公开(公告)号：US20240182404A1

公开(公告)日：2024-06-06

申请号：US18440134

申请日：2024-02-13

申请人： TOKUYAMA CORPORATION

发明人： Tomoaki Sato ,  Yuki Kikkawa ,  Takafumi Shimoda ,  Takayuki Negishi

IPC分类号： C07C211/63 ,  H01L21/321 ,  H01L21/3213

CPC分类号： C07C211/63 ,  H01L21/3212 ,  H01L21/32134

摘要： Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.

公开(公告)号：US12024663B2

公开(公告)日：2024-07-02

申请号：US17419058

申请日：2020-02-13

申请人： TOKUYAMA CORPORATION

发明人： Yuki Kikkawa ,  Tomoaki Sato ,  Takafumi Shimoda ,  Takayuki Negishi

IPC分类号： C09K13/06 ,  H01L21/304

CPC分类号： C09K13/06 ,  H01L21/304

摘要： Provided is a treatment liquid for a semiconductor wafer or the like used in a process for forming a semiconductor. Namely a treatment liquid containing (A) a hypochlorite ion, and (B) an alkylammonium salt expressed by the following Formula (1), or the like is provided.




(In the Formula, “a” is an integer from 6 to 20; R1, R2, and R3 are independently, for example, an alkyl group with a carbon number from 1 to 20; and X− is, for example, a chloride ion.).

公开(公告)号：US11674230B2

公开(公告)日：2023-06-13

申请号：US17261387

申请日：2020-07-08

申请人： TOKUYAMA CORPORATION

发明人： Tomoaki Sato ,  Yuki Kikkawa ,  Takafumi Shimoda ,  Takayuki Negishi

IPC分类号： C23F1/40 ,  H01L21/306

CPC分类号： C23F1/40 ,  H01L21/30604

摘要： Provided is a treatment liquid for a semiconductor with ruthenium, containing a hypobromite ion. Also provided is a treatment liquid for a semiconductor with ruthenium, containing at least a bromine-containing compound, an oxidizing agent, a basic compound, and water which are added and mixed, wherein the liquid has the bromine-containing compound added in an amount of 0.01 mass % or more and less than 2 mass % as a bromine element content with respect to the total mass of the liquid, has the oxidizing agent added in an amount of 0.1 mass % or more and 10 mass % or less with respect to the total mass, and has a pH of 8 or more and 14 or less. Further provided is a method of producing a treatment liquid for a semiconductor with ruthenium, including a step of mixing a bromine-containing compound with a solution containing a hypochlorous acid compound and a basic compound.

公开(公告)号：US20210309942A1

公开(公告)日：2021-10-07

申请号：US17057207

申请日：2019-05-20

申请人： Tokuyama Corporation

发明人： Takafumi Shimoda ,  Yuki Kikkawa ,  Takayuki Negishi ,  Seiji Tono

IPC分类号： C11D7/32 ,  C11D11/00 ,  C07C209/68 ,  C07C211/63 ,  H01L21/02

摘要： A method for producing a quaternary alkylammonium hypochlorite solution, includes a preparation step of preparing a quaternary alkylammonium hydroxide solution, and a reaction step of bringing the quaternary alkylammonium hydroxide solution into contact with chlorine, wherein a carbon dioxide concentration in a gas phase portion in the reaction step is 100 ppm by volume or less, and pH of a liquid phase portion in the reaction step is 10.5 or more.

公开(公告)号：US20210062115A1

公开(公告)日：2021-03-04

申请号：US16962260

申请日：2019-01-15

申请人： Tokuyama Corporation

发明人： Takafumi Shimoda ,  Takayuki Negishi ,  Yuki Kikkawa ,  Seiji Tono

IPC分类号： C11D7/32 ,  C11D11/00 ,  C11D7/50 ,  H01L21/02

摘要： A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25° C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

公开(公告)号：US20170222237A1

公开(公告)日：2017-08-03

申请号：US15515245

申请日：2015-09-29

申请人： Tokuyama Corporation

发明人： Takayuki Negishi ,  Shin Watanabe

IPC分类号： H01M8/04664 ,  H01M8/0662 ,  G01N21/80 ,  C01C1/02 ,  G01M3/00 ,  H01M4/92 ,  C01B3/02

CPC分类号： H01M8/04671 ,  C01B3/02 ,  C01C1/02 ,  G01M3/00 ,  G01N21/80 ,  H01M4/926 ,  H01M8/04 ,  H01M8/0662 ,  H01M8/10 ,  H01M2008/1095

摘要： An odorant for fuel gases for anion membrane fuel cells, which imparts a fuel gas with an odor, includes at least one or more substances selected from the group consisting of ammonia, trimethylamine, triethylamine, N,N-diethylmethylamine, N,N-dipropylmethylamine, N,N-dipropylethylamine, N,N-diisopropylmethylamine, N,N-diisopropylethylamine, dimethylamine, diethylamine, dipropylamine, ethylmethylamine, propylmethylamine, propylethylamine, methylamine, ethylamine and propylamine.

