公开(公告)号：US20200343164A1

公开(公告)日：2020-10-29

申请号：US16927694

申请日：2020-07-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Joyce Marie Mullenix ,  Roberto Giampiero Massolini ,  Rajeev D. Joshi

IPC: H01L23/495

Abstract: A method includes forming a first magnetic material on a first surface of a conductive loop, forming a second magnetic material on a second surface of the conductive loop opposite the first surface to form an inductor, attaching a semiconductor die to a leadframe, and attaching the inductor to the leadframe with solder balls. The semiconductor die is between the inductor and the leadframe. The conductive loop: spans parallel to the leadframe; or is between the first magnetic material and the second magnetic material.

公开(公告)号：US20190237395A1

公开(公告)日：2019-08-01

申请号：US16378171

申请日：2019-04-08

Applicant: Texas Instruments Incorporated

Inventor： Rajeev D. Joshi ,  Hau Nguyen ,  Anindya Poddar ,  Ken Pham

IPC: H01L23/495 ,  H01L25/16 ,  H01L21/48

CPC classification number: H01L23/49537 ,  H01L21/4825 ,  H01L21/4828 ,  H01L23/3121 ,  H01L23/49544 ,  H01L23/49558 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/49586 ,  H01L23/49589 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L25/16 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/40245 ,  H01L2224/83815 ,  H01L2224/83851 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/1032 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A dual leadframe (100) for semiconductor systems comprising a first leadframe (110) having first metal zones separated by first gaps, the first zones including portions of reduced thickness and joint provisions in selected first locations, and further a second leadframe (120) having second metal zones separated by second gaps, the second zones including portions of reduced thickness and joint provisions (150) in selected second locations matching the first locations. The second leadframe is stacked on top of the first leadframe and the joint provisions of the matching second and first locations linked together. The resulting dual leadframe may further include insulating material (140) filling the first and second gaps and the zone portions of reduced thickness, and has insulating surfaces coplanar with the top and bottom metallic surfaces.

公开(公告)号：US10312184B2

公开(公告)日：2019-06-04

申请号：US14932055

申请日：2015-11-04

Applicant: Texas Instruments Incorporated

Inventor： Rajeev D. Joshi ,  Hau Nguyen ,  Anindya Poddar ,  Ken Pham

IPC: H01L23/495 ,  H01L21/48 ,  H01L25/16 ,  H01L23/31 ,  H01L23/00

Abstract: A dual leadframe (100) for semiconductor systems comprising a first leadframe (110) having first metal zones separated by first gaps, the first zones including portions of reduced thickness and joint provisions in selected first locations, and further a second leadframe (120) having second metal zones separated by second gaps, the second zones including portions of reduced thickness and joint provisions (150) in selected second locations matching the first locations. The second leadframe is stacked on top of the first leadframe and the joint provisions of the matching second and first locations linked together. The resulting dual leadframe may further include insulating material (140) filling the first and second gaps and the zone portions of reduced thickness, and has insulating surfaces coplanar with the top and bottom metallic surfaces.

公开(公告)号：US10573582B2

公开(公告)日：2020-02-25

申请号：US16378171

申请日：2019-04-08

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Rajeev D. Joshi ,  Hau Nguyen ,  Anindya Poddar ,  Ken Pham

IPC: H01L23/495 ,  H01L21/48 ,  H01L25/16 ,  H01L23/00 ,  H01L23/31

Abstract: A dual leadframe (100) for semiconductor systems comprising a first leadframe (110) having first metal zones separated by first gaps, the first zones including portions of reduced thickness and joint provisions in selected first locations, and further a second leadframe (120) having second metal zones separated by second gaps, the second zones including portions of reduced thickness and joint provisions (150) in selected second locations matching the first locations. The second leadframe is stacked on top of the first leadframe and the joint provisions of the matching second and first locations linked together. The resulting dual leadframe may further include insulating material (140) filling the first and second gaps and the zone portions of reduced thickness, and has insulating surfaces coplanar with the top and bottom metallic surfaces.

公开(公告)号：US11257739B2

公开(公告)日：2022-02-22

申请号：US16927694

申请日：2020-07-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Joyce Marie Mullenix ,  Roberto Giampiero Massolini ,  Rajeev D. Joshi

IPC: H01L23/495 ,  H01L23/00

Abstract: A method includes forming a first magnetic material on a first surface of a conductive loop, forming a second magnetic material on a second surface of the conductive loop opposite the first surface to form an inductor, attaching a semiconductor die to a leadframe, and attaching the inductor to the leadframe with solder balls. The semiconductor die is between the inductor and the leadframe. The conductive loop: spans parallel to the leadframe; or is between the first magnetic material and the second magnetic material.

公开(公告)号：US10714412B2

公开(公告)日：2020-07-14

申请号：US15820736

申请日：2017-11-22

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Joyce Marie Mullenix ,  Roberto Giampiero Massolini ,  Rajeev D. Joshi

IPC: H01L23/495 ,  H01L23/00

Abstract: A semiconductor package includes a leadframe comprising input/output pins accessible external to the semiconductor package and a semiconductor die electrically connected to the leadframe. The semiconductor package also includes a passive electrical component mounted on a side of the semiconductor die opposite the leadframe. Mold compound encapsulates the passive electrical component, semiconductor die, and leadframe to form the semiconductor package. Associated methods are disclosed as well.

公开(公告)号：US20170125324A1

公开(公告)日：2017-05-04

申请号：US14932055

申请日：2015-11-04

Applicant: Texas Instruments Incorporated

Inventor： Rajeev D. Joshi ,  Hau Nguyen ,  Anindya Poddar ,  Ken Pham

IPC: H01L23/495 ,  H01L25/16 ,  H01L21/48 ,  H01L23/31

CPC classification number: H01L23/49537 ,  H01L21/4825 ,  H01L21/4828 ,  H01L23/3121 ,  H01L23/49544 ,  H01L23/49558 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/49586 ,  H01L23/49589 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L25/16 ,  H01L2224/16245 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/40245 ,  H01L2224/83815 ,  H01L2224/83851 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/1032 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A dual leadframe (100) for semiconductor systems comprising a first leadframe (110) having first metal zones separated by first gaps, the first zones including portions of reduced thickness and joint provisions in selected first locations, and further a second leadframe (120) having second metal zones separated by second gaps, the second zones including portions of reduced thickness and joint provisions (150) in selected second locations matching the first locations. The second leadframe is stacked on top of the first leadframe and the joint provisions of the matching second and first locations linked together. The resulting dual leadframe may further include insulating material (140) filling the first and second gaps and the zone portions of reduced thickness, and has insulating surfaces coplanar with the top and bottom metallic surfaces.