摘要:
A self-alignment system for complement clock signals includes a first delay circuit and a second delay circuit. A first clock signal may be propagated through the first delay circuit and a second clock signal may be propagated through the second delay circuit. A propagation delay of each of the first and second delay circuits may be selectively varied as a function of the first and second clock signals.
摘要:
A cooling hood for a circuit board is provided. The circuit board includes at least one semiconductor device. The cooling hood includes a duct mounted onto the circuit board and surrounding at least a portion of the semiconductor device. The duct forms an inlet and an outlet. A cooling medium enters the duct through the inlet and exits the duct through the outlet.
摘要:
A method of adjusting a control signal that includes generating a control signal at an unknown frequency and automatically adjusting the unknown frequency of the control signal based on the unknown frequency.
摘要:
A memory device includes a delay-locked loop circuit having delay elements and a synchronization circuit coupled to the delay-locked loop circuit. The synchronization circuit receives a synchronization enable signal and outputs a plurality of enable signals, including an enable signal coupled to an output circuit. Because the enable signal is synchronized with the read signal, it is possible to provide more time to read data into the buffer. A method of reading data from a memory device couples a synchronization enable signal and an external clock signal to a synchronization circuit. A read signal and an output enable are generated based upon a synchronization enable signal and a delayed clock signal of the external clock signal. Because the output signal is synchronized to the read signal, more time is allowed for the sense function.
摘要:
The present invention relates to a memory device which enables a greater amount of time to read data into a buffer. In particular, a memory device according to one aspect of the present invention comprises a delay-locked loop circuit having a plurality of delay elements and a synchronization circuit coupled to the delay-locked loop circuit. The synchronization circuit also receives a synchronization enable signal and outputs a plurality of enable signals, including an enable signal coupled to an output circuit. Because the enable signal coupled to the output circuit is synchronized with the read signal, it is possible to provide more time to read data into the buffer. According to another aspect of the present invention, a method of reading data from a memory device couples a synchronization enable signal to a synchronization circuit. An external clock signal is also coupled to a delay-locked loop circuit. A read signal is generated based upon a synchronization enable signal and a delayed clock signal of the external clock signal. An output enable is also generated based upon the synchronization enable signal and a delayed clock signal of the external clock signal. Because the output signal is synchronized to the read signal, more time is allowed for the sense function.
摘要:
A semiconductor configuration is described which includes a semiconductor body having a main surface and an insulator layer disposed on the main surface of the semiconductor body. The insulator layer has a cavity formed therein extending to the main surface of the semiconductor body. A fuse having a fusible part extends from the main surface of the semiconductor body toward an upper surface of the insulator layer at right angles to the main surface of the semiconductor body, and the fuse is embedded in the cavity. A method for producing the semiconductor configuration having the fuse is also described.
摘要:
A digital circuit has a signal input terminal and a signal output terminal. The digital circuit additionally has a logic circuit unit, whose input is connected to the signal input terminal and whose output is connected to the signal output terminal via a switching element. Furthermore, it has a filter unit, whose input is connected to the signal input terminal and whose output is connected to a control input of the switching element. The filter unit serves for suppressing glitches on a digital signal present at its input.
摘要:
A circuit configuration for processing data, particularly a semiconductor memory chip, has a control circuit for setting a phase or frequency relationship between two signals. A digital counter detects a phase or frequency difference between the two signals, and the counter reading is used for regulating the phase or frequency relationship. Trials have shown that the counter reading indicates an operating state in the circuit configuration and therefore represents a simple signal for assessing the operating state of the circuit configuration. Preferably, the counter reading is taken as a basis for adjusting the speed or power of time-critical or performance-critical circuit parts in the circuit configuration so that an operating state with an intermediate switching speed is obtained.
摘要:
A delay adjustment circuit for decreasing a phase shift between a system clock and a feedback clock from a semiconductor's internal clock. The circuit includes a difference-pulse generator that provides an interim clock 180 degrees out of phase with the feedback clock when the feedback clock is leading the system clock, and equal to the feedback clock otherwise. The difference-pulse generator also provides a difference-pulse signal that is at logic high for a period of time by which the system clock and an inversion of the interim clock are phase shifted. The circuit also includes a delay control unit and a delay unit which delay the interim clock by the period of time. The resulting delayed interim clock, which is 180 degrees out of phase with the system clock, is inverted to provide an internal clock in phase with the system clock.
摘要:
A vertical MOS field effect transistor includes a gate disposed in a trench, a channel, and a source and a drain disposed in the substrate on the trench wall. The gate annularly surrounds a drain terminal which extends from the substrate surface as far as the drain disposed on the trench bottom. It is possible to produce vertical transistors with different channel lengths on a substrate with trenches of different widths by employing oblique implantation when producing the gate. A method of producing the vertical field effect transistor is also provided.