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1.发明授权Copper electroplating process for uniform across wafer deposition and void free filling on ruthenium coated wafers 有权铜电镀工艺，用于跨晶片沉积均匀，并在钌涂层晶片上无空隙填充公开(公告)号：US08703615B1
公开(公告)日：2014-04-22
申请号：US13367710
申请日：2012-02-07
IPC分类号： H01L21/44
CPC分类号： H01L21/76873 , C25D3/38 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/2885 , H01L21/76843 , H01L21/76864 , H01L2221/1089
摘要： Disclosed are methods of depositing and annealing a copper seed layer. A copper seed layer may be deposited on a ruthenium layer disposed on a surface of a wafer and on features in the wafer. The thickness of the ruthenium layer may be about 40 Angstroms or less. The copper seed layer may be annealed in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less. Annealing the copper seed layer in a low-oxygen atmosphere may improve the properties of the copper seed layer.
摘要翻译： 公开了沉积和退火铜籽晶层的方法。 可以将铜籽晶层沉积在设置在晶片表面上的钌层和晶片中的特征上。 钌层的厚度可以为约40埃或更小。 铜种子层可以在氧浓度为约2ppm或更少的还原气氛中退火。 在低氧气氛中退火铜籽晶层可以改善铜籽晶层的性能。
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2.发明授权Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers 有权铜电镀工艺，用于跨晶片沉积均匀并在半贵金属涂覆的晶片上无空隙填充公开(公告)号：US08513124B1
公开(公告)日：2013-08-20
申请号：US12785205
申请日：2010-05-21
IPC分类号： H01L21/44
CPC分类号： H01L21/76873 , C25D3/38 , C25D5/18 , C25D5/50 , C25D7/123 , H01L21/2885 , H01L21/76843 , H01L21/76864 , H01L2221/1089
摘要： Disclosed are methods of depositing a copper seed layer to be used for subsequent electroplating a bulk-layer of copper thereon. A copper seed layer may be deposited with different processes, including CVD, PVD, and electroplating. With electroplating methods for depositing a copper seed layer, disclosed are methods for depositing a copper alloy seed layer, methods for depositing a copper seed layer on the semi-noble metal layer with a non-corrosive electrolyte, methods of treating the semi-noble metal layer that the copper seed layer is deposited on, and methods for promoting a more uniform copper seed layer deposition across a semiconductor wafer.
摘要翻译： 公开了一种沉积铜籽晶层的方法，该铜籽晶层用于随后电镀铜的体层。 铜种子层可以以不同的工艺沉积，包括CVD，PVD和电镀。 利用用于沉积铜籽晶层的电镀方法，公开了用于沉积铜合金晶种层的方法，用非腐蚀性电解质在半贵金属层上沉积铜籽晶层的方法，处理半贵金属的方法 沉积铜籽晶层的层，以及用于促进越过半导体晶片的更均匀的铜籽晶层沉积的方法。
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3.发明申请公开(公告)号：US20130256146A1
公开(公告)日：2013-10-03
申请号：US13853935
申请日：2013-03-29
IPC分类号： C25F1/00
CPC分类号： C25F1/00 , C25D17/001 , C25D17/06 , C25D21/00 , C25D21/12 , C25F7/00 , H01L21/67766 , H01L21/67769 , H01L21/68707 , Y10S901/02
摘要： Provided are cleaning methods and systems to remove unintended metallic deposits from electroplating apparatuses using reverse current deplating techniques. Such cleaning involves positioning a cleaning (deplating) disk in an electroplating cup similar to a regular processed substrate. The front surface of the cleaning disk includes a corrosion resistant conductive material to form electrical connections to deposits on the cup's surfaces. The disk is sealed in the cup and submerged into a plating solution. A reverse current is then applied to the front conductive surface of the disk to initiate deplating of the deposits. Sealing compression in the cup may change during cleaning to cause different deformation of the lip seal and to form new electrical connections to the deposits. The proposed cleaning may be applied to remove deposits formed during electroplating of alloys, in particular, tin-silver alloys widely used for semiconductor and wafer level packaging.
摘要翻译： 提供了使用反向电流去除技术从电镀设备中除去非预期的金属沉积物的清洁方法和系统。 这样的清洁包括将清洁（脱落）盘定位在类似于经常处理的基底的电镀杯中。 清洁盘的前表面包括耐腐蚀的导电材料以形成电连接以沉积在杯的表面上。 将盘密封在杯中并浸没在电镀液中。 然后将反向电流施加到盘的前导电表面以开始沉积物的脱落。 杯子内的密封压缩可能在清洁过程中发生变化，导致唇形密封件发生不同的变形，并形成与沉积物的新的电气连接。 所提出的清洁可以用于去除在电镀期间形成的沉积物，特别是广泛用于半导体和晶片级封装的锡 - 银合金。
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公开(公告)号：US09221081B1
公开(公告)日：2015-12-29
申请号：US13563619
申请日：2012-07-31
CPC分类号： C25D21/08 , B08B1/006 , B08B1/04 , B08B3/00 , C23G1/02 , C25D21/00 , C25D21/12 , G01N21/9501 , H01L21/67028 , H01L21/67046 , H01L21/6723
摘要： Disclosed herein are cleaning discs for cleaning one or more elements of a semiconductor processing apparatus. In some embodiments, the disc may have a substantially circular upper surface, a substantially circular lower surface, a substantially circular edge joining the upper and lower surfaces, and a plurality of pores opening at the edge and having an interior extending into the interior of the disc. In some embodiments, the pores are dimensioned such that a cleaning agent may be retained in the interior of the pores by an adhesive force between the cleaning agent and the interior surface of the pores. Also disclosed herein are cleaning methods involving loading a cleaning agent into a plurality of pores of a cleaning disc, positioning the cleaning disc within a semiconductor processing apparatus, and releasing cleaning agent from the plurality of pores such that elements of the apparatus are contacted by the released cleaning agent.
