摘要:
A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10−3 Ω·cm to 8.0×10−3 Ω·cm a film thickness is 500 nm or less, and a transmittance of light at a wavelength of 380 nm is 45% or more.
摘要:
A capacitive touch panel, which is capable of providing high quality display, without a problem of position detection, even in the case where a production process with lower cost and higher heat load is adopted, by application of a transparent conductive film with high heat resistance; a manufacturing method therefor, and a liquid crystal display apparatus.A capacitive touch panel having a structure where at least a transparent conductive film and a dielectric layer are laminated onto a transparent substrate, and a member for position detection comprising at least a wiring portion for position detection along with a electrodes for position detection is arranged at said substrate frame portion, characterized in that the transparent conductive film is composed of an oxide having indium oxide as a main component and containing gallium and tin; and this is provided by a method for producing a capacitive touch panel, characterized in that after forming an amorphous transparent conductive film composed of an oxide having indium oxide as a main component and containing gallium and tin onto the transparent substrate or the like.
摘要:
A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same.It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GaInO3 phase of a β-Ga2O3-type structure, or GaInO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 μm, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.
摘要翻译:用于溅射的靶或用于离子镀的片,其能够获得高速成膜和无结节,适于获得其的氧化物烧结体及其制造方法,以及具有低吸收率的透明导电膜 蓝光和低比电阻,通过使用它们获得。 由具有铟和镓作为氧化物的氧化物烧结体提供,其特征在于具有双晶型结构的In 2 O 3相形成主晶相,并且具有Ga 2 O 3型结构的GaInO 3相或GaInO 3 相和(Ga,In)2 O 3相精细分散在其中,作为平均粒径等于或小于5μm的晶粒,并且镓的含量等于或高于10原子%以下 35原子数为原子数比Ga /(In + Ga)等。
摘要:
A sintered body target for transparent conductive film fabrication is chiefly composed of Ga, In, and O; has a Ga content ranging from 49.1 at. % to 65 at. % with respect to all metallic atoms; is chiefly constructed from a β-GaInO3 phase and an In2O3 phase; provides an In2O3 phase (400)/β-GaInO3 phase (111) X-ray diffraction peak intensity ratio that is 45% or less; and has a density of 5.8 g/cm3 or more. A transparent conductive film obtained by using a sputtering technique is an amorphous oxide transparent conductive film chiefly composed of Ga, In, and O, so that a Ga content ranges from 49.1 at. % to 65 at. % with respect to all metallic atoms, a work function is 5.1 eV or more, and a refractive index for light with a wavelength of 633 nm ranges from 1.65 to 1.85.
摘要翻译:用于透明导电膜制造的烧结体靶主要由Ga,In和O组成; Ga含量范围从49.1英尺。 至65岁。 相对于所有金属原子的%; 主要由β-GaInO 3相和In 2 O 3相构成; 提供45%以下的In2O3相(400)/β-GaInO3相(111)X射线衍射峰强度比; 并且具有5.8g / cm 3以上的密度。 通过使用溅射技术获得的透明导电膜是主要由Ga,In和O组成的非晶氧化物透明导电膜,使得Ga含量范围为49.1at。 至65岁。 相对于所有金属原子,功函数为5.1eV以上,波长633nm的光的折射率为1.65〜1.85。
摘要:
There is provided an amorphous transparent conductive thin film with a low resistivity, a low absolute value for the internal stress of the film, and a high transmittance in the visible light range, an oxide sintered body for manufacturing the amorphous transparent conductive thin film, and a sputtering target obtained therefrom. An oxide sintered body is obtained by: preparing In2O3 powder, WO3 powder, and ZnO powder with an average grain size of less than 1 μm so that tungsten is at a W/In atomic number ratio of 0.004 to 0.023, and zinc is at a Zn/In atomic number ratio of 0.004 to 0.100; mixing the prepared powder for 10 to 30 hours; granulating the obtained mixed powder until the average grain size is 20 to 150 μm; molding the obtained granulated powder by a cold isostatic press with a pressure of 2 to 5 ton/cm2, and sintering the obtained compact at 1200 to 1500 degree.C. for 10 to 40 hours in an atmosphere where oxygen is introduced into the atmosphere of the sinter furnace at a rate of 50 to 250 liters/min per 0.1 m3 furnace volume.
