公开(公告)号：US20180086625A1

公开(公告)日：2018-03-29

申请号：US15698604

申请日：2017-09-07

申请人： The Government of the United States of America, as Represented by the Secretary of the Navy ,  The Charles Stark Draper Laboratory, Inc.

发明人： Francis J. KUB ,  Karl D. HOBART ,  Eugene A. IMHOFF ,  Rachael L. MYERS-WARD ,  Eugene COOK ,  Jonathan BERNSTEIN ,  Marc WEINBERG

IPC分类号： B81B3/00 ,  B81C1/00 ,  G01C19/5656 ,  G01C19/5621 ,  G01C19/56

CPC分类号： B81B3/0072 ,  B81B7/0016 ,  B81B7/0019 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0163 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C1/00666 ,  B81C2201/0132 ,  B81C2203/036 ,  G01C19/56 ,  G01C19/5621 ,  G01C19/5656 ,  G01C19/5783

摘要： Electromechanical device structures are provided, as well as methods for forming them. The device structures incorporate at least a first and second substrate separated by an interface material layer, where the first substrate comprises an anchor material structure and at least one suspended material structure, optionally a spring material structure, and optionally an electrostatic sense electrode. The device structures may be formed by methods that include providing an interface material layer on one or both of the first and second substrates, bonding the interface materials to the opposing first or second substrate or to the other interface material layer, followed by forming the suspended material structure by etching.

公开(公告)号：US20180065844A1

公开(公告)日：2018-03-08

申请号：US15698597

申请日：2017-09-07

申请人： The Government of the United States of America, as Represented by the Secretary of the Navy

发明人： Eugene A. IMHOFF ,  Francis J. KUB ,  Karl D. HOBART ,  Rachael L. MYERS-WARD

IPC分类号： B81C1/00

CPC分类号： B81C1/00619 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C2201/0112

摘要： Material structures and methods for etching hexagonal, single-crystal silicon carbide (SiC) materials are provided, which include selection of on-axis or near on-axis hexagonal single-crystal SiC material as the material to be etched. The methods include etching of SiC bulk substrate material, etching of SiC material layers bonded to a silicon oxide layer, etching of suspended SiC material layers, and etching of a SiC material layer anodically bonded to a glass layer. Plasma-etched hexagonal single-crystal SiC materials of the invention may be used to form structures that include, but are not limited to, microelectromechanical beams, microelectromechanical membranes, microelectromechanical cantilevers, microelectromechanical bridges, and microelectromechanical field effect transistor devices. The material structures and methods of the invention beneficially provide improved etch symmetry, improved etch straightness, improved sidewall straightness, improved sidewall smoothness, and reduced sidewall wander compared to etched four degree off-axis SiC materials.