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公开(公告)号：US20230042099A1
公开(公告)日：2023-02-09
申请号：US17757906
申请日：2020-11-26
发明人： Makoto WADA , Takashi MATSUMOTO , Nobutake KABUKI , Ryota IFUKU , Masahito SUGIURA , Hirokazu UEDA
IPC分类号： C23C16/44 , H01J37/32 , H01L21/768 , H01L21/285 , C23C16/26 , C23C16/511 , C01B32/186
摘要： A film forming method of forming a carbon film includes: cleaning an interior of a processing container by using oxygen-containing plasma in a state in which no substrate is present inside the processing container; subsequently, extracting and removing oxygen inside the processing container by using plasma in the state in which no substrate is present inside the processing container; and subsequently, loading a substrate into the processing container and forming the carbon film on the substrate through plasma CVD using a processing gas including a carbon-containing gas, wherein the cleaning, the extracting and removing the oxygen, and the forming the carbon film are repeatedly performed.
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公开(公告)号：US20220316065A1
公开(公告)日：2022-10-06
申请号：US17636808
申请日：2020-08-07
发明人： Makoto WADA , Takashi MATSUMOTO , Masahito SUGIURA , Ryota IFUKU , Hirokazu UEDA
IPC分类号： C23C16/511 , H01J37/32 , C23C16/27 , C23C16/455
摘要： There is provided a processing apparatus for forming a film with a plasma. The processing apparatus comprises: a processing container, having a ceramic sprayed coating on an inner wall on which an antenna that radiates microwaves is arranged, configured to accommodate a substrate; a mounting table configured to mount the substrate in the processing container; and a controller configured to perform a precoating process of coating a surface of the ceramic sprayed coating with a first carbon film with a plasma of a first carbon-containing gas at a first pressure and a film forming process of forming a second carbon film on the substrate with a plasma of a second carbon-containing gas at a second pressure.
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公开(公告)号：US20230080956A1
公开(公告)日：2023-03-16
申请号：US17931930
申请日：2022-09-14
发明人： Makoto WADA , Takashi MATSUMOTO , Ryota IFUKU , Hiroki YAMADA , Haruhiko FURUYA
IPC分类号： H01L21/3205 , H01L21/3213 , H01L21/02 , H01L21/67 , H01L21/677
摘要： A substrate processing method includes: a carry-in step of carrying a substrate having a silicon-containing film on a surface of the substrate into a processing container; a first step of forming an adsorption layer by supplying an oxygen-containing gas into the processing container and causing the oxygen-containing gas to be adsorbed on a surface of the silicon-containing film; a second step of forming a silicon oxide layer by supplying an argon-containing gas into the processing container and causing the adsorption layer and the surface of the silicon-containing film to react with each other with plasma of the argon-containing gas; and a third step of forming a graphene film on the silicon oxide layer by supplying a carbon-containing gas into the processing container with plasma of the carbon-containing gas.
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公开(公告)号：US20230061151A1
公开(公告)日：2023-03-02
申请号：US17820929
申请日：2022-08-19
发明人： Hideki YUASA , Hiroyuki IKUTA , Yutaka FUJINO , Makoto WADA , Hirokazu UEDA
摘要： A film forming method of forming a film on a substrate by using a film forming apparatus including a processing container, and a stage provided in an interior of the processing container to place the substrate thereon and in which aluminum is contained, includes: forming a film continuously on one substrate or on a plurality of substrates by supplying a gas for film formation to the interior of the processing container while heating the substrate placed on the stage; cleaning the interior of the processing container with a fluorine-containing gas in a state in which the substrate is unloaded from the processing container; and performing a post-process by generating plasma of an oxygen- and hydrogen-containing-gas in the interior of the processing container, wherein the forming the film, the cleaning the interior of the processing container, and the performing the post-process are repeatedly performed.
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公开(公告)号：US20210164103A1
公开(公告)日：2021-06-03
申请号：US17106521
申请日：2020-11-30
发明人： Ryota IFUKU , Takashi MATSUMOTO , Masahito SUGIURA , Makoto WADA
IPC分类号： C23C16/511 , H01L21/02 , H01J37/32 , C23C16/26 , C23C16/44
摘要： There is provided a film forming method of forming a carbon-containing film by a microwave plasma from a microwave source, the film forming method including: a dummy step of performing a dummy process by generating plasma of a first carbon-containing gas within a processing container; a placement step of placing a substrate on a stage within the processing container; and a film forming step of forming the carbon-containing film on the substrate using plasma of a second carbon-containing gas.
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公开(公告)号：US20230102051A1
公开(公告)日：2023-03-30
申请号：US17935594
申请日：2022-09-27
发明人： Ryota IFUKU , Makoto WADA , Nobutake KABUKI , Takashi MATSUMOTO , Hiroshi TERADA , Genji NAKAMURA
IPC分类号： C23C16/26 , C23C16/02 , C23C16/44 , C23C16/513
摘要： A film forming method includes: a loading process of loading a substrate into a processing container; a first process of forming an interface layer having an amorphous structure or a microcrystalline structure on the substrate by plasma of a first mixed gas including a carbon-containing gas; and a second process of forming a graphene film on the interface layer by plasma of a second mixed gas including the carbon-containing gas.
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公开(公告)号：US20230062105A1
公开(公告)日：2023-03-02
申请号：US17820962
申请日：2022-08-19
发明人： Makoto WADA , Yutaka FUJINO , Hiroyuki IKUTA , Hideki YUASA , Hirokazu UEDA
IPC分类号： C23C16/44 , C23C16/511 , C23C16/34 , H01J37/32
摘要： A film forming method includes repeatedly performing: forming a film on one substrate or consecutively on a plurality of substrates by supplying a film formation gas into a processing container while heating the substrate on a stage; cleaning an interior of the processing container by a fluorine-containing gas by setting a temperature of the stage to a first temperature at which a vapor pressure of an aluminum fluoride becomes lower than a control pressure in the processing container in a state in which the substrate is unloaded from the processing container; and performing a precoating continuously to the cleaning the interior of the processing container such that a precoat film is formed on at least a surface of the stage by setting the temperature of the stage to a second temperature at which the vapor pressure of the aluminum fluoride becomes lower than the control pressure in the processing container.
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公开(公告)号：US20200303251A1
公开(公告)日：2020-09-24
申请号：US16822210
申请日：2020-03-18
发明人： Makoto WADA , Takashi MATSUMOTO , Masahito SUGIURA , Ryota IFUKU
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
摘要： There is provided a semiconductor device including a first conductive layer formed on a substrate; a second conductive layer serving as a wiring layer and a barrier layer provided between the first conductive layer and the second conductive layer, wherein the barrier layer is made of a graphene film, and the second conductive layer includes a metal silicide compound, the metal silicide compound being provided so as to be in contact with the graphene film constituting the barrier layer.
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