MULTI-LOOP TIME VARYING BOSCH PROCESS FOR 2-DIMENSIONAL SMALL CD HIGH ASPECT RATIO DEEP SILICON TRENCH ETCHING

    公开(公告)号:US20240258112A1

    公开(公告)日:2024-08-01

    申请号:US18103134

    申请日:2023-01-30

    CPC classification number: H01L21/30655 H01L28/40

    Abstract: A method of forming an integrated circuit includes forming a plurality of openings in a resist layer over a semiconductor substrate and removing portions of a semiconductor surface layer exposed by the openings, thereby forming a plurality of deep trenches. Removing the portions includes performing a first etch loop for a first plurality of repetitions, the first etch loop including a deposition process executed for a first deposition time and an etch process executed for a first etch time. The removing further includes performing a second etch loop for a second plurality of repetitions, the second etch loop including the deposition process executed for a second deposition time and an etch process executed for a second etch time. The second deposition time is at least 10% greater than the first deposition time, and the second etch time is at least 10% greater than the first etch time.

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