公开(公告)号：US11738997B2

公开(公告)日：2023-08-29

申请号：US17357232

申请日：2021-06-24

申请人： TOKUYAMA CORPORATION

发明人： Takayuki Negishi ,  Takafumi Shimoda ,  Akihiro Saito ,  Naoki Matsuda ,  Kenichi Kakizono ,  Takeshi Kawano ,  Masayuki Moriwaki

IPC分类号： C01B11/06 ,  B01F25/43

CPC分类号： C01B11/06 ,  B01F25/43

摘要： The present invention provides industrially advantageous production method and production apparatus, with respect to production of a halogen oxyacid solution. There is solved by a method for producing a halogen oxyacid solution, comprising continuously supplying an organic alkaline solution and halogen to a static mixer and mixing them, to thereby continuously obtain a halogen oxyacid generated.

公开(公告)号：US11572533B2

公开(公告)日：2023-02-07

申请号：US17057207

申请日：2019-05-20

申请人： Tokuyama Corporation

发明人： Takafumi Shimoda ,  Yuki Kikkawa ,  Takayuki Negishi ,  Seiji Tono

IPC分类号： C07C209/66 ,  C11D7/32 ,  C07C209/68 ,  C07C211/63 ,  C11D11/00 ,  H01L21/02

摘要： A method for producing a quaternary alkylammonium hypochlorite solution includes a preparation step of preparing a quaternary alkylammonium hydroxide solution, and a reaction step of bringing the quaternary alkylammonium hydroxide solution into contact with chlorine, wherein a carbon dioxide concentration in a gas phase portion in the reaction step is 100 ppm by volume or less, and pH of a liquid phase portion in the reaction step is 10.5 or more.

公开(公告)号：US11932590B2

公开(公告)日：2024-03-19

申请号：US17266283

申请日：2020-09-23

申请人： TOKUYAMA CORPORATION

发明人： Tomoaki Sato ,  Yuki Kikkawa ,  Takafumi Shimoda ,  Takayuki Negishi

IPC分类号： C07C211/63 ,  H01L21/321 ,  H01L21/3213

CPC分类号： C07C211/63 ,  H01L21/3212 ,  H01L21/32134

摘要： Provided are an inhibitor for RuO4 gas generation used in a manufacturing process of a semiconductor element, that inhibits a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact, and a method for inhibiting the RuO4 gas. Specifically, provided is an inhibitor for RuO4 gas generation for inhibiting a RuO4 gas generated when a semiconductor wafer containing ruthenium and a treatment liquid are brought into contact in semiconductor formation steps, wherein the inhibitor includes an onium salt consisting of an onium ion and a bromine-containing ion. Also provided is a method for inhibiting RuO4 gas generation by adding the inhibitor to a ruthenium treatment liquid or a ruthenium-containing liquid used in semiconductor formation steps.

公开(公告)号：US11572331B2

公开(公告)日：2023-02-07

申请号：US17838536

申请日：2022-06-13

申请人： TOKUYAMA CORPORATION

发明人： Takafumi Shimoda ,  Yuki Kikkawa ,  Tomoaki Sato ,  Takayuki Negishi

IPC分类号： C07C209/68 ,  C11D3/395 ,  C11D11/00 ,  B08B3/08 ,  H01L21/02

摘要： Provided is a method of producing a quaternary alkyl ammonium hypochlorite solution with an excellent storage stability. Specifically, provided is a method of producing a quaternary alkyl ammonium hypochlorite solution, the method including: a preparation step in which a quaternary alkyl ammonium hydroxide solution is prepared and the concentration of amines in the quaternary alkyl ammonium hydroxide solution is set to 20 ppm by mass or less; and a reaction step in which the quaternary alkyl ammonium hydroxide solution is brought into contact with chlorine gas, wherein the concentration of carbon dioxide of a gas phase in the reaction step is 100 ppm by volume or less and the pH of a liquid phase in the reaction step is 10.5 or more.