公开(公告)号：US20220235462A1

公开(公告)日：2022-07-28

申请号：US17577656

申请日：2022-01-18

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Hideki YUASA ,  Yutaka FUJINO ,  Yoshiyuki KONDO ,  Hiroyuki IKUTA

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/511

Abstract: A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.

公开(公告)号：US20170170010A1

公开(公告)日：2017-06-15

申请号：US15380955

申请日：2016-12-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Junya MIYAHARA ,  Yutaka FUJINO ,  Genji NAKAMURA ,  Kentaro SHIRAGA

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/511 ,  C23C16/40 ,  H01L21/687 ,  C23C16/455

CPC classification number: H01L21/02236 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4554 ,  C23C16/56 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32238 ,  H01J37/32247 ,  H01J37/32256 ,  H01J37/32311 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32834 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02252 ,  H01L21/02304 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/28255 ,  H01L21/687

Abstract: A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20° C. to 145° C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/m2 to 3.5 kW/m2 with respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.

公开(公告)号：US20200035491A1

公开(公告)日：2020-01-30

申请号：US16510519

申请日：2019-07-12

Applicant: Tokyo Electron Limited

Inventor： Yutaka FUJINO

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01J37/32 ,  C23C16/511 ,  C23C16/34 ,  C23C16/46 ,  C23C16/458

Abstract: A hard mask film forming method includes preparing a substrate in which an etching target film is formed on a base. The hard mask film forming method further includes forming a hard mask film on the substrate while controlling film forming parameters such that tensile stress is set as initial film stress and the tensile stress monotonously increases from a bottom surface of the hard mask film toward an upper surface of the hard mask film.

公开(公告)号：US20170110349A1

公开(公告)日：2017-04-20

申请号：US15128804

申请日：2015-02-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yutaka FUJINO

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/683 ,  H01L21/52 ,  H01L21/677

CPC classification number: H01L21/67144 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/54 ,  H01L21/52 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/6773 ,  H01L21/67742 ,  H01L21/6838 ,  H01L21/68764

Abstract: A substrate processing system for performing a process with respect to a plurality of substrates includes an annular process chamber configured to accommodate the plurality of substrates and to perform a predetermined process on the plurality of substrates, a cassette mounting part configured to mount a cassette which accommodates the plurality of substrates, and a substrate transfer mechanism configured to transfer the plurality of substrates between the annular process chamber and the cassette mounting part. The plurality of substrates is concentrically disposed within the annular process chamber in a plane view.

公开(公告)号：US20230220545A1

公开(公告)日：2023-07-13

申请号：US17916159

申请日：2021-03-29

Applicant: Tokyo Electron Limited

Inventor： Yoshiyuki KONDO ,  Yutaka FUJINO ,  Hiroyuki IKUTA ,  Hideki YUASA

IPC: C23C16/44 ,  H01L21/3065 ,  H01J37/32

CPC classification number: C23C16/4405 ,  H01L21/3065 ,  H01J37/32862 ,  H01J37/3244

Abstract: The cleaning method according to an embodiment of the present invention is for cleaning a plasma processing apparatus that performs a plasma processing on a substrate. This cleaning method includes: forming a protective film; and cleaning. The forming the protective film involves forming the protective film in a plasma generation region by generating plasma while supplying a film-forming gas into a processing container in which a processing space including the plasma generation region and a diffusion region is formed. The cleaning involves cleaning an interior of the processing container in which the protective film has been formed by generating plasma while supplying a cleaning gas into the processing container.

公开(公告)号：US20230062105A1

公开(公告)日：2023-03-02

申请号：US17820962

申请日：2022-08-19

Applicant: Tokyo Electron Limited

Inventor： Makoto WADA ,  Yutaka FUJINO ,  Hiroyuki IKUTA ,  Hideki YUASA ,  Hirokazu UEDA

IPC: C23C16/44 ,  C23C16/511 ,  C23C16/34 ,  H01J37/32

Abstract: A film forming method includes repeatedly performing: forming a film on one substrate or consecutively on a plurality of substrates by supplying a film formation gas into a processing container while heating the substrate on a stage; cleaning an interior of the processing container by a fluorine-containing gas by setting a temperature of the stage to a first temperature at which a vapor pressure of an aluminum fluoride becomes lower than a control pressure in the processing container in a state in which the substrate is unloaded from the processing container; and performing a precoating continuously to the cleaning the interior of the processing container such that a precoat film is formed on at least a surface of the stage by setting the temperature of the stage to a second temperature at which the vapor pressure of the aluminum fluoride becomes lower than the control pressure in the processing container.

