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公开(公告)号：US20170031245A1
公开(公告)日：2017-02-02
申请号：US15106915
申请日：2014-12-15
Applicant: Tokyo Electron Limited , Osaka University
Inventor： Seiji NAGAHARA , Gousuke SHIRAISHI , Satoru SHIMURA , Kousuke YOSHIHARA , Shinichiro KAWAKAMI , Masaru TOMONO , Seiichi TAGAWA , Akihiro OSHIMA
CPC classification number: G03F7/2004 , G03F7/20 , H01L21/67098 , H01L21/67115 , H01L21/67196 , H01L21/67225
Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.
Abstract translation: 一种用于处理基板的基板处理系统，包括：设置有多个处理基板的处理装置的处理台; 接口站，其在设置在基板处理系统之外的曝光装置之间直接或间接地传送基板，并且在基板上的抗蚀剂膜上进行图案的曝光;以及基板处理系统; 执行曝光图案之后，使用UV光对基板上的抗蚀剂膜进行后曝光的光照射装置; 以及容纳光照射装置并且可以减压或惰性气体气氛调节的后曝光站，其中后曝光站通过可调节到减压的空间直接或间接连接到曝光装置，或 惰性气体气氛。
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公开(公告)号：US20240082957A1
公开(公告)日：2024-03-14
申请号：US18261520
申请日：2022-01-05
Applicant: Tokyo Electron Limited
Inventor： Hayato TANOUE , Kento ARAKI , Yohei YAMASHITA , Gousuke SHIRAISHI
IPC: B23K26/361 , B23K26/08 , B23K26/18 , B23K26/402 , H01L21/268
CPC classification number: B23K26/361 , B23K26/0823 , B23K26/083 , B23K26/18 , B23K26/402 , H01L21/268 , B23K2103/56
Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate and a second substrate are stacked on top of each other includes a substrate holder configured to hold the combined substrate; a laser radiating unit configured to radiate laser light to a laser absorbing film in a pulse shape; a moving mechanism configured to move the substrate holder and the laser radiating unit relative to each other; and a controller configured to control the laser radiating unit and the moving mechanism. The controller performs, based on a thickness of the laser absorbing film, a control of selecting a position of a separation surface between the first substrate and the second substrate from one of a position between the first substrate and the laser absorbing film or a position between the a separation facilitating film and the second substrate.
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公开(公告)号：US20180143540A1
公开(公告)日：2018-05-24
申请号：US15815925
申请日：2017-11-17
Applicant: Tokyo Electron Limited
Inventor： Seiji NAGAHARA , Masaru TOMONO , Nobutaka FUKUNAGA , Gousuke SHIRAISHI , Yukie MINEKAWA
IPC: G03F7/20 , H01L21/67 , H01L21/677
CPC classification number: G03F7/70725 , G03F7/2022 , G03F7/70558 , G03F7/70775 , H01L21/67178 , H01L21/67225 , H01L21/67718
Abstract: An exposure apparatus includes: a stage on which a substrate is placed; a plurality of light irradiation units configured to emit light independently of each other to different positions in a right and left direction on a surface of the substrate, so as to form a strip-like irradiation area extending from one end of the surface of the substrate to the other end of the substrate; a rotation mechanism configured to rotate the substrate placed on the stage relative to the irradiation area; a stage moving mechanism configured to move the stage relative to the irradiation area in a back and forth direction; and a control unit configured to output control signals that make said exposure apparatus perform a first step that rotates the substrate relative to the irradiation area having a first illuminance distribution such that the whole surface of the substrate is exposed, and a second step that moves the substrate in the back and forth direction relative to the irradiation area having a second illuminance distribution while rotation of the substrate is being stopped, such that the whole surface of the substrate is exposed.
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公开(公告)号：US20240404852A1
公开(公告)日：2024-12-05
申请号：US18697028
申请日：2022-09-16
Applicant: Tokyo Electron Limited
Inventor： Yohei YAMASHITA , Hayato TANOUE , Gousuke SHIRAISHI
Abstract: A processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes forming a peripheral modification layer along a boundary between a peripheral portion of the first substrate as a removal target and a central portion of the first substrate; forming a non-bonding region in which bonding strength between the first substrate and the second substrate at the peripheral portion is reduced; forming a reference modification layer, which serves as a determination reference of a formation position of either the peripheral modification layer or the non-bonding region, at a non-bonding surface of the first substrate not bonded to the second substrate; and removing the peripheral portion starting from the peripheral modification layer.
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Patent Agency Ranking
5.发明申请公开(公告)号：US20160327869A1
公开(公告)日：2016-11-10
申请号：US15109917
申请日：2015-01-13
Applicant: TOKYO ELECTRON LIMITED
Inventor： Seiji NAGAHARA , Gousuke SHIRAISHI , Satoru SHIMURA , Kousuke YOSHIHARA , Shinichiro KAWAKAMI , Masaru TOMONO , Yuichi TERASHITA , Hironori MIZOGUCHI
IPC: G03F7/20
CPC classification number: G03F7/7055 , G03F7/2022 , G03F7/70558
Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.
