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    Bipolar transistor structure with self-aligned raised extrinsic base and methods
    1.
    发明授权
    Bipolar transistor structure with self-aligned raised extrinsic base and methods 有权
    双极晶体管结构具有自对准引出的外在基极和方法

    公开(公告)号：US07037798B2

    公开(公告)日：2006-05-02

    申请号：US10904482

    申请日：2004-11-12

    申请人： Thomas N. Adam ,  Kevin K. Chan ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu ,  Beth Ann Rainey ,  Kathryn T. Schonenberg

    发明人： Thomas N. Adam ,  Kevin K. Chan ,  Alvin J. Joseph ,  Marwan H. Khater ,  Qizhi Liu ,  Beth Ann Rainey ,  Kathryn T. Schonenberg

    IPC分类号： H01L21/331

    CPC分类号： H01L29/7378 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/66287

    摘要： The invention includes methods of fabricating a bipolar transistor that adds a silicon germanium (SiGe) layer or a third insulator layer of, e.g., high pressure oxide (HIPOX), atop an emitter cap adjacent the intrinsic base prior to forming a link-up layer. This addition allows for removal of the link-up layer using wet etch chemistries to remove the excess SiGe or third insulator layer formed atop the emitter cap without using oxidation. In this case, an oxide section (formed by deposition of an oxide or segregation of the above-mentioned HIPOX layer) and nitride spacer can be used to form the emitter-base isolation. The invention results in lower thermal cycle, lower stress levels, and more control over the emitter cap layer thickness, which are drawbacks of the first embodiment. The invention also includes the resulting bipolar transistor structure.

    摘要翻译： 本发明包括制造双极晶体管的方法，该双极晶体管在形成连接层之前，将硅锗（SiGe）层或例如高压氧化物（HIPOX）的第三绝缘体层与邻近本征基极的发射极帽顶上相加 。 该添加允许使用湿蚀刻化学去除连接层，以去除在不使用氧化的情况下形成在发射极帽顶上的多余SiGe或第三绝缘体层。 在这种情况下，可以使用氧化物部分（通过沉积氧化物或上述HIPOX层的分离）和氮化物间隔物形成发射极 - 基极隔离。 本发明导致较低的热循环，较低的应力水平和对发射极盖层厚度的更多控制，这是第一实施例的缺点。 本发明还包括所得到的双极晶体管结构。

    Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same
    6.
    发明授权
    Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same 失效
    双极晶体管具有可选择的自对准的外部基极和其形成方法

    公开(公告)号：US07253096B2

    公开(公告)日：2007-08-07

    申请号：US11289915

    申请日：2005-11-30

    申请人： Marwan H. Khater ,  James S. Dunn ,  David L. Harame ,  Alvin J. Joseph ,  Qizhi Liu ,  Francois Pagette ,  Stephen A. St. Onge ,  Andreas D. Stricker

    发明人： Marwan H. Khater ,  James S. Dunn ,  David L. Harame ,  Alvin J. Joseph ,  Qizhi Liu ,  Francois Pagette ,  Stephen A. St. Onge ,  Andreas D. Stricker

    IPC分类号： H01L21/4763

    CPC分类号： H01L29/66287 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/732 ,  H01L29/7378

    摘要： A bipolar transistor with raised extrinsic base and selectable self-alignment between the extrinsic base and the emitter is disclosed. The fabrication method may include the formation of a predefined thickness of a first extrinsic base layer of polysilicon or silicon on an intrinsic base. A dielectric landing pad is then formed by lithography on the first extrinsic base layer. Next, a second extrinsic base layer of polysilicon or silicon is formed on top of the dielectric landing pad to finalize the raised extrinsic base total thickness. An emitter opening is formed using lithography and RIE, where the second extrinsic base layer is etched stopping on the dielectric landing pad. The degree of self-alignment between the emitter and the raised extrinsic base is achieved by selecting the first extrinsic base layer thickness, the dielectric landing pad width, and the spacer width.

    摘要翻译： 公开了一种具有凸起的外在基极和在本征基极和发射极之间可选自对准的双极晶体管。 制造方法可以包括在内在基底上形成多晶硅或硅的第一非本征基极层的预定厚度。 然后通过在第一非本征基层上的光刻形成电介质着色焊盘。 接下来，在电介质贴片垫的顶部上形成第二非多晶硅或硅的非本征基极层，以最终确定凸出的非本征基本总厚度。 使用光刻和RIE形成发射器开口，其中第二外部基极层被蚀刻停止在电介质着色焊盘上。 通过选择第一非本征基极层厚度，电介质着陆焊盘宽度和间隔物宽度来实现发射极和凸出的外部基极之间的自对准程度。

    Self-aligned raised extrinsic base bipolar transistor structure and method
    7.
    发明授权
    Self-aligned raised extrinsic base bipolar transistor structure and method 失效
    自对准凸极本征双极晶体管结构及方法

