公开(公告)号：US20130100978A1

公开(公告)日：2013-04-25

申请号：US13659191

申请日：2012-10-24

Applicant: The Regents of the University of California

Inventor： Matthew T. Hardy ,  Po Shan Hsu ,  Steven P. DenBaars ,  James Stephen Speck ,  Shuji Nakamura

IPC: H01L29/201 ,  H01S5/343 ,  H01L33/04

CPC classification number: H01L29/205 ,  B82Y20/00 ,  H01L29/2003 ,  H01L33/06 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/2013 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/173

Abstract: An (Al,In,B,Ga)N based device including a plurality of (Al,In,B,Ga)N layers overlying a semi-polar or non-polar GaN substrate, wherein the (Al,In,B,Ga)N layers include at least a defected layer, a blocking layer, and an active region, the blocking layer is between the active region and the defected layer of the device, and the blocking layer has a larger band gap than surrounding layers to prevent carriers from escaping the active region to the defected layer. One or more (AlInGaN) device layers are above and/or below the (Al,In,B,Ga)N layers. Also described is a nonpolar or semipolar (Al,In,B,Ga)N based optoelectronic device including at least an active region, wherein stress relaxation (Misfit Dislocation formation) is at heterointerfaces above and/or below the active region.

Abstract translation: 一种（Al，In，B，Ga）N基装置，其包括覆盖半极性或非极性GaN衬底的多个（Al，In，B，Ga）N层，其中（Al，In，B，Ga ）N层至少包括缺陷层，阻挡层和有源区，阻挡层位于器件的有源区和缺陷层之间，并且阻挡层具有比周围层更大的带隙以防止载流子 从有源区域转移到缺陷层。 一个或多个（AlInGaN）器件层位于（Al，In，B，Ga）N层的上方和/或下方。 还描述了至少包括活性区域的非极性或半极性（Al，In，B，Ga）N基光电器件，其中应力松弛（不匹配位错形成）位于有源区上方和/或下方的异质界面处。

公开(公告)号：US20130099202A1

公开(公告)日：2013-04-25

申请号：US13659125

申请日：2012-10-24

Applicant: The Regents of the University of California

Inventor： Matthew T. Hardy ,  Shuji Nakamura ,  Steven P. DenBaars ,  James Stephen Speck

IPC: H01L29/15 ,  H01L21/20

CPC classification number: H01L21/02389 ,  B82Y20/00 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/02658 ,  H01L29/2003 ,  H01S5/0014 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

Abstract: An (AlInGaN) based semiconductor device, including one or more (In,Al)GaN layers overlying a semi-polar or non-polar III-nitride substrate or buffer layer, wherein the substrate or buffer employs patterning to influence or control extended defect morphology in layers deposited on the substrate; and one or more (AlInGaN) device layers above and/or below the (In,Al)GaN layers.

Abstract translation: 一种（AlInGaN）半导体器件，包括覆盖半极性或非极性III族氮化物衬底或缓冲层的一个或多个（In，Al）GaN层，其中衬底或缓冲器采用图案化来影响或控制扩展缺陷形态 沉积在基底上的层; 和（In，Al）GaN层之上和/或之下的一个或多个（AlInGaN）器件层。