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    MRAM Device and Fabrication Method Thereof
    1.
    发明申请
    MRAM Device and Fabrication Method Thereof 有权
    MRAM器件及其制造方法

    公开(公告)号：US20130200475A1

    公开(公告)日：2013-08-08

    申请号：US13364881

    申请日：2012-02-02

    申请人： Tien-Wei Chiang ,  Chwen Yu ,  Ya-Chen Kao

    发明人： Tien-Wei Chiang ,  Chwen Yu ,  Ya-Chen Kao

    IPC分类号： H01L29/82

    CPC分类号： H01L27/222 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

    摘要： A magnetoresistive random access memory (MRAM) device and a method of manufacture are provided. The MRAM device comprises a magnetic pinned layer, a compound GMR structure acting as a free layer, and a non-magnetic barrier layer separating the pinned and GMR layers. The barrier layer is provided to reduce the magnetic coupling of the free layer and GMR structure, as well as provide a resistive state (high or low) for retaining binary data (0 or 1) in the device. The GMR structure provides physical electrode connectivity for set/clear memory functionality which is separated from the physical electrode connectivity for the read functionality for the memory device.

    摘要翻译： 提供了一种磁阻随机存取存储器（MRAM）装置及其制造方法。 MRAM器件包括磁性钉扎层，用作自由层的复合GMR结构以及分离钉扎和GMR层的非磁性阻挡层。 提供阻挡层以减少自由层和GMR结构的磁耦合，以及提供用于在装置中保持二进制数据（0或1）的电阻状态（高或低）。 GMR结构提供了用于设置/清除存储器功能的物理电极连接，其与用于存储器件的读取功能的物理电极连接分开。

    MRAM device and fabrication method thereof
    2.
    发明授权
    MRAM device and fabrication method thereof 有权
    MRAM器件及其制造方法

    公开(公告)号：US08884386B2

    公开(公告)日：2014-11-11

    申请号：US13364881

    申请日：2012-02-02

    申请人： Tien-Wei Chiang ,  Chwen Yu ,  Ya-Chen Kao

    发明人： Tien-Wei Chiang ,  Chwen Yu ,  Ya-Chen Kao

    IPC分类号： H01L29/82

    CPC分类号： H01L27/222 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

    摘要： A magnetoresistive random access memory (MRAM) device and a method of manufacture are provided. The MRAM device comprises a magnetic pinned layer, a compound GMR structure acting as a free layer, and a non-magnetic barrier layer separating the pinned and GMR layers. The barrier layer is provided to reduce the magnetic coupling of the free layer and GMR structure, as well as provide a resistive state (high or low) for retaining binary data (0 or 1) in the device. The GMR structure provides physical electrode connectivity for set/clear memory functionality which is separated from the physical electrode connectivity for the read functionality for the memory device.

    摘要翻译： 提供了一种磁阻随机存取存储器（MRAM）装置及其制造方法。 MRAM器件包括磁性钉扎层，用作自由层的复合GMR结构以及分离钉扎和GMR层的非磁性阻挡层。 提供阻挡层以减少自由层和GMR结构的磁耦合，以及提供用于在装置中保持二进制数据（0或1）的电阻状态（高或低）。 GMR结构提供了用于设置/清除存储器功能的物理电极连接，其与用于存储器件的读取功能的物理电极连接分开。

    MAGNETIC DEVICE FABRICATION
    7.
    发明申请
    MAGNETIC DEVICE FABRICATION 有权
    磁性器件制造

    公开(公告)号：US20130146996A1

    公开(公告)日：2013-06-13

    申请号：US13314454

    申请日：2011-12-08

    申请人： Chwen Yu ,  Tien-Wei Chiang ,  Kai-Wen Cheng

    发明人： Chwen Yu ,  Tien-Wei Chiang ,  Kai-Wen Cheng

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L43/12 ,  B82Y40/00 ,  H01F41/308 ,  H01L43/08

    摘要： The present disclosure provides for magnetic devices and methods of fabricating such a device. In one embodiment, a magnetic device includes a first elliptical pillar of first material layers; a second elliptical pillar concentrically disposed over the first elliptical pillar, the second elliptical pillar includes second material layers. The second elliptical pillar is smaller than the first elliptical pillar in size.

