公开(公告)号：US09691712B2

公开(公告)日：2017-06-27

申请号：US14466420

申请日：2014-08-22

Applicant: The Regents of the University of California

Inventor： Hugues Marchand ,  Brendan J. Moran ,  Umesh K. Mishra ,  James S. Speck

IPC: H01L23/00 ,  H01L29/20 ,  H01L29/205 ,  H01L21/02 ,  C30B25/02 ,  C30B29/40 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

CPC classification number: H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

公开(公告)号：US20140367698A1

公开(公告)日：2014-12-18

申请号：US14466420

申请日：2014-08-22

Applicant: The Regents of the University of California

Inventor： Hugues Marchand ,  Brendan J. Moran ,  Umesh K. Mishra ,  James S. Speck

IPC: H01L23/00 ,  H01L29/205 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32 ,  H01L29/20 ,  H01L21/02

CPC classification number: H01L23/562 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0025 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply.

Abstract translation: 公开了控制沉积在硅和碳化硅衬底上的GaN膜中的应力控制方法和由其制备的膜。 典型的方法包括提供衬底并在衬底上沉积梯度的氮化镓层，其具有基本上连续等级的从初始组成到由生长室中的至少一种前体的供应形成的最终组成的变化的组成，而不会中断 在供应。 典型的半导体膜包括沉积在衬底上的衬底和梯度的氮化镓层，其具有从初始组成到最终组成的基本连续等级的变化的组成，其由在生长室中供应至少一种前体而形成，而不会中断 在供应。