摘要翻译:提供一种具有低电阻率,薄膜内应力绝对值低,可见光范围高透射率的非晶透明导电薄膜,用于制造非晶透明导电薄膜的氧化物烧结体,以及 从其获得的溅射靶。 通过以下方法获得氧化物烧结体:制备In 2 N 3 O 3粉末WO 3 N 3粉末和平均晶粒尺寸较小的ZnO粉末 使得钨的W / In原子数比为0.004〜0.023,锌的Zn / In原子数比为0.004〜0.100; 将制备的粉末混合10至30小时; 将得到的混合粉末造粒直至平均粒径为20〜150μm; 通过2〜5吨/平方厘米压力的冷等静压机成型所获得的造粒粉末,并将所得成形体烧结在1200〜1500℃。 在每0.1m 3炉体积以50至250升/分的速率将氧气引入烧结炉的气氛中的气氛中进行10至40小时。
摘要:
A tablet for ion plating enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof. A tablet for ion plating obtained by processing an oxide sintered body includes indium and cerium as oxides, and having a cerium content of 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce). The oxide sintered body has an In2O3 phase of a bixbyite structure as a main crystal phase, has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm, as a second phase. The oxide sintered body is produced by (a) mixing raw material powder consisting of indium oxide powder with an average particle diameter of equal to or smaller than 1.5 μm, then (b) molding the mixed powder, and sintering the molding by a normal pressure sintering method, or (b′) molding and sintering the mixed powder by a hot press method.
摘要:
Provided are a semiconductor light-emitting element that is capable of efficiently outputting blue color or ultraviolet light, and a lamp using the semiconductor light-emitting element.The semiconductor light-emitting element is obtained by a manufacturing method that, when manufacturing the semiconductor light-emitting element that comprises a compound semiconductor layer that includes at least a p-type semiconductor layer, and a transparent electrode that is provided on the p-type semiconductor layer, includes a step of forming a film comprising an oxide of indium and gallium, or forming a film comprising an oxide of indium, gallium and tin, in an amorphous state on the p-type semiconductor layer, so as to form a transparent conductive film, followed by a step of performing an annealing process on the transparent conductive film at a temperature of 200° C. to 480° C.
摘要:
A target for sputtering or a tablet for ion plating, which enables to attain high rate film-formation and a nodule-less, an oxide sintered body suitable for obtaining the same and a production method therefor, and a transparent conductive film having low absorption of blue light and low specific resistance, obtained by using the same. It is provided by an oxide sintered body having indium and gallium as an oxide, characterized in that an In2O3 phase with a bixbyite-type structure forms a major crystal phase, and a GalnO3 phase of a β-Ga2O3-type structure, or GalnO3 phase and a (Ga, In)2O3 phase is finely dispersed therein, as a crystal grain having an average particle diameter of equal to or smaller than 5 μm, and a content of gallium is equal to or higher than 10% by atom and below 35% by atom as atom number ratio of Ga/(In+Ga) or the like.
摘要翻译:用于溅射的靶或用于离子镀的片,其能够获得高速成膜和无结节,适于获得其的氧化物烧结体及其制造方法,以及具有低吸收率的透明导电膜 蓝光和低比电阻,通过使用它们获得。 它由具有铟和镓作为氧化物的氧化物烧结体提供,其特征在于具有双晶型结构的In 2 O 3相形成主晶相,并且具有β-Ga 2 O 3型结构的GalnO 3相或GalNO 3相 和(Ga,In)2 O 3相,作为平均粒径为5μm以下的结晶粒,并且镓的含量等于或高于10原子%,低于35 以原子数比Ga /(In + Ga)等原子计。
摘要:
An oxide sintered body substantially containing zinc, tin and oxygen; containing tin at an atomic number ratio, Sn/(Zn+Sn), of 0.23 to 0.50, and being composed mainly of a zinc oxide phase and at least one kind of zinc stannate compound phase, or being composed of at least one kind of zinc stannate compound phase; provided by a method for manufacturing the oxide sintered body by formulating an aqueous solvent to raw material powder containing powder of a zinc stannate compound, or mixed powder of tin oxide powder and zinc oxide powder, and after mixing the resulting slurry for equal to longer than 15 hours, by subjecting the slurry to solid-liquid separation, drying and granulation, and subsequently compacting by charging the granule into a mold, followed by sintering the resultant compact under sintering atmosphere at 1300 to 1500° C. for equal to or longer than 15 hours.
摘要:
A tablet for ion plating which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof.A tablet for ion plating obtained by processing an oxide sintered body comprising indium and cerium as oxides, and having a cerium content of 0.3 to 9% by atom, as an atomicity ratio of Ce/(In+Ce), characterized in that said oxide sintered body has an In2O3 phase of a bixbyite structure as a main crystal phase, has a CeO2 phase of a fluorite-type structure finely dispersed as crystal grains having an average particle diameter of equal to or smaller than 3 μm, as a second phase; and the oxide sintered body is produced by mixing raw material powder consisting of indium oxide powder with an average particle diameter of equal to or smaller than 1.5 μm, then molding the mixed powder, and sintering the molding by a normal pressure sintering method, or molding and sintering the mixed powder by a hot press method.