公开(公告)号：US20220406602A1

公开(公告)日：2022-12-22

申请号：US17772163

申请日：2020-09-11

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA

IPC: H01L21/268 ,  H01L21/304 ,  B23K26/53 ,  B24B7/22

Abstract: A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.

公开(公告)号：US20220359212A1

公开(公告)日：2022-11-10

申请号：US17287558

申请日：2019-09-03

Applicant: Tokyo Electron Limited

Inventor： Hirotoshi MORI ,  Yoshihiro KAWAGUCHI ,  Kazuya HISANO ,  Hayato TANOUE

IPC: H01L21/304 ,  H01L21/67 ,  H01L21/68 ,  H01L21/687 ,  B23K26/53 ,  H01L21/306

Abstract: A substrate processing apparatus includes a holder configured to hold a combined substrate in which a first substrate and a second substrate are bonded to each other; a first detector configured to detect an outer end portion of the first substrate; a second detector configured to detect a boundary between a bonding region where the first substrate and a second substrate are bonded and a non-bonding region located at an outside of the bonding region; a periphery removing device configured to remove a peripheral portion of the first substrate as a removing target from the combined substrate held by the holder.

公开(公告)号：US20220254638A1

公开(公告)日：2022-08-11

申请号：US17627706

申请日：2020-07-09

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA

IPC: H01L21/268 ,  B23K26/53

Abstract: A processing apparatus configured to process a processing target object includes a modifying device configured to radiate laser light to an inside of the processing target object to form multiple modification layers along a plane direction of the processing target object; and a controller configured to control an operation of the modifying device at least. The controller controls the modifying device to form: a peripheral modification layer which serves as a starting point where a peripheral portion of the processing target object as a removing target is detached; a first internal modification layer in a ring shape to be concentric with the peripheral modification layer at a diametrically inner side than the peripheral modification layer; and a second internal modification layer in a spiral shape at a diametrically inner side than the first internal modification layer.

公开(公告)号：US20210391177A1

公开(公告)日：2021-12-16

申请号：US17295480

申请日：2019-11-11

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro KAWAGUCHI ,  Seiji NAKANO ,  Munehisa KODAMA ,  Hirotoshi MORI ,  Hayato TANOUE ,  Yohei YAMAWAKI

IPC: H01L21/304 ,  H01L21/683 ,  B24B7/22

Abstract: A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; a periphery removing unit configured to remove, starting from a periphery modification layer formed on the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate, the peripheral portion from the combined substrate held by the substrate holder; and a collection unit equipped with a collection mechanism configured to collect the peripheral portion removed by the periphery removing unit.

公开(公告)号：US20210039203A1

公开(公告)日：2021-02-11

申请号：US16978211

申请日：2019-03-01

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE

IPC: B23K26/36 ,  H01L21/304 ,  H01L21/02 ,  H01L21/268

Abstract: A substrate processing system configured to process a substrate includes a modification layer forming apparatus configured to form a modification layer within the substrate along a boundary between a peripheral portion of the substrate to be removed and a central portion of the substrate; and a periphery removing apparatus configured to remove the peripheral portion starting from the modification layer.

公开(公告)号：US20250095995A1

公开(公告)日：2025-03-20

申请号：US18961960

申请日：2024-11-27

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA

IPC: H01L21/268 ,  B23K26/53 ,  B23K103/00 ,  B24B7/22 ,  H01L21/304

Abstract: A substrate processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removing target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate in the peripheral portion is reduced; and removing the peripheral portion starting from the peripheral modification layer. A first crack is developed from the peripheral modification layer toward the second substrate. The peripheral modification layer is formed such that a lower end of the first crack is located above the non-bonding region and an inner end of the non-bonding region is located at a diametrically outer side than the first crack.

公开(公告)号：US20240312804A1

公开(公告)日：2024-09-19

申请号：US18261507

申请日：2022-01-04

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Kento ARAKI ,  Yohei YAMASHITA ,  Gousuke SHIRAISHI

IPC: H01L21/67 ,  H01L21/268 ,  H01L21/762

CPC classification number: H01L21/67092 ,  H01L21/268 ,  H01L21/76254

Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate and a second substrate are bonded to each other includes a substrate holder configured to hold the combined substrate; a laser radiating unit configured to radiate laser light in a pulse shape to a laser absorbing layer formed between the first substrate and the second substrate; a moving mechanism configured to move the substrate holder and the laser radiating unit relative to each other; and a controller configured to control the laser radiating unit and the moving mechanism. The controller sets an interval of the laser light radiated to the laser absorbing layer based on a thickness of the laser absorbing layer.

公开(公告)号：US20240153822A1

公开(公告)日：2024-05-09

申请号：US18549610

申请日：2022-02-25

Applicant: Tokyo Electron Limited

Inventor： Yohei YAMASHITA ,  Yasutaka MIZOMOTO ,  Hayato TANOUE

IPC: H01L21/78 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/78 ,  H01L21/67092 ,  H01L21/6836

Abstract: A semiconductor chip manufacturing method includes (A) to (E) described below. (A) preparing a stacked substrate including a first semiconductor substrate, a device layer, a separation layer, and a third semiconductor substrate in this order. (B) dicing the first semiconductor substrate, the device layer, and the separation layer. (C) attaching the diced stacked substrate to a tape from an opposite side to the third semiconductor substrate, and mounting the diced stacked substrate to a frame with the tape therebetween. (D) radiating, after mounting the stacked substrate to the frame, a laser beam penetrating the third semiconductor substrate to the separation layer to form a modification layer at an interface between the third semiconductor substrate and the separation layer, or at an inside of the separation layer. (E) separating the third semiconductor substrate and the separation layer starting from the modification layer.

公开(公告)号：US20240071765A1

公开(公告)日：2024-02-29

申请号：US18261518

申请日：2022-01-05

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Kento ARAKI ,  Yohei YAMASHITA ,  Gousuke SHIRAISHI

IPC: H01L21/268

CPC classification number: H01L21/268

Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate, an interface layer including at least a laser absorbing film, and a second substrate are stacked on top of each other includes a substrate holder configured to hold the combined substrate; an interface laser radiating unit configured to radiate laser light to the laser absorbing film in a pulse shape; a moving mechanism configured to move the substrate holder and the interface laser radiating unit relative to each other; and a controller. The controller performs a control of acquiring information of the interface layer formed in the combined substrate, and a control of setting, based on the acquired information of the interface layer, a bonding interface having a weakest adhesive strength among bonding interfaces in the interface layer as a separation interface between the first substrate and the second substrate.

公开(公告)号：US20220250191A1

公开(公告)日：2022-08-11

申请号：US17627707

申请日：2020-07-09

Applicant: Tokyo Electron Limited

Inventor： Hayato TANOUE ,  Yohei YAMASHITA ,  Hirotoshi MORI

IPC: B23K26/53 ,  B23K26/062 ,  H01L21/304 ,  H01L21/67

Abstract: A processing apparatus includes a controller configured to control an operation of forming condensing points in a processing target object. In forming the condensing points by radiating a laser light to an inside of the processing target object periodically from a modifying device while rotating the processing target object held by a holder relative to the modifying device by a rotating mechanism and, also, by moving the modifying device in a diametrical direction relative to the holder by a moving mechanism, the controller controls a number and an arrangement of the condensing points, which are simultaneously formed at different positions in a plane direction of the processing target object, based on a relative rotation number of the processing target object and a radiation pitch of the laser light.