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公开(公告)号：US20230062105A1
公开(公告)日：2023-03-02
申请号：US17820962
申请日：2022-08-19
发明人： Makoto WADA , Yutaka FUJINO , Hiroyuki IKUTA , Hideki YUASA , Hirokazu UEDA
IPC分类号： C23C16/44 , C23C16/511 , C23C16/34 , H01J37/32
摘要： A film forming method includes repeatedly performing: forming a film on one substrate or consecutively on a plurality of substrates by supplying a film formation gas into a processing container while heating the substrate on a stage; cleaning an interior of the processing container by a fluorine-containing gas by setting a temperature of the stage to a first temperature at which a vapor pressure of an aluminum fluoride becomes lower than a control pressure in the processing container in a state in which the substrate is unloaded from the processing container; and performing a precoating continuously to the cleaning the interior of the processing container such that a precoat film is formed on at least a surface of the stage by setting the temperature of the stage to a second temperature at which the vapor pressure of the aluminum fluoride becomes lower than the control pressure in the processing container.
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公开(公告)号：US20220235462A1
公开(公告)日：2022-07-28
申请号：US17577656
申请日：2022-01-18
发明人： Hirokazu UEDA , Hideki YUASA , Yutaka FUJINO , Yoshiyuki KONDO , Hiroyuki IKUTA
IPC分类号： C23C16/455 , H01L21/02 , H01J37/32 , C23C16/34 , C23C16/36 , C23C16/511
摘要： A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.
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公开(公告)号：US20220037124A1
公开(公告)日：2022-02-03
申请号：US17388613
申请日：2021-07-29
发明人： Satoshi ITOH , Hiroyuki IKUTA , Yoshiyuki KONDO , Hideki YUASA , Soudai EMORI
IPC分类号： H01J37/32 , H01L21/02 , C23C16/511 , C23C16/509
摘要： A plasma processing apparatus for generating plasma from a processing gas using microwaves and performing plasma processing on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed; a plurality of microwave radiation units arranged at a central portion and an outer peripheral portion of a ceiling wall of the processing chamber and configured to radiate microwaves; and a controller configured to complete microwave radiation from the microwave radiation unit in the central portion upon completion of plasma processing of the substrate and then complete microwave radiation from the microwave radiation units in the outer peripheral portion.
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公开(公告)号：US20230061151A1
公开(公告)日：2023-03-02
申请号：US17820929
申请日：2022-08-19
发明人： Hideki YUASA , Hiroyuki IKUTA , Yutaka FUJINO , Makoto WADA , Hirokazu UEDA
摘要： A film forming method of forming a film on a substrate by using a film forming apparatus including a processing container, and a stage provided in an interior of the processing container to place the substrate thereon and in which aluminum is contained, includes: forming a film continuously on one substrate or on a plurality of substrates by supplying a gas for film formation to the interior of the processing container while heating the substrate placed on the stage; cleaning the interior of the processing container with a fluorine-containing gas in a state in which the substrate is unloaded from the processing container; and performing a post-process by generating plasma of an oxygen- and hydrogen-containing-gas in the interior of the processing container, wherein the forming the film, the cleaning the interior of the processing container, and the performing the post-process are repeatedly performed.
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