公开(公告)号：US5538230A

公开(公告)日：1996-07-23

申请号：US286942

申请日：1994-08-08

申请人： Thomas Sibley

发明人： Thomas Sibley

IPC分类号： A47F7/00 ,  B24C1/04 ,  B24C3/32 ,  C30B25/12 ,  C30B31/14 ,  H01L21/673 ,  B23Q3/00

CPC分类号： H01L21/67326 ,  A47F7/0014 ,  B24C1/04 ,  B24C3/322 ,  C30B25/12 ,  C30B31/14 ,  H01L21/6733

摘要： A single piece, high purity, full density semiconductor wafer holding fixture for holding a multiplicity of wafers and consisting essentially of chemical vapor deposited silicon carbide (CVD SiC). The wafer carrier is advantageous for the fabrication of electronic integrated circuits where high temperatures and/or corrosive chemicals present, where dimensional stability of the holder is advantageous to the process or where introduction of contaminating elements is deleterious to the process. The method for making such an article comprises shaping a substrate, e.g. graphite, which on one surface has the form of the desired shape, said form comprising raised longitudinal sections to support the silicon wafers at the edges of the wafers, chemically vapor depositing a layer of silicon carbide onto the substrate, removing the substrate intact or by burning, machining, grinding, gritblasting and/or dissolving, and grinding the silicon carbide in any areas where a more precise dimension is required.

摘要翻译： 用于保持多个晶片并且基本上由化学气相沉积的碳化硅（CVD SiC）组成的单片，高纯度，全密度的半导体晶片保持夹具。 晶片载体有利于制造存在高温和/或腐蚀性化学品的电子集成电路，其中保持器的尺寸稳定性对于该方法是有利的或者其中引入污染元素对该方法是有害的。 制造这种制品的方法包括使基底成形，例如 石墨，其在一个表面上具有所需形状的形状，所述形式包括凸起的纵向部分，以在晶片的边缘处支撑硅晶片，将碳化硅层化学气相沉积到衬底上，完整地或通过 燃烧，加工，研磨，喷砂和/或溶解，以及在需要更精确尺寸的任何区域中研磨碳化硅。

公开(公告)号：US5443649A

公开(公告)日：1995-08-22

申请号：US343824

申请日：1994-11-22

申请人： Thomas Sibley

发明人： Thomas Sibley

IPC分类号： C23C16/01 ,  C23C16/04 ,  H01L21/673 ,  C23C16/00

CPC分类号： H01L21/67306 ,  C23C16/01 ,  C23C16/042 ,  H01L21/67309

摘要： A single piece, high purity, full density semiconductor wafer holding fixture for holding a multiplicity of wafers and consisting essentially of chemical vapor deposited silicon carbide (CVD SiC). The wafer carrier is advantageous for the fabrication of electronic integrated circuits in a vertical furnace, where high temperatures and/or corrosive chemicals are present, where dimensional stability of the holder is advantageous to the process, and where introduction of contaminating elements is deleterious to the process. The method for making such an article comprises shaping a substrate, e.g. graphite, which on one surface has the form of the desired shape, said form comprising raised longitudinal sections to support the silicon wafers at the edges of the wafers, chemically vapor depositing a layer of silicon carbide onto the substrate, removing the substrate intact or by burning, machining, grinding, gritblasting and/or dissolving, and grinding the silicon carbide in any areas where a more precise dimension is required.

