024-08-06
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Furen Lin , Yunlong Liu , Zhi Peng Feng , Rui Liu , Rui Song , Manoj K Jain
IPC: H01G4/30
Abstract: In a described example, a method of forming a capacitor includes forming a doped polysilicon layer over a semiconductor substrate. The method also includes forming a dielectric layer on the doped polysilicon layer. The method also includes forming an undoped polysilicon layer on the dielectric layer.
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公开(公告)号:US20240120368A1
公开(公告)日:2024-04-11
申请号:US18543769
申请日:2023-12-18
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jing Hu , ZHI PENG Feng , Chao Zuo , Dongsheng Liu , Yunlong Liu , Manoj K Jain , Shengpin Yang
IPC: H01G4/224 , H01L21/225 , H01L21/3215 , H01L21/324 , H01L21/74 , H01L21/762 , H01L29/94
CPC classification number: H01L28/87 , H01L21/2253 , H01L21/32155 , H01L21/324 , H01L21/743 , H01L21/76237 , H01L28/40 , H01L29/945
Abstract: A method of fabricating an integrated circuit includes etching trenches in a first surface of a semiconductor layer. A trench dielectric layer is formed over the first surface and over bottoms and sidewalls of the trenches and a doped polysilicon layer is formed over the trench dielectric layer and within the trenches. The doped polysilicon layer is patterned to form a polysilicon bridge that connects to the polysilicon within the filled trenches and a blanket implant of a first dopant is directed to the polysilicon bridge and to the first surface. The blanket implant forms a contact region extending from the first surface into the semiconductor layer.
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公开(公告)号:US20240258112A1
公开(公告)日:2024-08-01
申请号:US18103134
申请日:2023-01-30
Applicant: Texas Instruments Incorporated
Inventor: Chao Zuo , Jing Hu , Tian Ping Lv , Abbas Ali , Manoj K Jain
IPC: H01L21/3065
CPC classification number: H01L21/30655 , H01L28/40
Abstract: A method of forming an integrated circuit includes forming a plurality of openings in a resist layer over a semiconductor substrate and removing portions of a semiconductor surface layer exposed by the openings, thereby forming a plurality of deep trenches. Removing the portions includes performing a first etch loop for a first plurality of repetitions, the first etch loop including a deposition process executed for a first deposition time and an etch process executed for a first etch time. The removing further includes performing a second etch loop for a second plurality of repetitions, the second etch loop including the deposition process executed for a second deposition time and an etch process executed for a second etch time. The second deposition time is at least 10% greater than the first deposition time, and the second etch time is at least 10% greater than the first etch time.
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公开(公告)号:US11888021B2
公开(公告)日:2024-01-30
申请号:US17489199
申请日:2021-09-29
Applicant: Texas Instruments Incorporated
Inventor: Jing Hu , Zhi Peng Feng , Chao Zuo , Dongsheng Liu , Yunlong Liu , Manoj K Jain , Shengpin Yang
IPC: H01L21/762 , H01L49/02 , H01L21/324 , H01L21/225 , H01L21/74 , H01L29/94 , H01L21/3215
CPC classification number: H01L28/87 , H01L21/2253 , H01L21/324 , H01L21/32155 , H01L21/743 , H01L21/76237 , H01L28/40 , H01L29/945
Abstract: A method of fabricating an integrated circuit includes etching trenches in a first surface of a semiconductor layer. A trench dielectric layer is formed over the first surface and over bottoms and sidewalls of the trenches and a doped polysilicon layer is formed over the trench dielectric layer and within the trenches. The doped polysilicon layer is patterned to form a polysilicon bridge that connects to the polysilicon within the filled trenches and a blanket implant of a first dopant is directed to the polysilicon bridge and to the first surface. The blanket implant forms a contact region extending from the first surface into the semiconductor layer.
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