公开(公告)号：US20170350826A1

公开(公告)日：2017-12-07

申请号：US15611290

申请日：2017-06-01

Applicant: Tokyo Electron Limited

Inventor： Xinkang TIAN ,  Ching-Ling MENG

IPC: G01N21/88 ,  G01N21/49 ,  G01N21/95 ,  G01N21/47

CPC classification number: G01N21/8806 ,  G01N21/49 ,  G01N21/9501 ,  G01N2021/4735 ,  G01N2021/8822 ,  G01N2201/06113

Abstract: Provided is a method, system, and apparatus for inspecting a substrate. The method comprises illuminating the substrate with a singular laser beam, the singular laser beam forming an illuminated spot on the substrate and a bright fringe at a surface of the substrate, the bright fringe extending over at least a portion of the illuminated spot, and detecting, by an optical detection system, scattered light from nano-defects present on the substrate within the illuminated spot.

公开(公告)号：US20170314991A1

公开(公告)日：2017-11-02

申请号：US15648035

申请日：2017-07-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ching-Ling MENG ,  Holger TUITJE ,  Yan CHEN ,  Mihail MIHAYLOV

IPC: G01J3/443 ,  G01N21/31 ,  G01N21/68

CPC classification number: G01J3/443 ,  G01N21/31 ,  G01N21/68 ,  G01N2201/10

Abstract: Disclosed is a method, system, and apparatus for optical emission measurement. The apparatus includes a collection system for collecting a plasma optical emission spectra through an optical window disposed at a wall of a plasma processing chamber. The optical system includes a mirror configured to scan a plurality of non-coincident rays across the plasma processing chamber; and a telecentric coupler for collecting an optical signal from a plasma and directing the optical signal to a spectrometer for measuring the plasma optical emission spectra.

公开(公告)号：US20190056320A1

公开(公告)日：2019-02-21

申请号：US16107580

申请日：2018-08-21

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Mihail MIHAYLOV ,  Hanyou CHU ,  Ching-Ling MENG ,  Qionglin GAO ,  Yan CHEN ,  Xinkang TIAN

IPC: G01N21/41 ,  H01L21/67 ,  H01L21/02

Abstract: An apparatus and a method for in-situ phase determination are provided. The apparatus includes a measurement chamber configured to retain a substance, and an entrance window mounted on a side of the measurement chamber. An exit window is mounted on an opposite side of the measurement chamber, and the exit window is parallel with the entrance window. The apparatus further includes a light source configured to generate an incident light beam. The incident light beam is directed to the entrance window at a non-zero angle of incidence with respect to a normal of the entrance window. The incident light beam passes through the entrance window, the measurement chamber and the exit window to form an output light beam. A detector is positioned under the exit window and configured to collect the output light beam passing through the exit window and generate measurement data.

公开(公告)号：US20150078416A1

公开(公告)日：2015-03-19

申请号：US14490430

申请日：2014-09-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun PEI ,  Junwei BAO ,  Holger TUITJE ,  Ching-Ling MENG ,  Mihail D. MIHAYLOV

IPC: G01K11/24 ,  H01L21/66

CPC classification number: G01K11/24 ,  H01L21/67248

Abstract: Disclosed is a method and apparatus for measuring semiconductor substrate temperature using a differential acoustic time of flight measurement technique. The measurement is based on measuring the time of flight of acoustic (ultrasonic) waves across the substrate, and calculating a substrate temperature from the measured time of flight and the known temperature dependence of the speed of sound for the substrate material. The differential acoustic time of flight method eliminates most sources of interference and error, for example due to varying coupling between an ultrasonic transducer and the substrate. To further increase the accuracy of the differential acoustic time of flight measurement, a correlation waveform processing algorithm is utilized to obtain a differential acoustic time of flight measurement from two measured ultrasonic waveforms. To facilitate signal recognition and processing, a symmetric Lamb mode may be used as mode of excitation of the substrate.

Abstract translation: 公开了一种使用飞行测量技术的差分声学时间来测量半导体衬底温度的方法和装置。 该测量基于测量穿过基底的声波（超声波）的飞行时间，以及从测量的飞行时间和基底材料的声速的已知温度依赖性来计算基底温度。 差分声学时间飞行方法消除了大量的干扰和误差源，例如由于超声换能器和基底之间的耦合变化。 为了进一步提高差分声学时间飞行测量的精度，利用相关波形处理算法从两个测量的超声波波形获得飞行测量的差分声学时间。 为了便于信号识别和处理，可以使用对称的兰姆模式作为衬底的激发模式。

公开(公告)号：US20220139743A1

公开(公告)日：2022-05-05

申请号：US17088885

申请日：2020-11-04

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Yan CHEN ,  Ching-Ling MENG ,  Xinkang TIAN

IPC: H01L21/67 ,  G01N21/55 ,  G01N21/95 ,  G01N23/2251

Abstract: An apparatus for detecting defects on a sample is provided. The apparatus includes a stage for receiving a sample to be inspected, and a first light source configured to generate an incident light beam to illuminate the sample on the stage. The first light source is configured to sequentially emit light of different wavelengths in wavelength sweeps. The apparatus also includes imaging optics for collecting light scattered from the sample and for forming a detection light beam, a detector for receiving the detection light beam and acquiring images of the sample, collection optics disposed within the detection light beam and configured to direct the detection light beam to the detector, and a first light modulator. The first light modulator is configured to filter out signals from the detection light beam, where the signals originate from uniform periodicity of uniformly repeating structures on the sample.

公开(公告)号：US20150124250A1

公开(公告)日：2015-05-07

申请号：US14530164

申请日：2014-10-31

Applicant: TOKYO ELECTRON LIMITED

Inventor： Junwei BAO ,  Ching-Ling MENG ,  Holger TUITJE ,  Mihail MIHAYLOV ,  Yan CHEN ,  Zheng YAN ,  Haixing ZOU ,  Hanyou CHU

IPC: G01J3/443 ,  G01N21/31

CPC classification number: G01J3/443 ,  G01N21/31 ,  G01N21/68 ,  G01N2201/10

Abstract: Disclosed is a method, computer method, system, and apparatus for measuring two-dimensional distributions of optical emissions from a plasma in a semiconductor plasma processing chamber. The acquired two-dimensional distributions of plasma optical emissions can be used to infer the two-dimensional distributions of concentrations of certain chemical species of interest that are present in the plasma, and thus provide a useful tool for process development and also for new and improved processing tool development. The disclosed technique is computationally simple and inexpensive, and involves the use of an expansion of the assumed optical intensity distribution into a sum of basis functions that allow for circumferential variation of optical intensity. An example of suitable basis functions are Zernike polynomials.

Abstract translation: 公开了一种用于测量半导体等离子体处理室中的等离子体的光发射的二维分布的方法，计算机方法，系统和装置。 所获得的等离子体光学发射的二维分布可以用于推断存在于等离子体中的某些化学物质的浓度的二维分布，并且因此为工艺开发提供了有用的工具，并为新的和改进的 加工工具开发。 所公开的技术在计算上是简单和便宜的，并且涉及将假设的光强度分布的扩展用于允许光强度的周向变化的基函数的总和。 合适的基函数的例子是泽尔尼克多项式。