    公开(公告)号：US06869852B1

    公开(公告)日：2005-03-22

    申请号：US10707756

    申请日：2004-01-09

    申请人： Alvin J. Joseph ,  Qizhi Liu ,  BethAnn Rainey ,  Kathryn T. Schonenberg

    发明人： Alvin J. Joseph ,  Qizhi Liu ,  BethAnn Rainey ,  Kathryn T. Schonenberg

    IPC分类号： H01L21/331 ,  H01L29/10 ,  H01L27/082 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

    CPC分类号： H01L29/66287 ,  H01L29/1004 ,  H01L29/66242

    摘要： A method of fabricating a bipolar transistor structure that provides unit current gain frequency (fT) and maximum oscillation frequency (fMAX) improvements of a raised extrinsic base using non-self-aligned techniques to establish a self-aligned structure. Accordingly, the invention eliminates the complexity and cost of current self-aligned raised extrinsic base processes. The invention forms a raised extrinsic base and an emitter opening over a landing pad, i.e., etch stop layer, then replaces the landing pad with a conductor that is converted, in part, to an insulator. An emitter is then formed in the emitter opening once the insulator is removed from the emitter opening. An unconverted portion of the conductor provides a conductive base link and a remaining portion of the insulator under a spacer isolates the extrinsic base from the emitter while maintaining self-alignment of the emitter to the extrinsic base. The invention also includes the resulting bipolar transistor structure.

    摘要翻译： 一种制造双极晶体管结构的方法，其使用非自对准技术建立自对准结构来提供升高的外部基极的单位电流增益频率（fT）和最大振荡频率（fMAX）改善。 因此，本发明消除了当前自对准引起的外在基本过程的复杂性和成本。 本发明形成凸起的非本征基极和在着陆焊盘（即，蚀刻停止层）上开口的发射体，然后用部分转换为绝缘体的导体代替着陆焊盘。 一旦绝缘体从发射极开口移除，就在发射极开口中形成发射极。 导体的未转换部分提供导电基极连接，并且在间隔物下方的绝缘体的剩余部分将外部基极与发射极隔离，同时保持发射极到外部基极的自对准。 本发明还包括所得到的双极晶体管结构。

    Method of base formation in a BiCMOS process
    9.
    发明授权
    Method of base formation in a BiCMOS process 有权
    BiCMOS工艺中碱形成的方法

    公开(公告)号：US07625792B2

    公开(公告)日：2009-12-01

    申请号：US10599938

    申请日：2005-04-06

    申请人： Peter J. Geiss ,  Alvin J. Joseph ,  Qizhi Liu ,  Bradley A. Orner

    发明人： Peter J. Geiss ,  Alvin J. Joseph ,  Qizhi Liu ,  Bradley A. Orner

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/0804 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/1004 ,  H01L29/66287

    摘要： Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector, an intrinsic base above the collector, shallow trench isolation regions adjacent the collector, a raised extrinsic base above the intrinsic base, a T-shaped emitter above the extrinsic base, spacers adjacent the emitter, and a silicide layer that is separated from the emitter by the spacers.

    摘要翻译： 公开了一种双极互补金属氧化物半导体（BiCMOS）或NPN / PNP器件，其具有集电极，集电极之上的本征基极，与集电极相邻的浅沟槽隔离区，在本征基极之上的凸起的外部基极，T形发射极 在外部基极之上，邻近发射极的间隔物和通过间隔物与发射极分离的硅化物层。

    BICMOS DEVICES WITH A SELF-ALIGNED EMITTER AND METHODS OF FABRICATING SUCH BICMOS DEVICES
    10.
    发明申请
    BICMOS DEVICES WITH A SELF-ALIGNED EMITTER AND METHODS OF FABRICATING SUCH BICMOS DEVICES 有权
    具有自对准发射器的BICMOS器件和制造这种BICMOS器件的方法

    公开(公告)号：US20090020851A1

    公开(公告)日：2009-01-22

    申请号：US11614757

    申请日：2006-12-21

    申请人： Qizhi Liu ,  Peter B. Gray ,  Alvin J. Joseph

    发明人： Qizhi Liu ,  Peter B. Gray ,  Alvin J. Joseph

    IPC分类号： H01L21/331 ,  H01L29/73

    CPC分类号： H01L29/41708 ,  H01L29/66242 ,  H01L29/66287 ,  H01L29/732 ,  H01L29/7371

    摘要： A method of fabricating an heterojunction bipolar transistor (HBT) structure in a bipolar complementary metal-oxide-semiconductor (BiCMOS) process selectively thickens an oxide layer overlying a base region in areas that are not covered by a temporary emitter and spacers such that the temporary emitter can be removed and the base-emitter junction can be exposed without also completely removing the oxide overlying the areas of the base region that are not covered by the temporary emitter or spacers. As a result, a photomask is not required to remove the temporary emitter and to expose the base-emitter junction.

    摘要翻译： 在双极互补金属氧化物半导体（BiCMOS）工艺中制造异质结双极晶体管（HBT）结构的方法在未被临时发射极和间隔物覆盖的区域中的基极区域上选择性地增厚氧化物层，使得临时 可以去除发射极，并且可以暴露基极 - 发射极结，而不会完全去除覆盖在未被临时发射极或间隔物覆盖的基极区域的区域上的氧化物。 结果，不需要光掩模去除临时发射体并露出基极 - 发射极结。