    摘要翻译： 本公开提供了磁性器件和制造这种器件的方法。 在一个实施例中，磁性装置包括第一材料层的第一椭圆柱; 同心地设置在第一椭圆柱上的第二椭圆柱，第二椭圆柱包括第二材料层。 第二椭圆柱的尺寸小于第一椭圆柱。

    SPIN TORQUE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY IN DISK BASE WITH REDUCED THRESHOLD CURRENT
    8.
    发明申请
    SPIN TORQUE TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY IN DISK BASE WITH REDUCED THRESHOLD CURRENT 有权
    旋转扭矩传输磁性随机访问存储器，具有降低阈值电流的磁盘阵列

    公开(公告)号：US20120153411A1

    公开(公告)日：2012-06-21

    申请号：US12969163

    申请日：2010-12-15

    申请人： Chwen Yu ,  Tien-Wei Chiang

    发明人： Chwen Yu ,  Tien-Wei Chiang

    IPC分类号： H01L29/82 ,  H01L21/8246

    CPC分类号： H01L27/228 ,  H01L43/08

    摘要： A semiconductor memory device includes a magnetic tunneling junction (MTJ); and a magnetic feature aligned with the MTJ and approximate the MTJ. When viewed in a direction perpendicular to the MTJ and the magnetic feature, the magnetic feature has a disk shape, and the MTJ has an elliptical shape and is positioned within the disk shape.

    摘要翻译： 半导体存储器件包括磁隧道结（MTJ）; 并且与MTJ对准的磁特征并且近似于MTJ。 当从垂直于MTJ和磁性特征的方向观察时，磁性特征具有圆盘形状，并且MTJ具有椭圆形状并且位于盘形状内。

    Spin torque transfer magnetoresistive random access memory in disk base with reduced threshold current
    9.
    发明授权
    Spin torque transfer magnetoresistive random access memory in disk base with reduced threshold current 有权
    磁盘底座中的自旋转矩磁阻随机存取存储器，具有降低的阈值电流

    公开(公告)号：US08477531B2

    公开(公告)日：2013-07-02

    申请号：US12969163

    申请日：2010-12-15

    申请人： Chwen Yu ,  Tien-Wei Chiang

    发明人： Chwen Yu ,  Tien-Wei Chiang

    IPC分类号： H01L29/82

    CPC分类号： H01L27/228 ,  H01L43/08

    摘要： A semiconductor memory device includes a magnetic tunneling junction (MTJ); and a magnetic feature aligned with the MTJ and approximate the MTJ. When viewed in a direction perpendicular to the MTJ and the magnetic feature, the magnetic feature has a disk shape, and the MTJ has an elliptical shape and is positioned within the disk shape.

    摘要翻译： 半导体存储器件包括磁隧道结（MTJ）; 并且与MTJ对准的磁特征并且近似于MTJ。 当从垂直于MTJ和磁性特征的方向观察时，磁性特征具有圆盘形状，并且MTJ具有椭圆形状并且位于盘形状内。

    Magnetic logic device
    10.
    发明授权
    Magnetic logic device 有权
    磁逻辑器件

    公开(公告)号：US08471598B2

    公开(公告)日：2013-06-25

    申请号：US13162190

    申请日：2011-06-16

    申请人： Chwen Yu ,  Kai-Wen Cheng ,  Tien-Wei Chiang

    发明人： Chwen Yu ,  Kai-Wen Cheng ,  Tien-Wei Chiang

    IPC分类号： H03K19/20

    CPC分类号： H03K19/20 ,  H03K19/16

    摘要： The present disclosure provides for magnetic logic devices and methods of operating such a device. In one embodiment, the device includes a bottom electrode configured to receive a first input current and a second input current, a bottom magnetic layer disposed over the bottom electrode, a nonmagnetic layer disposed over the bottom magnetic layer, a top magnetic layer disposed over the nonmagnetic layer, and a top electrode disposed over the top magnetic layer, the top electrode and the bottom electrode configured to provide an output voltage which is dependent on the first and second input currents and which follows an AND gate logic or an OR gate logic.

    摘要翻译： 本公开提供了用于操作这种装置的磁逻辑装置和方法。 在一个实施例中，该器件包括配置成接收第一输入电流和第二输入电流的底部电极，设置在底部电极上的底部磁性层，设置在底部磁性层上的非磁性层，设置在底部磁性层上的顶部磁性层 非磁性层和设置在顶部磁性层上的顶部电极，所述顶部电极和底部电极被配置为提供取决于第一和第二输入电流并且跟随与门逻辑或或门逻辑的输出电压。