INTEGRATED MAGNETIC CORE AND WINDING LAMINA

    公开(公告)号:US20220310302A1

    公开(公告)日:2022-09-29

    申请号:US17215457

    申请日:2021-03-29

    Abstract: A microelectronic device includes a magnetic component having a first magnetic core segment and a second magnetic core segment, with a winding lamina between them. The first magnetic core segment includes a winding support portion with ferromagnetic material. The winding lamina is attached to the winding support portion. The first magnetic core segment also includes an extension portion with ferromagnetic material extending from the winding support portion. The winding lamina has winding loops of electrically conductive material that surround ferromagnetic material. A filler material is formed between the winding lamina and the first magnetic core segment, contacting both the winding lamina and the first magnetic core segment. The second magnetic core segment is attached to the extension portion of the first magnetic core segment. The second magnetic core segment includes ferromagnetic material. The winding loops are electrically coupled to external leads through electrical connections.

    Semiconductor systems having dual leadframes

    公开(公告)号:US10573582B2

    公开(公告)日:2020-02-25

    申请号:US16378171

    申请日:2019-04-08

    Abstract: A dual leadframe (100) for semiconductor systems comprising a first leadframe (110) having first metal zones separated by first gaps, the first zones including portions of reduced thickness and joint provisions in selected first locations, and further a second leadframe (120) having second metal zones separated by second gaps, the second zones including portions of reduced thickness and joint provisions (150) in selected second locations matching the first locations. The second leadframe is stacked on top of the first leadframe and the joint provisions of the matching second and first locations linked together. The resulting dual leadframe may further include insulating material (140) filling the first and second gaps and the zone portions of reduced thickness, and has insulating surfaces coplanar with the top and bottom metallic surfaces.

    Spot-Solderable Leads for Semiconductor Device Packages

    公开(公告)号:US20190318983A1

    公开(公告)日:2019-10-17

    申请号:US16455583

    申请日:2019-06-27

    Abstract: A semiconductor device that has at least one semiconductor chip attached to a leadframe made of sheet metal of unencumbered full thickness. The leadframe has leads of a first subset that alternate with leads of a second subset. The leads of the first and second subsets have elongated straight lead portions that are parallel to each other in a planar array. A cover layer of insulating material is located over portions of un-encapsulated lead surfaces. The portions of the leads of the first and second subsets that don't have the cover layer have a metallurgical configuration that creates an affinity for solder wetting.

    STACKED DIE SEMICONDUCTOR PACKAGE

    公开(公告)号:US20210013138A1

    公开(公告)日:2021-01-14

    申请号:US16504816

    申请日:2019-07-08

    Abstract: A stacked die semiconductor package includes a leadframe including a die pad and lead terminals on at least two sides of the die pad, a top die having circuitry coupled to bond pads, and bottom die having a back side that is attached by die attach material to the die pad and a top side having at least one redistribution layer (RDL) over and coupled to a top metal level including connections to input/output (IO) nodes on the top metal level. The RDL provides a metal pattern including wirebond pads that match locations of the bond pads of the top die. The bond pads on the top die are flip-chip attached to the wirebond pads of the bottom die, and the bond wires are positioned between the wirebond pads and the lead terminals.

    Stacked die semiconductor package

    公开(公告)号:US11075147B2

    公开(公告)日:2021-07-27

    申请号:US16504816

    申请日:2019-07-08

    Abstract: A stacked die semiconductor package includes a leadframe including a die pad and lead terminals on at least two sides of the die pad, a top die having circuitry coupled to bond pads, and bottom die having a back side that is attached by die attach material to the die pad and a top side having at least one redistribution layer (RDL) over and coupled to a top metal level including connections to input/output (IO) nodes on the top metal level. The RDL provides a metal pattern including wirebond pads that match locations of the bond pads of the top die. The bond pads on the top die are flip-chip attached to the wirebond pads of the bottom die, and the bond wires are positioned between the wirebond pads and the lead terminals.

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