摘要翻译： 这里公开了用于清洁半导体处理装置的一个或多个元件的清洁盘。 在一些实施例中，盘可以具有基本上圆形的上表面，基本上圆形的下表面，连接上表面和下表面的基本圆形的边缘，以及在边缘处开口的多个孔，并且具有延伸到内侧的内部 光盘。 在一些实施例中，孔的尺寸使得清洁剂可以通过清洁剂和孔的内表面之间的粘合力保持在孔的内部。 本文还公开了一种清洁方法，其包括将清洁剂装载到清洁盘的多个孔中，将清洁盘定位在半导体处理装置内，以及从多个孔释放清洁剂，使得装置的元件与 释放清洁剂。
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公开(公告)号：US20100300888A1
公开(公告)日：2010-12-02
申请号：US12786329
申请日：2010-05-24
CPC分类号： C25D7/123 , C25D3/38 , C25D5/18 , C25D17/001
摘要： A plating protocol is employed to control plating of metal onto a wafer comprising a conductive seed layer. Initially, the protocol employs cathodic protection as the wafer is immersed in the plating solution. In certain embodiments, the current density of the wafer is constant during immersion. In a specific example, potentiostatic control is employed to produce a current density in the range of about 1.5 to 20 mA/cm2. The immersion step is followed by a high current pulse step. During bottom up fill inside the features of the wafer, a constant current or a current with a micropulse may be used. This protocol may protect the seed from corrosion while enhancing nucleation during the initial stages of plating.
摘要翻译： 使用电镀方案来控制金属镀在包含导电种子层的晶片上。 最初，当晶片浸入电镀溶液中时，协议采用阴极保护。 在某些实施例中，晶片的电流密度在浸入期间是恒定的。 在具体实例中，使用恒电位控制来产生约1.5至20mA / cm 2范围内的电流密度。 浸没步骤之后是高电流脉冲步骤。 在向下填充晶片的特征内部时，可以使用恒定电流或具有微脉冲的电流。 该方案可以保护种子免受腐蚀，同时在电镀初始阶段增强成核。
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6.发明授权Electrochemical treatment of integrated circuit substrates using concentric anodes and variable field shaping elements 有权使用同心阳极和可变场成形元件的集成电路基板的电化学处理公开(公告)号：US06755954B2
公开(公告)日：2004-06-29
申请号：US10116077
申请日：2002-04-04
申请人： Steven T. Mayer , Timothy Patrick Cleary , Michael John Janicki , Edmund B. Minshall , Thomas A. Ponnuswamy
发明人： Steven T. Mayer , Timothy Patrick Cleary , Michael John Janicki , Edmund B. Minshall , Thomas A. Ponnuswamy
IPC分类号： C25D500
CPC分类号： C25D17/08 , C25D7/123 , C25D17/001 , C25D17/008 , C25D17/12 , Y10S204/07
摘要： An apparatus for electrochemical treatment of a substrate, in particular for electroplating an integrated circuit wafer. An apparatus preferably includes dynamically operable concentric anodes and dielectric shields in an electrochemical bath. Preferably, the bath height of an electrochemical bath, the substrate height, and the shape and positions of an insert shield and a diffuser shield are dynamically variable during electrochemical treatment operations. Step include varying anode current, bath height and substrate height, shield shape, and shield position.
摘要翻译： 一种用于电化学处理衬底的装置，特别是用于电镀集成电路晶片。 设备优选地包括在电化学浴中的动态可操作的同心阳极和介电屏蔽。 优选地，在电化学处理操作期间，电化学浴的浴高度，基底高度以及插入物屏蔽件和扩散器护罩的形状和位置是动态可变的。 步骤包括改变阳极电流，浴槽高度和衬底高度，屏蔽形状和屏蔽位置。
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公开(公告)号：US08500983B2
公开(公告)日：2013-08-06
申请号：US12786329
申请日：2010-05-24
CPC分类号： C25D7/123 , C25D3/38 , C25D5/18 , C25D17/001
摘要： A plating protocol is employed to control plating of metal onto a wafer comprising a conductive seed layer. Initially, the protocol employs cathodic protection as the wafer is immersed in the plating solution. In certain embodiments, the current density of the wafer is constant during immersion. In a specific example, potentiostatic control is employed to produce a current density in the range of about 1.5 to 20 mA/cm2. The immersion step is followed by a high current pulse step. During bottom up fill inside the features of the wafer, a constant current or a current with a micropulse may be used. This protocol may protect the seed from corrosion while enhancing nucleation during the initial stages of plating.
摘要翻译： 使用电镀方案来控制金属镀在包含导电种子层的晶片上。 最初，当晶片浸入电镀溶液中时，协议采用阴极保护。 在某些实施例中，晶片的电流密度在浸入期间是恒定的。 在具体实例中，使用恒电位控制来产生约1.5至20mA / cm 2范围内的电流密度。 浸没步骤之后是高电流脉冲步骤。 在向下填充晶片的特征内部时，可以使用恒定电流或具有微脉冲的电流。 该方案可以保护种子免受腐蚀，同时在电镀初始阶段增强成核。
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