摘要:
An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.
摘要:
An infrared photodetector including a substrate, a barrier layer, and an absorber layer disposed between the substrate and the barrier layer, the absorber layer having a molar concentration grading that results in an uncoated quantum efficiency of greater than about 40 percent.
摘要:
Optical angle of arrival sensors and methods for determining an angle of arrival of incident light are provided, wherein one sensor includes a focusing lens and an array of lateral-effect position sensing detector (LEPSD) elements. The focusing lens is configured to focus light on the array, wherein each of the LEPSD elements includes an absorber region that absorbs light of a first wavelength range that is focused on the LEPSD elements. Each of the LEPSD elements further includes at least one lateral current conducting layer that has a relatively low sheet resistance.
摘要:
An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic, and the composition of the alloy is selected such that valence bands of the absorption layer and the barrier layer substantially align.
摘要:
Optical angle of arrival sensors and methods for determining an angle of arrival of incident light are provided, wherein one sensor includes a focusing lens and an array of lateral-effect position sensing detector (LEPSD) elements. The focusing lens is configured to focus light on the array, wherein each of the LEPSD elements includes an absorber region that absorbs light of a first wavelength range that is focused on the LEPSD elements. Each of the LEPSD elements further includes at least one lateral current conducting layer that has a relatively low sheet resistance.
摘要:
A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.
摘要:
A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, and a barrier layer coupled to the first absorption layer. The barrier layer is fabricated from an alloy including aluminum and antimony, and at least one of gallium or arsenic. The dual-band infrared detector also includes a second absorption layer coupled to the barrier layer opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band. The composition of the alloy used to fabricate the barrier layer is selected such that valence bands of the barrier layer and the first and second absorption layers substantially align.