Abstract translation: 在晶片上形成抗蚀剂图案的技术可以实现图案线宽度的高分辨率和高平面均匀性。 在晶片W上形成抗蚀剂膜，然后通过图案曝光装置进行图案曝光，通过使用淹光曝光装置曝光整个图案曝光区域。 在曝光期间，根据先前从检查装置获得的抗蚀剂图案的线宽的面内分布的信息，根据晶片上的曝光位置来调节曝光量。 用于调节曝光量的方法包括在移动对应于晶片直径的条形照射区域的同时调节曝光量的方法，涉及间歇地移动照射区域的方法，对应于先前图案曝光中的照射区域 ，调整每个芯片的曝光量。
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公开(公告)号：US20240416450A1
公开(公告)日：2024-12-19
申请号：US18706115
申请日：2022-10-19
Applicant: Tokyo Electron Limited
Inventor： Kazuya HISANO , Yoshihiro KAWAGUCHI , Gousuke SHIRAISHI
Abstract: A processing method of processing a combined substrate in which a first substrate and a second substrate are bonded to each other includes: forming, by radiating interface laser light to an interface between the first substrate and the second substrate, a non-bonding region with reduced bonding strength at the interface; inspecting a forming state of the non-bonding region; forming a peripheral modification layer along a boundary between a peripheral portion and a central portion of the first substrate; and removing the peripheral portion starting from the peripheral modification layer. The inspecting of the forming state of the non-bonding region includes: imaging the non-bonding region with a camera; acquiring, from an obtained image of the non-bonding region, a distribution of gray values in a plan view of the non-bonding region; and inspecting the forming state of the non-bonding region by comparing the acquired gray values with a preset threshold value.
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7.发明公开公开(公告)号：US20240312804A1
公开(公告)日：2024-09-19
申请号：US18261507
申请日：2022-01-04
Applicant: Tokyo Electron Limited
Inventor： Hayato TANOUE , Kento ARAKI , Yohei YAMASHITA , Gousuke SHIRAISHI
IPC: H01L21/67 , H01L21/268 , H01L21/762
CPC classification number: H01L21/67092 , H01L21/268 , H01L21/76254
Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate and a second substrate are bonded to each other includes a substrate holder configured to hold the combined substrate; a laser radiating unit configured to radiate laser light in a pulse shape to a laser absorbing layer formed between the first substrate and the second substrate; a moving mechanism configured to move the substrate holder and the laser radiating unit relative to each other; and a controller configured to control the laser radiating unit and the moving mechanism. The controller sets an interval of the laser light radiated to the laser absorbing layer based on a thickness of the laser absorbing layer.
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公开(公告)号：US20240071765A1
公开(公告)日：2024-02-29
申请号：US18261518
申请日：2022-01-05
Applicant: Tokyo Electron Limited
Inventor： Hayato TANOUE , Kento ARAKI , Yohei YAMASHITA , Gousuke SHIRAISHI
IPC: H01L21/268
CPC classification number: H01L21/268
Abstract: A substrate processing apparatus configured to process a combined substrate in which a first substrate, an interface layer including at least a laser absorbing film, and a second substrate are stacked on top of each other includes a substrate holder configured to hold the combined substrate; an interface laser radiating unit configured to radiate laser light to the laser absorbing film in a pulse shape; a moving mechanism configured to move the substrate holder and the interface laser radiating unit relative to each other; and a controller. The controller performs a control of acquiring information of the interface layer formed in the combined substrate, and a control of setting, based on the acquired information of the interface layer, a bonding interface having a weakest adhesive strength among bonding interfaces in the interface layer as a separation interface between the first substrate and the second substrate.
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9.发明申请RESIST PATTERN FORMING METHOD, COATING AND DEVELOPING APPARATUS AND STORAGE MEDIUM 审中-公开电阻图案形成方法，涂装和开发设备和存储介质公开(公告)号：US20160085154A1
公开(公告)日：2016-03-24
申请号：US14889564
申请日：2014-05-08
Applicant: TOKYO ELECTRON LIMITED
Inventor： Tetsuo FUKUOKA , Yoshio KIMURA , Gousuke SHIRAISHI
IPC: G03F7/16
Abstract: This resist pattern forming method comprises: a step for coating a substrate with a chemically amplified resist; a subsequent step for forming a latent image of a pattern by exposing the resist film on the substrate; a subsequent step for irradiating the exposed resist film selectively with infrared light from a first heating source having wavelengths 2.0-6.0 μm; a subsequent step for heating the substrate by means of a second heating source that is different from the first heating source for the purpose of diffusing an acid that is produced in the resist film by exposure; and a subsequent step for forming a pattern of the resist film by supplying a developer liquid to the substrate. Consequently, roughening of sidewalls of the resist pattern can be suppressed.
Abstract translation: 该抗蚀剂图形形成方法包括：用化学放大型抗蚀剂涂布基板的步骤; 通过将抗蚀剂膜暴露在基板上来形成图案的潜像的后续步骤; 选择性地用来自波长为2.0-6.0μm的第一加热源的红外光照射曝光的抗蚀剂膜的后续步骤; 用于通过不同于第一加热源的第二加热源对衬底进行加热的步骤，用于通过曝光扩散在抗蚀剂膜中产生的酸; 以及随后的步骤，用于通过将显影剂液体供应到基底来形成抗蚀剂膜的图案。 因此，可以抑制抗蚀剂图案的侧壁的粗糙化。
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