公开(公告)号：US20160222516A1

公开(公告)日：2016-08-04

申请号：US14917414

申请日：2014-09-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Shigeru KASAI ,  Emiko HARA ,  Yutaka FUJINO ,  Yuki OSADA ,  Jun NAKAGOMI ,  Tomohito KOMATSU

IPC: C23C16/511 ,  C23C16/455 ,  H01J37/32

Abstract: A plasma processing device processes a substrate by generating plasma using a surface wave formed on a surface of a shower plate by a supplied microwave, which includes a plasma generating antenna equipped with the shower plate for supplying first and second gases into a processing vessel, and a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. The first gas supply holes are disposed inward of the outer surface of the drooping member. The second gas supply holes are disposed outward of the outer surface of the drooping member.

Abstract translation: 等离子体处理装置通过利用供给的微波在表面波形成的喷淋板的表面波上产生等离子体来进行处理，该等离子体处理装置包括配备有用于将第一和第二气体供给到处理容器中的喷淋板的等离子体发生天线， 安装成从淋浴板的下端面向下方突出的下垂部件。 下垂构件的外表面从顶端到底端向外扩散。 淋浴板包括第一和第二气体供应孔，第一和第二气体分别通过第一和第二气体供应孔被供应到处理容器中。 第一气体供给孔设置在下垂构件的外表面的内侧。 第二气体供给孔设置在下垂构件的外表面的外侧。

公开(公告)号：US20150170881A1

公开(公告)日：2015-06-18

申请号：US14566117

申请日：2014-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomohito KOMATSU ,  Taro IKEDA ,  Yutaka FUJINO

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/511

CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3222 ,  H01J37/32238

Abstract: A microwave plasma source radiating a microwave in a chamber of a plasma processing apparatus to generate surface wave plasma includes a microwave output unit configured to generate and output a microwave, a microwave supply unit configured to transmit the microwave output from the microwave output unit, and a microwave radiation member configured as a ceiling wall of the chamber and configured to radiate the microwave supplied from the microwave supply unit into the chamber. The microwave supply unit includes microwave introduction mechanisms provided along a circumferential direction, thereby introducing the microwave to the microwave radiation member. The microwave radiation member includes slot antennas having slots through which the microwave is radiated and a microwave transmission member. The slots are provided to form a circular shape as a whole. The microwave transmission member provided to form a circular ring shape.

Abstract translation: 一种在等离子体处理装置的腔室中辐射微波以产生表面波等离子体的微波等离子体源包括：微波输出单元，被配置为产生和输出微波;微波提供单元，被配置为从微波输出单元传输微波输出;以及 微波辐射构件，其构造为所述室的顶壁，并且被配置为将从所述微波供应单元供应的微波辐射到所述室中。 微波供给单元包括沿圆周方向设置的微波引入机构，从而将微波引入微波辐射构件。 微波辐射构件包括具有微波辐射穿过的槽的微波辐射构件的槽天线。 这些槽整体形成为圆形。 微波传输部件设置成形成圆环状。

公开(公告)号：US20180114677A1

公开(公告)日：2018-04-26

申请号：US15793856

申请日：2017-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomohito KOMATSU ,  Shigenori OZAKI ,  Yutaka FUJINO ,  Jun NAKAGOMI

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a chamber; a mounting table configured to mount thereon a target object in the chamber; a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber; a first gas introduction unit configured to introduce a first gas into the chamber from the ceiling wall; and a second gas introduction unit configured to introduce a second gas into the chamber from a predetermined height position between the ceiling wall and the mounting table. The second gas introduction unit has a plurality of nozzles extending from the ceiling wall toward the mounting table and arranged on a same circumference at a regular interval. Each of the nozzles discharges the second gas toward a nozzle adjacent thereto.

公开(公告)号：US20170221716A1

公开(公告)日：2017-08-03

申请号：US15423460

申请日：2017-02-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kentaro SHIRAGA ,  Koji AKIYAMA ,  Junya MIYAHARA ,  Yutaka FUJINO

IPC: H01L21/28 ,  H01L21/8238 ,  H01L29/51 ,  H01L21/321 ,  H01L29/49

CPC classification number: H01L21/28088 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/321 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

Abstract: In a method of controlling a threshold of a transistor, a gate insulating film is formed in a channel region of a metal-oxide-semiconductor (MOS) transistor on a main surface of a semiconductor substrate. A first electrode layer is formed on the gate insulating film and a second electrode layer containing a work function adjusting metal is formed on the first electrode layer. Thereafter, an oxidation treatment or nitridation treatment using a microwave plasma processing apparatus is performed to inactivate the work function adjusting metal, thereby executing a threshold control of the MOS transistor.