摘要:
A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.
摘要:
A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.
摘要:
A solid state imaging device includes: a solid state imaging element including a light receiving element, a microlens formed above the light receiving element, a first transparent layer formed on the microlens and a second transparent layer formed on or above the microlens and harder than the first transparent layer; a transparent component formed above the second transparent layer; and an adhesive layer for bonding the second transparent layer and the transparent component. The hard second transparent layer prevents the occurrence of scratches during a dicing step.
摘要:
A light receiving region 21 and a floating diffusion region 22 are formed apart from each other in a semiconductor substrate 20 (S11), translucent adhesive 31 is applied to an area corresponding to the light receiving region 21 on the semiconductor substrate 20 (S22), and a translucent plate 30 is attached to the semiconductor substrate 20 on which the translucent adhesive 31 has been applied (S23). In this semiconductor manufacturing process, before the translucent adhesive 31 is applied, a dam member 24 is formed on the semiconductor substrate 20 so as to prevent the translucent adhesive 31 from flowing into an area corresponding to the floating diffusion region 22 on the semiconductor substrate 20 (S18).
摘要:
A solid state imaging element including light receiving elements and microlenses is placed in a recess of a ceramic package. A black resin fills space between the ceramic package and the solid state imaging element.
摘要:
A row scanning unit is configured to change a potential of a transfer signal from a second potential V2 to a third potential V3 prior to driving of a transfer operation for causing a transfer of signal charges from a photodiode to a floating diffusion, by supplying a transfer pulse having a first potential V1. The first potential V1 is a positive potential for turning a transfer transistor into ON state, the second potential V2 is a potential for causing pinning of holes under a gate of the transfer transistor and turning the transfer transistor into OFF state, and the third potential V3 is a potential for not causing the pinning of the holes under the gate of the transfer transistor and turning the transfer transistor into OFF state, the third potential being lower than the first potential and higher than the second potential.
摘要:
A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
摘要:
A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
摘要:
A solid-state image sensor includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses corresponding to the light-receiving elements, and has a flattening film formed on the plurality of the micro-lenses. At a center of the light-receiving area, the micro-lenses are placed in positions directly above corresponding photodiodes, and placed in positions which are progressively offset from positions directly above the corresponding photodiodes, towards a center of the light receiving area, as micro-lenses are located farther from the center of the light-receiving area.
摘要:
The solid-state image sensor in the present invention includes a plurality of light-receiving elements arranged in a light-receiving area, and a plurality of micro-lenses 7 corresponding to the light-receiving elements, and has a flattening film 8 formed on the plurality of the micro-lenses. At the center of the light-receiving area, micro-lenses 7 are placed in positions directly above the corresponding photodiodes 1, and placed in positions which are progressively offset from the positions directly above the corresponding photodiodes 1, towards the center of the light receiving area, as micro-lenses 7 are located farther from the center of the light-receiving area.