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1.发明授权Copper electroplating process for uniform across wafer deposition and void free filling on ruthenium coated wafers 有权铜电镀工艺，用于跨晶片沉积均匀，并在钌涂层晶片上无空隙填充公开(公告)号：US08703615B1
公开(公告)日：2014-04-22
申请号：US13367710
申请日：2012-02-07
IPC分类号： H01L21/44
CPC分类号： H01L21/76873 , C25D3/38 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/2885 , H01L21/76843 , H01L21/76864 , H01L2221/1089
摘要： Disclosed are methods of depositing and annealing a copper seed layer. A copper seed layer may be deposited on a ruthenium layer disposed on a surface of a wafer and on features in the wafer. The thickness of the ruthenium layer may be about 40 Angstroms or less. The copper seed layer may be annealed in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less. Annealing the copper seed layer in a low-oxygen atmosphere may improve the properties of the copper seed layer.
摘要翻译： 公开了沉积和退火铜籽晶层的方法。 可以将铜籽晶层沉积在设置在晶片表面上的钌层和晶片中的特征上。 钌层的厚度可以为约40埃或更小。 铜种子层可以在氧浓度为约2ppm或更少的还原气氛中退火。 在低氧气氛中退火铜籽晶层可以改善铜籽晶层的性能。
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2.发明申请公开(公告)号：US20140199497A1
公开(公告)日：2014-07-17
申请号：US13741151
申请日：2013-01-14
IPC分类号： B05D3/10
CPC分类号： C23C18/1882 , C23C18/1653 , C25D5/34 , C25D21/12 , H01L21/76861 , H01L21/76873
摘要： Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. Metal oxide surfaces are reduced to form a film integrated with a metal seed layer by contacting a solution with a reducing agent with the metal oxide surfaces. The solution with the reducing agent can contact the metal oxide surfaces under conditions that form an integrated film with the metal seed layer, and that reduces reoxidation from exposure the ambient environment. In some embodiments, an additive can be included with the reducing agent to form a surface protecting layer on the metal seed layer. In some embodiments, the metal is copper used in damascene copper structures.
摘要翻译： 公开了将金属氧化物表面还原成改性金属表面的方法和装置。 通过使溶液与还原剂与金属氧化物表面接触，还原金属氧化物表面以形成与金属种子层一体化的膜。 具有还原剂的溶液可以在与金属种子层形成集成膜的条件下接触金属氧化物表面，并且减少暴露于周围环境中的再氧化。 在一些实施方案中，还原剂可以包含添加剂以在金属种子层上形成表面保护层。 在一些实施例中，金属是铜镶嵌铜结构中使用的铜。
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公开(公告)号：US08575028B2
公开(公告)日：2013-11-05
申请号：US13108894
申请日：2011-05-16
申请人： Jonathan D. Reid , Huanfeng Zhu
发明人： Jonathan D. Reid , Huanfeng Zhu
IPC分类号： H01L21/44
CPC分类号： C25D21/12 , C25D3/38 , C25D7/123 , C25D17/001 , C25D17/008 , H01L21/2885 , H01L21/6723 , H01L21/76864 , H01L21/76882
摘要： Methods, apparatus, and systems for depositing copper and other metals are provided. In some implementations, a wafer substrate is provided to an apparatus. The wafer substrate has a surface with field regions and a feature. A copper layer is plated onto the surface of the wafer substrate. The copper layer is annealed to redistribute copper from regions of the wafer substrate to the feature. Implementations of the disclosed methods, apparatus, and systems allow for void-free bottom-up fill of features in a wafer substrate.
摘要翻译： 提供了用于沉积铜和其他金属的方法，装置和系统。 在一些实施方案中，将晶片衬底提供给设备。 晶片基板具有具有场区域和特征的表面。 铜层被镀在晶片衬底的表面上。 将铜层退火以将铜从晶片衬底的区域重新分配到特征。 所公开的方法，装置和系统的实施允许晶片衬底中的特征的无空隙自底向上填充。
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