摘要翻译： 用于保持多个晶片并且基本上由化学气相沉积的碳化硅（CVD SiC）组成的单片，高纯度，全密度的半导体晶片保持夹具。 晶片载体有利于在立式炉中制造电子集成电路，其中存在高温和/或腐蚀性化学品，其中保持器的尺寸稳定性对该方法有利，并且其中引入污染元素对于 处理。 制造这种制品的方法包括使基底成形，例如 石墨，其在一个表面上具有所需形状的形状，所述形式包括凸起的纵向部分，以在晶片的边缘处支撑硅晶片，将碳化硅层化学气相沉积到衬底上，完整地或通过 燃烧，加工，研磨，喷砂和/或溶解，以及在需要更精确尺寸的任何区域中研磨碳化硅。

公开(公告)号：US5776391A

公开(公告)日：1998-07-07

申请号：US668449

申请日：1996-06-18

申请人： Thomas Sibley

发明人： Thomas Sibley

IPC分类号： A47F7/00 ,  B24C1/04 ,  B24C3/32 ,  C30B25/12 ,  C30B31/14 ,  H01L21/673 ,  C04B35/565 ,  B23Q3/00

CPC分类号： H01L21/67326 ,  A47F7/0014 ,  B24C1/04 ,  B24C3/322 ,  C30B25/12 ,  C30B31/14 ,  H01L21/6733

摘要： A single piece, high purity, full density semiconductor wafer holding fixture for holding a multiplicity of wafers and consisting essentially of chemical vapor deposited silicon carbide (CVD SiC). The wafer carrier is advantageous for the fabrication of electronic integrated circuits where high temperatures and/or corrosive chemicals present, where dimensional stability of the holder is advantageous to the process or where introduction of contaminating elements is deleterious to the process. The method for making such an article comprises shaping a substrate, e.g. graphite, which on one surface has the form of the desired shape, said form comprising raised longitudinal sections to support the silicon wafers at the edges of the wafers, chemically vapor depositing a layer of silicon carbide onto the substrate, removing the substrate intact or by burning, machining, grinding, gritblasting and/or dissolving, and grinding the silicon carbide in any areas where a more precise dimension is required.

摘要翻译： 用于保持多个晶片并且基本上由化学气相沉积的碳化硅（CVD SiC）组成的单片，高纯度，全密度的半导体晶片保持夹具。 晶片载体有利于制造存在高温和/或腐蚀性化学品的电子集成电路，其中保持器的尺寸稳定性对于该方法是有利的或者其中引入污染元素对该方法是有害的。 制造这种制品的方法包括使基底成形，例如 石墨，其在一个表面上具有所需形状的形状，所述形式包括凸起的纵向部分，以在晶片的边缘处支撑硅晶片，将碳化硅层化学气相沉积到衬底上，完整地或通过 燃烧，加工，研磨，喷砂和/或溶解，以及在需要更精确尺寸的任何区域中研磨碳化硅。

公开(公告)号：US5514439A

公开(公告)日：1996-05-07

申请号：US323265

申请日：1994-10-14

申请人： Thomas Sibley

发明人： Thomas Sibley

IPC分类号： C04B35/565 ,  C23C16/458 ,  H01L21/687 ,  B32B3/02

CPC分类号： H01L21/68757 ,  C04B35/565 ,  C23C16/4581 ,  Y10T428/21 ,  Y10T428/24479 ,  Y10T428/30

摘要： A fixture for supporting a semiconductor wafer during rapid thermal processing, comprising a two-piece assembly of parts, one of which is a silicon carbide wafer support section having a wafer contact face shaped by direct contact with a mold, during its formation by chemical vapor deposition. The other piece is a holding section shaped to keep the wafer support section in place within the reactor. The two-piece assembly improves thermal performance, compared with a one-piece fixture, because the rate of heat conduction across the gap between parts is always less than the rate of heat conduction through a one-piece fixture having the same dimensions.

摘要翻译： 一种用于在快速热处理期间支撑半导体晶片的夹具，包括两件式的部件组件，其中之一是碳化硅晶片支撑部分，其具有通过与模具直接接触而形成的晶片接触面， 沉积 另一个部件是保持部分，其形状用于将晶片支撑部分保持在反应器内的适当位置。 与单件式夹具相比，两件式组件提高了热性能，因为跨部件之间的间隙的热传导速率总是小于通过具有相同尺寸的一体式固定装置的热传导速率。